Preparation method of boron-doped porous carbon material

Abstract

The invention discloses a preparation method of a boron-doped porous carbon material. The preparation method comprises the following steps: (1) preparing a mixed solution; (2) preparing polyamide acid(PAA) / boric acid composite film; (3) preparing polyimide (PI) / boric acid composite film; and (4) preparing the boron-doped porous carbon material. The porous carbon material can be directly used forpreparing the high-performance miniature super-capacitor. The method is fast and simple and low in cost, the prepared porous carbon material is high in specific area, adjustable in aperture distribution and good in conductivity, the porous carbon material can be directly patterned and a certain amount of boron is doped, and the porous carbon material can be used for preparing the high-performanceminiature super-capacitor.

Description

technical field [0001] The invention relates to the field of supercapacitors, in particular to a method for preparing a boron-doped porous carbon material. Background technique [0002] Due to its large specific surface area and good electrical conductivity, porous carbon materials are widely used in lithium-ion batteries, lithium-sulfur batteries and supercapacitors, and the good mechanical properties of carbon materials also make them ideal for flexible energy storage and flexible Candidate materials for electronic devices. Studies have found that increasing the specific surface area of ​​porous carbon materials, adjusting the pore size distribution, and performing heteroatom doping to improve electrical conductivity and electrochemical activity can further improve the electrochemical performance of porous carbon materials. [0003] At present, there are many methods for improving electrical conductivity and electrochemical activity by heteroatom doping, mainly using high...

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Problems solved by technology

[0003] At present, there are many methods for improving electrical conductivity and electrochemical activity by heteroatom doping, mainly using high-temperature carbonization in an inert atmosphere, chemical vapor deposition, etc. These methods can obtain high specific surface area, good electrical conductivity, and adjustable doping ratio. Porous carbon materials, but these methods are difficult to directly form films and pattern them to prepare micro energy storage devices and electronic devices, so it is necessary to develop simpler carbonization and patterning technologies

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