Preparation method of boron-doped porous carbon material

A technology of porous carbon materials and boron doping, which is applied in the field of preparation of boron-doped porous carbon materials, can solve problems such as difficult direct film formation, and achieve the effects of high energy utilization efficiency, increased specific surface area, and uniform pore size distribution

Active Publication Date: 2018-09-28
MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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Problems solved by technology

[0003] At present, there are many methods for improving electrical conductivity and electrochemical activity by heteroatom doping, mainly using high-temperature carbonization in an inert atmosphere, chemical vapor deposition, etc. These methods can obtain high specific surface area, good electrical conductivity, and adjustable doping ratio. Porous carbon materials, but these methods are difficult to directly form films and pattern them to prepare micro energy storage devices and electronic devices, so it is necessary to develop simpler carbonization and patterning technologies

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  • Preparation method of boron-doped porous carbon material
  • Preparation method of boron-doped porous carbon material
  • Preparation method of boron-doped porous carbon material

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[0033] The present invention will be further described below with reference to the accompanying drawings and embodiments, and the mode of the present invention includes but not limited to the following embodiments.

[0034] In order to solve the problems in the prior art that the preparation of porous carbon materials is difficult to directly form films, porous carbon materials are difficult to pattern, and the cost of existing laser direct writing technology is high, this embodiment provides a film that can be directly formed by Laser direct writing technology realizes carbonization doping, pore size distribution control and patterning (there is no scheme to use laser direct writing technology to control the pore size distribution of porous carbon materials in the prior art) to prepare micro energy storage devices and porous materials for electronic devices. Preparation methods of carbon materials. It is a method in which a certain weight ratio of boric acid and polyamic acid...

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Abstract

The invention discloses a preparation method of a boron-doped porous carbon material. The preparation method comprises the following steps: (1) preparing a mixed solution; (2) preparing polyamide acid(PAA)/boric acid composite film; (3) preparing polyimide (PI)/boric acid composite film; and (4) preparing the boron-doped porous carbon material. The porous carbon material can be directly used forpreparing the high-performance miniature super-capacitor. The method is fast and simple and low in cost, the prepared porous carbon material is high in specific area, adjustable in aperture distribution and good in conductivity, the porous carbon material can be directly patterned and a certain amount of boron is doped, and the porous carbon material can be used for preparing the high-performanceminiature super-capacitor.

Description

technical field [0001] The invention relates to the field of supercapacitors, in particular to a method for preparing a boron-doped porous carbon material. Background technique [0002] Due to its large specific surface area and good electrical conductivity, porous carbon materials are widely used in lithium-ion batteries, lithium-sulfur batteries and supercapacitors, and the good mechanical properties of carbon materials also make them ideal for flexible energy storage and flexible Candidate materials for electronic devices. Studies have found that increasing the specific surface area of ​​porous carbon materials, adjusting the pore size distribution, and performing heteroatom doping to improve electrical conductivity and electrochemical activity can further improve the electrochemical performance of porous carbon materials. [0003] At present, there are many methods for improving electrical conductivity and electrochemical activity by heteroatom doping, mainly using high...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G11/26H01G11/32H01G11/86
CPCH01G11/26H01G11/32H01G11/86Y02E60/13
Inventor 蔡金光吕超胡存宋江锋石岩罗军洪
Owner MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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