Optically-modulated semiconductor field effect transistor and integrated circuit

Abstract

The invention discloses an optically-modulated semiconductor field effect transistor and an integrated circuit. The optically-modulated semiconductor field effect transistor includes a semiconductor layer, a source region, a drain region, a gate structure and a light-emitting structure; the source region is disposed in the semiconductor layer or on the semiconductor layer; the drain region is disposed in or on the semiconductor layer; the gate structure is formed on the semiconductor layer; the light-emitting structure is formed on the semiconductor layer and at least partially covers the source region and / or drain region; and the light-emitting structure is used for generating light for exciting electron-hole pairs in the semiconductor layer. According to the optically-modulated semiconductor field effect transistor and the integrated circuit of the present invention, the light-emitting structure is disposed on the semiconductor layer and partially covers the source or the drain, so that the light-emitting structure is closer to a channel region, and can efficiently excite the electron-hole pairs in the channel region and improve the concentration of carriers in the channel region; and the on-state current of the device is greatly improved through illumination.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a light-modulating semiconductor field-effect transistor and an integrated circuit. Background technique [0002] Gallium nitride (GaN) wide bandgap direct bandgap material has the advantages of high hardness, high thermal conductivity, high electron mobility, stable chemical properties, small dielectric constant and high temperature resistance, so GaN is used in light-emitting diodes, high It has a wide range of applications and great prospects in power electronic devices such as high frequency, high temperature, radiation resistance, and high voltage. [0003] So far, heterojunction high electron mobility transistors (HEMTs) based on GaN materials have been widely used and researched. However, normally-on HEMTs cannot meet the application requirements of low power consumption. Therefore, the research on metal oxide semiconductor field effect tra...

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Problems solved by technology

But for GaN materials, the activation of implanted ions requires a very high temperature, especially for the Mg ions of the p-type channel, the activation rate is not high, which leads to a certain limit on the conduction current of GaN-MOSFET

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