Microwave ceramic dielectric for high-frequency ceramic capacitors and preparation method thereof

Abstract

The invention discloses microwave ceramic dielectric for high-frequency ceramic capacitors and a preparation method thereof. The microwave ceramic dielectric comprises Ba6-3xNd8+2xTi18O54, wherein x=1 / 2-2 / 3, and y=1 / 5-2 / 5; component materials include BaCO3, Nd2O3 and TiO2, as well as the additive Bi2O3. The preparation method includes the steps of mixing the materials according to a formula, usingZrO2 spheres to perform ball milling in deionized water, drying at 120-130 DEG C, and screening under 40 mesh; pre-sintering at 900-1100 DEG C, and holding the temperature for 2 hours; performing secondary ball milling, drying, granulating, and pressing under 80-90 MPa to shape; sintering at 1150-1250 DEG C, holding the temperature for 4 hours, and cooling for 10 hours and longer. The microwave ceramic dielectric has excellent dielectric properties, the formula is simple, the microwave ceramic dielectric has good process stability, and particularly dielectric loss is not sensitive to pre-sintering temperature and sintering temperature. The microwave ceramic dielectric is widely applicable to the manufacture of microwave devices, such as dielectric resonators and filters, and may meet thedemands for material dielectrics in system applications, such as mobile communication, satellite communication, navigation and positioning, and radar.

Description

technical field [0001] The invention relates to a ceramic material used in electronic components and a preparation method thereof, more specifically, a microwave ceramic medium and a preparation method thereof. Background technique [0002] With the rapid development of the electronics industry, especially the urgent need for electronic integration and miniaturization, more stringent requirements are put forward for electronic materials, especially the improvement of the performance of electronic materials is needed to meet the requirements. The high frequency, high dielectric constant, low loss, and near-zero temperature coefficient of dielectric materials are a major trend in the research of electronic materials. [0003] Ba6-3xNd8+2xTi18O54 (x=0~1) is a kind of tungsten bronze structure ceramics. The dielectric material based on this ceramic compound can better meet the requirements of high dielectric constant, high quality factor, resonance frequency and low temperature...

AI Technical Summary

Problems solved by technology

But the system performance still needs to be improved. The dielectric constant εr is generally less than 100, the loss tanδ is relatively large, rarely less than 2×10-4, and the drift of the temperature coefficient αc is also very large, or excellent performance cannot be obtained at the same time. At the same time, the sintering temperature currently used is relatively high, most of which are above 1300°C, and cannot yet enter the practical stage.