Carbon nitride quantum dots-modified inverted opal g-C3N4 catalyst

A technology of inverse opal and g-c3n4, which is applied in the field of carbon nitride quantum dot modified inverse opal g-C3N4 photonic crystal catalyst, can solve the problems of serious carrier recombination and small specific surface area, so as to achieve promotion and large ratio The effect of adjustable surface area and pore structure

Inactive Publication Date: 2018-11-27
EAST CHINA UNIV OF SCI & TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0003] Graphite carbon nitride (g-C 3 N 4 ) has good chemical stability and thermal stability, and its special semiconductor properties enable it

Method used

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  • Carbon nitride quantum dots-modified inverted opal g-C3N4 catalyst

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preparation example Construction

[0034] SiO 2 Preparation of pellet template

[0035] 56.6mL of absolute ethanol (EtOH), 29.4mL of water (H 2 O) and 14mL ammonia water (NH 3 ·H 2 O) Mix evenly and mark it as liquid A; mix 8mL tetraethyl orthosilicate (TEOS) and 92mL absolute ethanol evenly and mark it as liquid B. Under magnetic stirring, solution B was added to solution A, and reacted at room temperature for 24h to obtain SiO 2 colloid. Then the emulsion was washed with water and centrifuged three times, and dried in an oven at 70°C for 8 hours. Disperse 2 g of the solid in 50 mL of deionized water, and pour it into a glass bottle evenly after 5 min. Arranged at 120°C for two days, obtained SiO with a size of 580nm 2 Ball template.

[0036] Preparation of CNQDs aqueous solution

[0037] Using urea and sodium citrate as precursors, a low-temperature solid hydrothermal method was used to prepare CNQDs aqueous solution after dialysis treatment. Grind and mix 0.081g of sodium citrate and 0.101g of urea...

Embodiment 1-5

[0045] Preparation of CNQDs / CNIO Photocatalyst

[0046] Mix 0.2g CN IO with 20mL, 16mL, 12mL, 8mL, 4mL CNQDs aqueous solution and 0mL, 4mL, 8mL, 12mL, 16mL deionized water respectively, stir for 2h, then heat the sample to 450°C in a muffle furnace for 2h , and the obtained samples were named as CNQDs / CN IO-20, CNQDs / CN IO-16, CNQDs / CN IO-12, CNQDs / CN IO-8, CNQDs / CNIO-4.

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Abstract

The invention provides a preparation method of a carbon nitride quantum dots-modified inverted opal g-C3N4 catalyst. The carbon nitride quantum dots-modified inverted opal g-C3N4 catalyst can be wellused to degrade organic wastewaters, such as phenols, under the action of visible light. Three-dimensionally and orderly arranged silica (SiO2) is used as a hard template and dihydrogen diamine (DCDA)as a precursor to synthesize inverted opal g-C3N4 (CN IO) photonic crystal structure. The CN IO is subjected to loading modification of carbon nitride quantum dots (CNQDs), and optimal loading capacity is investigated. The preparation method enables the large pore diameter of inverted opal structure to be controlled by changing the particle size of the hard template; loading capacity of CNQDs iscontrolled by changing the addition of the CNQDs solution. By applying the catalyst herein to degrade phenolic wastewaters, it is discovered that the catalyst can quickly degrade organic pollutants under the action of visible light; the catalyst herein has better catalytic activity than common carbon nitride (bulk-CN) and CN IO materials.

Description

technical field [0001] The invention relates to a carbon nitride quantum dot modified inverse opal g-C 3 N 4 A photonic crystal catalyst belongs to the field of nanometer materials and the field of photocatalytic technology. Background technique [0002] In recent years, semiconductor photocatalytic oxidation technology has become an effective new method for degrading organic pollution due to its advantages of strong oxidation ability and no secondary pollution. Semiconductors are excited by light with a certain energy to generate photogenerated electrons and holes, and eventually organic pollutants mineralized to CO 2 、H 2 O and other inorganic small molecule substances. [0003] Graphite carbon nitride (g-C 3 N 4 ) has good chemical stability and thermal stability, and its special semiconductor properties enable it to play an excellent role in the field of photocatalysis, but it has problems such as small specific surface area and serious carrier recombination. The ...

Claims

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Application Information

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IPC IPC(8): B01J27/24B01J35/02C01B3/04C02F1/30B01D53/86B01D53/62C02F101/30
CPCB01D53/8671B01D2257/504B01D2259/80B01J27/24B01J35/004B01J35/02C01B3/042C02F1/30C02F2101/30C02F2305/10Y02E60/36
Inventor 刘勇弟雷菊英俞洁张金龙王灵芝周亮孙鲁颖杨帆张飞宇蒋杰伦
Owner EAST CHINA UNIV OF SCI & TECH
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