Thermal field device to grow rare-earth sesquioxide crystal by means of temperature gradient method and temperature gradient method to grow rare-earth sesquioxide crystal

Abstract

The invention provides a thermal field device to grow rare-earth sesquioxide crystal by means of a temperature gradient method. The thermal field device includes a base, an insulation barrel, a graphite hard felt insulation layer, a first support, a second support, a crucible, an upper insulation layer, and an induction heating coil; the insulation barrel is fixed onto the base; the graphite hardfelt insulation layer is arranged in the insulation barrel; a crucible holding hole is arranged in the middle of the graphite hard felt insulation layer; the first support is passed through the base and the graphite hard felt insulation layer; the top of the first support is positioned in the crucible holding hole; the second support is arranged at the bottom of the first support; the crucible isplaced in the crucible holding hole, and the bottom of the crucible is in contact with the top of the first support; the upper insulation layer is arranged at the top of the insulation barrel; the induction heating coil is arranged around the outer wall of the insulation barrel. The thermal field device employs a medium-frequency induction heating mode; the proper insulation layers are designed form a basic thermal field environment; temperature gradient forms a gradient process with hot top and cold bottom; oriented growth of crystal is ensured.

Description

technical field [0001] The invention relates to the field of crystal growth, which is an innovative design invention for the temperature gradient method, and mainly relates to a thermal field device and a growth method for a high melting point rare earth element sesquioxide crystal growth process. Background technique [0002] Rare earth sesquioxide crystal matrix (Lu 2 o 3 、Sc 2 o 3 , Y 2 o 3 etc.) has a series of advantages: cubic crystal system, no birefringence; easy to achieve various rare earth doping, high segregation coefficient; high thermal conductivity 12.5-16.5W / mK; low phonon energy ~ 430cm -1 , low non-radiative transition, high quantum efficiency; with strong field coupling characteristics, Yb-doped ground state energy level split up to 1112cm -1 ; High impact factor, high damage threshold. It has important application prospects in high-power, microchip, ultrafast, mid-infrared and visible light band lasers. However, such crystals have a high melting p...

AI Technical Summary

Problems solved by technology

Among them, the melting points of Ir and Mo are lower than or very close to the melting point of rare earth ion sesquioxides (>2400°C), and cannot be used to grow sesquioxide crystals; tungsten metal and graphite will melt into the melt and form with rare earth ions alloy metal, causing crystal pollution; the cost of rhenium metal is as high as more than 40,000 yuan per kilogram, which seriously restricts the work of crystal growth; the cost of tantalum metal is about 4,000 yuan per kilogram, which is relatively cheap, but the cutting viscosity is high, so processing Molding costs are higher

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