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A kind of preparation method of aligned carbon nanotube

A carbon nanotube, tube furnace technology, applied in nanotechnology and other directions, can solve the problems of carbon nanotube orientation is not particularly obvious, the preparation speed is slow, the sample is entangled, etc., to achieve fast preparation speed, good orientation, and directional growth. uniform effect

Inactive Publication Date: 2016-07-06
XIAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These preparation methods still have certain defects. First, the orientation of carbon nanotubes prepared by thermal CVD and MPECVD is not particularly obvious, and the prepared samples still have obvious winding phenomenon, while the orientation of NBECVD and ECRCVD is better, but the preparation speed slower, less productive

Method used

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  • A kind of preparation method of aligned carbon nanotube
  • A kind of preparation method of aligned carbon nanotube

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The preparation method of the present embodiment comprises the following steps:

[0023] Step 1. Clean the silicon wafer with ethanol and dry it, then use a coating machine to coat the surface of the dried silicon wafer. The coating material is iron-nickel alloy powder. The temperature of the coating is 1000°C, and the pressure of the coating is 0.000001Pa. The coating time is 30min; the mass percentage of nickel in the iron-nickel alloy powder is 33.5%;

[0024] Step 2. Place the silicon wafer coated in step 1 in an oxidation furnace, and oxidize it for 30 minutes under the conditions of 300° C. and 1 Pa in an oxidizing atmosphere; the oxidizing atmosphere is a mixed gas of oxygen and nitrogen, Wherein the volume percentage of oxygen is 2%;

[0025] Step 3, place the silicon wafer after the oxidation treatment in step 2 in a tube furnace, feed nitrogen into the tube furnace and heat up the tube furnace at a rate of 5°C / min. When the furnace temperature of the tube fu...

Embodiment 2

[0028] The preparation method of the present embodiment comprises the following steps:

[0029] Step 1: Clean the silicon wafer with ethanol and dry it, then use a coating machine to coat the surface of the dried silicon wafer. The coating material is iron-nickel alloy powder. The temperature of the coating is 1050°C, and the pressure of the coating is 0.00001Pa. The coating time is 25min; the mass percentage of nickel in the iron-nickel alloy powder is 35%;

[0030] Step 2. Place the silicon wafer coated in step 1 in an oxidation furnace, and oxidize it for 35 minutes under the conditions of 320° C. and 2 Pa in an oxidizing atmosphere; the oxidizing atmosphere is a mixed gas of oxygen and nitrogen, Wherein the volume percentage of oxygen is 2%;

[0031] Step 3. Place the oxidized silicon wafer in step 2 in a tube furnace, feed nitrogen gas into the tube furnace and raise the temperature of the tube furnace at a rate of 10°C / min. When the furnace temperature of the tube furn...

Embodiment 3

[0034] The preparation method of the present embodiment comprises the following steps:

[0035]Step 1. Clean the silicon wafer with ethanol and dry it, and then use a coating machine to coat the surface of the dried silicon wafer. The coating material is iron-nickel alloy powder. The temperature of the coating is 1100°C, and the pressure of the coating is 0.0001Pa. The coating time is 20min; the mass percentage of nickel in the iron-nickel alloy powder is 39%;

[0036] Step 2. Place the silicon wafer coated in step 1 in an oxidation furnace, and oxidize it for 60 minutes under the conditions of 360° C. and 1 Pa in an oxidizing atmosphere; the oxidizing atmosphere is a mixed gas of oxygen and nitrogen, Wherein the volume percentage of oxygen is 2%;

[0037] Step 3. Place the silicon wafer after the oxidation treatment in step 2 in a tube furnace, feed nitrogen into the tube furnace and heat up the tube furnace at a rate of 8°C / min. When the furnace temperature of the tube fur...

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Abstract

The invention discloses a preparation method of an aligned carbon nanotube. The preparation method comprises the following steps of (1), cleaning a silicon wafer by using ethanol, drying, and then, coating the surface of the dried silicon wafer by using a coating machine, wherein a coating material is iron-nickel alloy powder; (2), putting the coated silicon wafer in an oxidizing furnace, and oxidizing under oxidizing atmosphere for 30-60min; and (3), putting the oxidized silicon wafer in a tubular furnace, introducing nitrogen, increasing the temperature, changing nitrogen into mixed gas of hydrogen, acetylene and hydrogen fluoride after the temperature of the furnace is increased to 600-800 DEG C, applying a pulse magnetic field at two sides of the tubular furnace under a heat-retaining condition, stopping introducing gas and heating after 10-30min, simultaneously, closing the pulse magnetic field, and taking out the silicon wafer after cooling along with the furnace so as to obtain the aligned carbon nanotube on the surface of the silicon wafer. The aligned carbon nanotube prepared by the preparation method disclosed by the invention is good in directionality, rapid in preparation speed and high in yield.

Description

technical field [0001] The invention belongs to the technical field of carbon nanotube preparation, and in particular relates to a preparation method of an aligned carbon nanotube. Background technique [0002] Carbon nanotubes are formed by curling single-layer or multi-layer graphite sheets. The diameter is generally tens of nanometers, and the length is several to tens of microns. The unique microstructure determines its good electrical properties, excellent thermal conductivity and super strength. Comprehensive mechanical properties. These excellent properties make carbon nanotubes have many potential uses. Carbon nanotubes can be applied to the reinforcement of composite materials due to their high specific strength and high aspect ratio. Good electrical conductivity makes them a good material for probes of atomic force microscopes and scanning tunneling microscopes. Good semiconductor properties make carbon nanotubes Tubes can be used to make diodes, triodes, single-...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/02B82Y40/00
Inventor 陈进
Owner XIAN UNIV OF SCI & TECH