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Rare earth sesquioxide crystal growth device and method based on temperature gradient method

A technology of sesquioxide and temperature gradient method, which is applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of high cutting viscosity, difficulty, crystal pollution, etc., to reduce impurities, prolong service life, cost reduction effect

Active Publication Date: 2021-02-02
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the melting points of Ir and Mo are lower than or very close to the melting point of rare earth ion sesquioxides (>2400°C), and cannot be used to grow sesquioxide crystals; tungsten metal and graphite will melt into the melt and form with rare earth ions alloy metal, causing crystal pollution; the cost of rhenium metal is as high as more than 40,000 yuan per kilogram, which seriously restricts the work of crystal growth; the cost of tantalum metal is about 4,000 yuan per kilogram, which is relatively cheap, but the cutting viscosity is high, so processing More difficult to form

Method used

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  • Rare earth sesquioxide crystal growth device and method based on temperature gradient method
  • Rare earth sesquioxide crystal growth device and method based on temperature gradient method
  • Rare earth sesquioxide crystal growth device and method based on temperature gradient method

Examples

Experimental program
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Effect test

Embodiment 1

[0028] Such as figure 1 As shown, a rare earth sesquioxide crystal growth device based on the temperature gradient method includes a quartz cylinder 1, an induction heating coil 2, a zirconia upper insulation layer 3, a zirconia insulation cylinder 4, a zirconia insulation layer 5, a seed Crystal protection layer 6, crucible 7 and zirconia base 10, the induction heating coil 2 is wound on the outer side wall of the quartz cylinder 1, the zirconia upper insulation layer 3 is arranged above the zirconia insulation cylinder 4, and together with it placed in the quartz cylinder 1, the crucible 7 is placed in the zirconia insulation cylinder 4, and the zirconia insulation layer 5 and the seed crystal protection layer 6 are arranged between the crucible 7 and the zirconia insulation cylinder 4, and the seed crystal protection layer The bottom of 6 is provided with zirconia base 10.

[0029]Wherein, the induction heating coil 2 has 7 to 12 coils, is made of copper, and has an induct...

Embodiment 2

[0037] Select ytterbium oxide (Yb 2 o 3 doped Sc 2 o 3 Rare earth ion sesquioxide crystal matrix, using the device and method described in Example 1, to prepare Yb:Sc with a large size of Φ36mm×41mm 2 o 3 crystals. Among them, the reducing protective gas input into the thermal field space is H 2 (1%-10%)+Ar, all the other are the same as embodiment 1.

Embodiment 3

[0039] Choose erbium oxide (Er 2 o 3 Doping Y 2 o 3 Rare earth ion sesquioxide crystal matrix, using the device and method described in Example 1, to prepare Er: Y with a large size of Φ38mm×45mm 2 o 3 crystals. Among them, the reducing protective gas input into the thermal field space is H 2 (0.5%-10%)+N 2 , all the other are with embodiment 1.

[0040] Example 3

[0041] Select iron oxide (Fe 2 o 3 doped GdScO 3 Rare earth ion sesquioxide crystal matrix, using the device and method described in Example 1, to prepare Fe:GdScO with a large size of Φ34mm×39mm 3 crystals. The reducing protective gas input into the thermal field space is CO (1%-10%)+Ar, and the rest are the same as in Embodiment 1.

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Abstract

The invention relates to a rare earth sesquioxide crystal growth device based on a temperature gradient method, comprising a quartz tube (1), an induction heating coil (2), a zirconia upper insulation layer (3), and a zirconia insulation cylinder (4) , zirconia insulation layer (5), seed protection layer (6) and crucible (7), the induction heating coil (2) is wound on the outer side wall of the quartz cylinder (1), and the zirconia upper insulation layer (3) be arranged on the top of the zirconia heat preservation cylinder (4), and be placed in the quartz cylinder (1) together with it, the described crucible (7) is placed in the zirconia heat preservation cylinder (4), and in the crucible (7) A zirconia insulation layer (5) is arranged between the zirconia insulation cylinder (4), and a zirconia base (10) is arranged at the bottom of the zirconia insulation layer (5). Compared with the prior art, the invention can be used to grow inch-level sesquioxide crystals, and has the advantages of prolonging the service life of a crucible, reducing the cost of growing crystals, and the like.

Description

technical field [0001] The invention relates to the field of crystal growth, and is an innovative design invention for the thermal field and process of the crystal growth process of high melting point rare earth element sesquioxides under the temperature gradient method. Background technique [0002] Rare earth sesquioxide crystal matrix (Lu 2 o 3 、Sc 2 o 3 , Y 2 o 3 etc.) has a series of advantages: cubic crystal system, no birefringence; easy to achieve various rare earth doping, high segregation coefficient; high thermal conductivity 12.5-16.5W / mK; low phonon energy ~ 430cm -1 , low non-radiative transition, high quantum efficiency; with strong field coupling characteristics, Yb-doped ground state energy level split up to 1112cm -1 ; High impact factor, high damage threshold. It has important application prospects in high-power, microchip, ultrafast, mid-infrared and visible light band lasers. However, such crystals have a high melting point (>2400°C) and are d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/16C30B11/02
CPCC30B11/002C30B11/003C30B11/02C30B29/16
Inventor 赵衡煜徐军侯文涛施佼佼罗平王庆国
Owner TONGJI UNIV