Novel electro-laser device based on nanorod

A technology of laser devices and nanorods, which is applied in the laser field, can solve problems such as increasing production costs, unfavorable development of new micro-nano lasers, and strict requirements for the preparation process of micro-nano lasers, so as to improve yield and increase the number of micro-nano lasers , Improve the effect of device yield

Pending Publication Date: 2022-07-29
温州锌芯钛晶科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the preparation process of micro-nano lasers is demanding, requiring ultra-fine micro-nano processing technology, and at the same time has high requirements for the preparation of micro-nano materials such as nanorods, such as strict growth orientation, arrangement, size, etc. These pose challenges to the preparation process of micro-nano lasers, which is not conducive to the development of new micro-nano lasers and the advancement of related basic research, and also increases production costs.

Method used

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  • Novel electro-laser device based on nanorod
  • Novel electro-laser device based on nanorod
  • Novel electro-laser device based on nanorod

Examples

Experimental program
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Embodiment 1

[0033] 40nm p-type GaN is epitaxially grown on a GaN substrate as a hole transport layer, and the p-type GaN layer is made into stripe patterns by photolithography, and nanometers with random horizontal orientation and flat end faces are grown on p-type GaN by CVD. The rods are used as resonators for laser emission. PMMA is spin-coated on the nanorod light-emitting layer as an insulating filling layer, and the PMMA covered on the top of the nanorods is removed by plasma treatment to make the nanorod light-emitting layer in good contact with the subsequently deposited electron transport layer. The electron transport layer was obtained by spin-coating a ZnO colloidal solution with a thickness of 30 nm. Finally, a LiF / Al electrode with a thickness of 1nm / 100nm was vapor-deposited as the cathode, and the nanorod electrolaser device was fabricated.

Embodiment 2

[0035] The p-type heavily doped Si is used as the conductive substrate and the hole transport layer, and the p-type region of the Si surface layer is made into a stripe pattern by photolithography. Phase growth method in situ grows nanorods with randomly distributed horizontal orientations and flat end faces as resonators for laser emission, and deposits 45nm Al on the luminescent layer of nanorods by ALD 2 O 3 As an insulating filling layer to ensure that the nanorod side regions are exposed for good contact with the subsequently deposited electron transport layer. The electron transport layer was deposited by thermal evaporation as TPBi with a thickness of 40 nm. Finally, a Ti / Au electrode with a thickness of 35nm / 100nm was vapor-deposited as the cathode, and the nanorod electro-laser device was fabricated.

Embodiment 3

[0037] ITO with a thickness of 120 nm was deposited on a glass substrate as a conductive substrate, and the ITO was fabricated into stripe patterns by photolithography with an etching depth of 40 nm, and PEDOT:PSS / TFB with a thickness of 40 nm / 20 nm was deposited on the ITO as a void Hole transport layer, nanorods with random distribution of long horizontal orientation and flat end faces are deposited on TFB by dry transfer as a resonator for laser emission, spin-coated PMMA on the nanorod light-emitting layer as an insulating filling layer, and treated by plasma Removing the PMMA covering the top of the nanorods made the nanorod light-emitting layer in good contact with the subsequently deposited electron transport layer. The electron transport layer was obtained by spin-coating a ZnO colloidal solution with a thickness of 30 nm. Finally, a LiF / Al electrode with a thickness of 1nm / 100nm was vapor-deposited as the cathode, and the nanorod electrolaser device was fabricated.

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Abstract

The invention discloses a novel electro-laser device based on a nanorod. Comprising a conductive substrate, a hole transport layer, a nanorod light-emitting layer, an electron transport layer and a cathode electrode layer which are sequentially arranged in a laminated mode, the hole transport layer and the cathode electrode layer are both strip-shaped patterns, the strip-shaped patterns of the hole transport layer and the cathode electrode layer are orthogonal in direction, the nanorod light-emitting layer is composed of nanorods which are horizontally oriented and randomly distributed, and the electron transport layer is arranged between the nanorods. The end faces of the nanorods are flat, a resonant cavity can be formed by the nanorods, and gaps between the hole transport layers and gaps between the hole transport layers and the electron transport layers are filled with insulating filling layers. Through orthogonalization pattern processing of the hole transport layer and the cathode electrode layer, the number of micro-nano lasers in the preparation process of a single device is greatly increased, it is guaranteed that a large number of randomly-distributed nanorods form an effective laser, the device yield can be effectively increased, and meanwhile the cost is reduced.

Description

technical field [0001] The invention relates to the field of laser technology, in particular to a novel electro-laser device based on nanorods. Background technique [0002] With the development of micro-nano technology and micro-nano photonics, the application prospect of micro-nano laser is attracting attention. Micro-nano laser is a micro-nano device that uses luminescent materials such as micro / nano rods as resonators and emits laser light under optical or electrical pumping. Since the size of the resonant cavity in the micro-nano laser is comparable to the emission wavelength, some unique physical effects will be produced in the electromagnetic resonator, which is of great significance for basic research. At the same time, the micro-nano laser also has advantages in the fields of optical computing, information storage and nano-analysis. Broad application prospects. [0003] However, the preparation process of micro-nano lasers has strict requirements, requiring ultra-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/10H01S5/30
CPCH01S5/1042H01S5/30
Inventor 李静戴兴良何海平叶志镇
Owner 温州锌芯钛晶科技有限公司
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