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A method for fabricate a novel trap structure for a single crystal silicon solar cell

A technology of solar cells and light trapping structure, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high cost of rare and precious metals, reduced battery efficiency and service life, battery ion recombination and PID, etc., to improve light absorption income , Simplified production process, uniform shape effect

Pending Publication Date: 2018-12-11
NINGXIA UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the method is simple, the cost of using rare and precious metals is high, and the residual metal ions are likely to cause battery ion recombination and PID phenomena, thereby effectively reducing battery efficiency and service life.

Method used

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  • A method for fabricate a novel trap structure for a single crystal silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] RCA technology is used to clean and dry the silicon wafer. Thermal growth of 80nm thick SiO at 750°C 2 Layer, as a photolithography mask; the initial speed of uniform glue is 800r / min, and the time is 5s; 1. Developing treatment, exposure time is set to 90s, and developing time is 50s; then the developed silicon wafer is post-baked at 120°C for 10 minutes to finalize the shape; prepare HF:NH 4 The solution with a mass ratio of F of 3:10 de-SiO 2 , etch for 1.5min, and then remove the photoresist in an acetone solution. A THMA solution with a concentration of 10% was used to etch the silicon wafer for 60 minutes under the condition of a constant temperature water bath of 80° C. to obtain a micro-nano texture.

Embodiment 2

[0045] RCA technology is used to clean and dry the silicon wafer. Thermal growth of 120nm thick SiO at 800°C 2 Layer, as a photolithography mask; the initial speed of uniform glue is 900r / min, and the time is 8s; 1. Developing treatment, exposure time is set to 95s, and developing time is 70s; then the developed silicon wafer is post-baked at 125°C for 15 minutes to finalize the shape; prepare HF:NH4 A solution with a mass ratio of F of 2:5 to remove SiO 2 , etch for 2.5min, and then remove the photoresist in an acetone solution. A THMA solution with a concentration of 15% was used to etch the silicon wafer for 80 minutes under the condition of a constant temperature water bath of 85° C. to obtain a micro-nano pore texture.

Embodiment 3

[0047] RCA technology is used to clean and dry the silicon wafer. Thermal growth of 160nm thick SiO at 850°C 2 Layer, as a photolithography mask; the initial speed of uniform coating is 1000r / min, and the time is 12s; 1. Development treatment, exposure time is set to 100s, and development time is 60s; then the developed silicon wafer is post-baked at 110°C for 20 minutes to finalize the shape; prepare HF:NH 4 A solution with a mass ratio of F of 1:2 to remove SiO 2 , etch for 4min, and then remove the photoresist in acetone solution. The silicon wafer was etched with a 20% THMA solution in a constant temperature water bath at 75° C. for 120 minutes to obtain a micro-nano texture.

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Abstract

The invention discloses a preparation method of a novel trap structure for a monocrystalline silicon solar cell. After the silicon wafer iswashed by RCA method, the silicon dioxide was grown as a photolithographic mask, and then homogenized, photolithographed, developed and etched to obtain micro-nano columnar pore texture. The surface micro-nano texture of the crystalline silicon solar cell prepared by the invention does not introduce dilute noble metal ions, has low cost, does not cause battery surface composite to reduce battery conversion efficiency, has uniform micro-nano texture structure, has good process repeatability and controllability, and is suitable for industrial production.

Description

technical field [0001] The invention relates to the field of photovoltaic solar cells, and more specifically relates to a method for preparing a novel light-trapping structure capable of improving the light absorption of monocrystalline silicon solar cells. Background technique [0002] A photovoltaic solar cell is a device that converts light energy into electrical energy, so improving the light absorption rate and light utilization rate of solar cell components is one of the key factors to improve cell efficiency. Surface texturing is an important process in the process of solar cell preparation. The light reflectance of planar silicon is as high as 35-45%, which severely limits the conversion efficiency of silicon-based cells. Alkali etching of monocrystalline silicon and acid etching of polycrystalline silicon are usually used to obtain surface texture, and to prepare SiO on the surface of the battery. x ,TiO x or Si x N y Anti-reflection coatings are used to increa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236H01L31/18
CPCH01L31/02366H01L31/1804Y02E10/547Y02P70/50
Inventor 马晓波陈焕铭杨利利曹志杰
Owner NINGXIA UNIVERSITY
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