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Transfer method of quantum dot film

A technology of quantum dots and thin films, applied in the field of display devices, can solve the problems of increased cost, weak adsorption capacity, and low surface energy of elastomer stamps, and achieves the advantages of reducing surface energy, weakening adhesion energy, and increasing adhesion energy. Effect

Active Publication Date: 2018-12-11
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a transfer printing method of quantum dot film, aiming to solve the problem that existing elastomer stamps have low surface energy and weak adsorption capacity, which will cause defects in the film pattern during the transfer printing process, and it is difficult to transfer the quantum dot film. The dot film is completely peeled off from the donor substrate, which requires greater pressure and faster peeling speed on the stamp, which increases the requirements for transfer printing equipment and processes and increases the cost.

Method used

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  • Transfer method of quantum dot film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] 1. Preparation of Donor Substrate

[0045] Si / SiO 2 The substrate is treated with UV-ozone for 10-30 minutes, cleaned with plasma water, immersed in octadecyltrichlorosilane (OTS)-hexadecane solution (concentration range 1mmol / L-5mmol / L) for 1h-2h, and then sequentially in Sonicate in chloroform, isopropanol, and methanol for 10-30 minutes, and then dry at 120°C-150°C to obtain Si / SiO with OTS self-assembly on the surface 2 The substrate served as the donor base with the OTS as the anti-adhesion layer. The quantum dots are spin-coated on the donor substrate, and a flat quantum dot film is obtained after drying.

[0046] 2. The first surface treatment of PDMS stamp

[0047] The patterned PDMS stamp is prepared by casting method, the pattern type corresponds to the required quantum dot pattern, and the mass ratio of prepolymer and curing agent is (5-20):1. Use UVO to treat the surface of the PDMS stamp exposed outside the mask for 10min-30min.

[0048] 3. First trans...

Embodiment 2

[0055] 1. Preparation of Donor Substrate

[0056] Si / SiO 2 The substrate is treated with UV-ozone for 10-30 minutes, cleaned with plasma water, immersed in octadecyltrichlorosilane (OTS)-hexadecane solution (concentration range 1mmol / L-5mmol / L) for 1h-2h, and then sequentially in Sonicate in chloroform, isopropanol, and methanol for 10-30 minutes, and then dry at 120°C-150°C to obtain Si / SiO with OTS self-assembly on the surface 2 The substrate served as the donor base with the OTS as the anti-adhesion layer. The quantum dots are spin-coated on the donor substrate, and a flat quantum dot film is obtained after drying.

[0057] 2. The first surface treatment of PDMS stamp

[0058] The patterned PDMS stamp is prepared by casting method, the pattern type corresponds to the required quantum dot pattern, and the mass ratio of prepolymer and curing agent is (5-20):1. use 2 Plasma treat the surface of the PDMS stamp exposed outside the mask for 10min-30min.

[0059] 3. First tr...

Embodiment 3

[0066] 1. Preparation of Donor Substrate

[0067] Si / SiO 2 The substrate is treated with UV-ozone for 10-30 minutes, cleaned with plasma water, immersed in octadecyltrichlorosilane (OTS)-hexadecane solution (concentration range 1mmol / L-5mmol / L) for 1h-2h, and then sequentially in Sonicate in chloroform, isopropanol, and methanol for 10-30 minutes, and then dry at 120°C-150°C to obtain Si / SiO with OTS self-assembly on the surface 2 The substrate served as the donor base with the OTS as the anti-adhesion layer. The quantum dots are spin-coated on the donor substrate, and a flat quantum dot film is obtained after drying.

[0068] 2. The first surface treatment of PDMS stamp

[0069] The patterned PDMS stamp is prepared by casting method, the pattern type corresponds to the required quantum dot pattern, and the mass ratio of prepolymer and curing agent is (5-20):1. Use Ar 2 Plasma treat the surface of the PDMS stamp exposed outside the mask for 10min-30min.

[0070] 3. First...

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Abstract

The invention belongs to the field of display devices and provides a transfer method of a quantum dot film. The invention provides a transfer method of a quantum dot film, wherein a thin layer with surface energy >= 80 mN / m is generated on the surface of an elastomer seal, so that the surface energy of the elastomer seal is increased, thereby increasing the adhesion energy of the elastomer seal and the quantum dot film; Upon completion of the first transfer, By quenching the elastomer seal, the surface of the elastomer seal produces micro-cracks in the low temperature environment after the surface treatment, and the non-polar silicon fluid in the seal will diffuse to the surface through these micro-cracks, thus reducing the surface energy of the elastomer seal and weakening the adhesion energy of the elastomer seal to the quantum dot film. As such, two surface treatment before and aft that elastomer seal can effectively improve the integrity of the quantum dot pattern after the transfer, reduce the requirement on the transfer process parameters, and reduce the process cost.

Description

technical field [0001] The invention belongs to the field of display devices, in particular to a method for transferring quantum dot films. Background technique [0002] Quantum dots have many advantages such as easy adjustment of luminescent color, high color saturation, solution processability, high stability, etc., so they are regarded as strong competitors for the next generation of display technology. In the preparation of quantum dot thin films, the spin coating method is the fastest and convenient solution processing method with good film quality, but generally it can only be used to prepare monochrome light-emitting devices, and in the manufacture of full-color light-emitting devices, it is necessary to prepare patterned quantum dot film. [0003] At present, the preparation methods of patterned quantum dot films mainly include inkjet printing, 3D printing, and transfer printing. Among them, the transfer printing method is usually to prepare a quantum dot film on t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/00H01L51/50H10K99/00
CPCH10K71/12H10K71/80H10K50/115
Inventor 张滔向超宇李乐辛征航张东华邓天旸
Owner TCL CORPORATION
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