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278 results about "Pattern type" patented technology

Instruction acquisition control method based on simultaneous multithreading

The invention provides an instruction acquisition control method based on simultaneous multithreading, which includes the steps: in each clock cycle of a processor, reading a PC (personable computer) value of instructions by an instruction acquisition component according to a program counter, selecting two threads with high priority as instruction acquisition threads firstly, and then computing the actual instruction number required by each instruction acquisition thread so as to read the instructions; according to an IPC (inter-process communication) value and the Cache failure rate, enabling a dual-priority resource allocation mechanism to compute system resources required by the threads in an instruction acquisition stage and complete dynamic allocation of the resources; matching a TBHBP (thread branch history branch predictor) with the instruction acquisition operations of the instruction acquisition component, acquiring a pattern type match position Sc by connecting global historical information with local historical information read by a branch instruction Bi to utilize as an index of a secondary PHT (pattern history table), and inputting computed results to a BRT (branch result table); and when the branch instruction Bi is executed again, judging whether CONF fields are larger than or equal to 2 or not by the aid of a selector, directly outputting the recorded branch results if the CONF fields are larger than or equal to 2, and finally placing the acquired instruction into an instruction Cache, so that all operations of instruction acquisition control are completed.
Owner:HARBIN ENG UNIV

Well pattern rebuilding method and device for water-injection development of old oil field

The invention discloses a well pattern rebuilding method and device for the water-injection development of an old oil field. The method comprises the steps that various factors for influencing well pattern arrangement are taken into account, and mesh parameter data in geologic modeling and numerical reservoir simulation computed results are stacked and computed to obtain parameter distribution of series of strata; the mesh comprehensive evaluation index of the series of strata is computed, and a comprehensive evaluation index distribution diagram of the series of strata is obtained; well patterns are arranged on the comprehensive evaluation index distribution diagram of the series of strata according to different well pattern types, well positions are adjusted according to the characteristics of the comprehensive evaluation index distribution diagram, and initial well pattern arrangement schemes are obtained; for each initial well pattern arrangement scheme, old wells are searched for around the signal wells, and whether the oil wells are utilized is determined according to well conditions and an injection-production relationship; each well pattern arrangement scheme formed finally is evaluated, and the relatively-optimal well pattern arrangement scheme is selected according to the well pattern control degree and a recovery efficiency index. The well pattern rebuilding method and device for the water-injection development of the old oil field can meet the well pattern arrangement requirements of old oil fields in the secondary development process.
Owner:PETROCHINA CO LTD

Method for manufacturing ultrasonic wave embossed release paper artificial leather

InactiveCN101570938AOvercome the problem of single leather textureNo cavitationLamination ancillary operationsPattern makingFoaming agentPotassium
The invention discloses a method for manufacturing ultrasonic wave embossed release paper artificial leather, which comprises the following steps: firstly, preparing raw materials of a bottom blank of the artificial leather, wherein a facing material comprises 100 portions of polyvinyl chloride paste resin, 60 to 70 portions of DOP, 20 to 30 portions of CaCO3 and 5 to 8 portions of potassium and zinc thermal stabilizer, a medium foaming layer comprises 100 portions of polyvinyl chloride paste resin, 65 to 80 portions of DOP, 150 to 250 portions of CaCO3, 4 to 8 portions of potassium and zinc thermal stabilizer and 8 to 16 portions of high-temperature foaming agent, and a bottom material bonding layer comprises 100 portions of polyvinyl chloride paste resin, 50 to 60 portions of DOP, 5 to 20 portions of CaCO3 and 2 to 5 portions of potassium and zinc thermal stabilizer; uniformly stirring the raw materials prepared according to the formula; making the bottom blank of the artificial leather; and obtaining a finished product by ultrasonic wave embossing. The method has the advantages of fully autonomic pattern types and cost conservation. The products of the method have high physical and chemical properties.
Owner:无锡市瑞莺合成革有限公司

Three-dimensional simulation device for edge/bottom water reservoir

The invention relates to a three-dimensional simulation device for an edge/bottom water reservoir. The device comprises a body and a detachable moving side wall which is arranged on the side surface of the body, wherein an accommodating cavity is formed in the body; a gland is arranged on the top of the body; a piston is arranged on the lower part of the gland; a plurality of vent holes communicated with the accommodating cavity are formed in the gland; an annular groove in which a clapboard can be arranged in a sealing mode is formed in the peripheral side wall of the accommodating cavity; a plurality of poroid functional measuring points are formed on all the wall surfaces of the body and the gland and are communicated with the accommodating cavity in a controlled mode; a plurality of granular porous media are fully filled in the accommodating cavity; and a plurality of pipe columns for simulating a mineshaft are arranged in the granular porous media in the accommodating cavity. By the device, edge/bottom water reservoirs which have different thicknesses and are developed at different dip angles in different displacement modes and different well pattern types can be subjected to physical simulation experiment, so that an oil-water percolation mechanism of an oil and gas reservoir can be researched, and the effects of the edge/bottom water reservoirs in different development modes can be evaluated.
Owner:CHINA UNIV OF PETROLEUM (BEIJING) +1

Pattern management method and system of NoSQL database

The invention relates to a pattern management method of a NoSQL database. The pattern management method specifically includes the following steps that firstly, accessing or updating requests are received; secondly, classification is performed on the accessing or updating requests according to pattern types, or new pattern types and interfaces corresponding to the new pattern types are constructed according to the accessing or updating requests; thirdly, according to a pattern management table connected into the database by the accessing or updating requests through the interfaces corresponding to the pattern types, pattern information in the pattern management table is obtained; fourthly, according to a route provided by the pattern management table, data stored under different pattern types in the database are accessed or updated according to the accessing or updating requests. According to the pattern management method of the NoSQL database, unified management of various heterogeneous data in the NoSQL database is performed; according to different types and features of the data, differential pattern and interface design is achieved, and the high reading and writing performance is ensured. Meanwhile, the universal schema management strategy and a universal read-write interface are provided, and convenience is provided for expansion of data patterns.
Owner:INST OF INFORMATION ENG CAS

Two-component asynchronous and synchronous two-stage drafting colorful bunchy yarn spinning method and device

ActiveCN104711730AControl evenly and accuratelyDrafting machinesYarnYarnEngineering
The invention discloses a colorful bunchy yarn spinning method based on two-component combined type asynchronous and synchronous two-stage drafting. The method particularly comprises a drafting and twisting system which comprises a primary drafting unit, a secondary drafting unit and a combining twisting unit, and wherein the primary drafting unit, the secondary drafting unit and the combining twisting unit are arranged front and back. The primary drafting unit comprises a combined rear roller and a middle roller. The secondary drafting unit comprises a front roller and the middle roller. The two-component mixing ratio and dynamic changes of linear density are controlled through a primary asynchronous drafting mechanism, and datum linear density is controlled through a secondary synchronous drafting mechanism. The changes of the linear density (the shape of a bamboo joint attached to datum yarn) can be precisely controlled, and the change of the color of the yarn (the color of the bamboo joint and the color of the datum yarn of the bamboo joint) can be precisely controlled. Meanwhile, the middle roller is controlled to rotate with constant set speed, the reproducibility of the pattern type and color of the variable-linear-density yarn is guaranteed, and the spinning effect is more stable.
Owner:JIANGNAN UNIV

Shape-intrinsic watermarks for 3-D solids

Umbilics of two surfaces are compared and it is determined from this comparison whether the suspect surface is a copy of the original surface based on the comparison. Comparing umbilics includes determining whether locations of the umbilics of the suspect surface match within a specified margin umbilics of the original surface, and determining whether pattern types of umbilics of the suspect surface match pattern types of corresponding umbilics of the original surface. A “weak” test may be performed, in which corresponding points on the two surfaces are compared, wherein the comparison of umbilics is performed if corresponding points of the two surfaces are located within a specified margin of each other. The points may be gridpoints on wireframes, which in turn may be based on lines of curvature of the surfaces. Comparing umbilics is performed if it is determined that each surface has at least one umbilic. Further still, an “intermediate” test may be performed which includes, for each surface, computing the principal directions of lines of curvature at each grid point. The computed directions of lines of curvature for corresponding gridpoints on the surfaces are compared. A determination is made as to whether the suspect surface is a copy of the original surface, based on the comparison.
Owner:MASSACHUSETTS INST OF TECH

Preparation method of silicon micro/nanometer line array with controllable dimension

The invention discloses a preparation method of a silicon micro/nanometer line array with a controllable dimension. The preparation method is characterized in that a silicon chip is used as a substrate, a sample A is obtained through taking out the silicon chip to be dried after the surface of the silicon chip is cleaned, photoresist is coated on the surface of the sample A in a spiral way, and a photoresist layer is baked; a contact type mask is prepared according to the pattern types of the silicon micro/nanometer line array, the mask is utilized for realizing the exposure on the photoresist layer to obtain a sample B, the sample B is developed in developing liquid for 4 to 6 minutes, and exposed photoresist is washed away to obtain a sample C; a gold film with the thickness being 20 to 50 nanometers is coated on the surface of the sample C to obtain a sample D; the sample D is placed into acetone to remove the photoresist and the gold on the sample, and the silicon chip in contact with the gold, i.e. a sample E is obtained; and the sample E is soaked into etching liquid to carry out gold catalysis chemical etching, and the silicon micro/nanometer line array is obtained after the etching completion. The preparation method provided by the invention can be used for obtaining the silicon micro/nanometer line array with the controllable diameter and length and the uniform crystal orientation so that the silicon micro/nanometer line array can realize the practical application to devices.
Owner:HEFEI UNIV OF TECH
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