Method for inhibiting lifting of metal particle through composite film deposited on discharge plasma

A discharge plasma and composite thin film technology, which is applied in the field of plasma deposition, can solve problems such as lack of methods, ineffective suppression of metal particles, and residual air gap between electrodes and films, so as to suppress the lifting of metal particles and facilitate the slow transition of electric field , to avoid the effect of electric field gradient mutation

Inactive Publication Date: 2018-12-14
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the current research in the field of electrical equipment, most of the electrode surface coatings are directly coated with thin films, which will cause uneven thin films and residual air gaps between electrodes and thin films, resulting in local electric field distortion on the electrode surface and even insulation capabilities. Decline
If a single film deposition cannot meet the conditions of having a large dielectric constant and a high resistivity at the same time, and directly covering the electrode surface with an insulating film will cause a sudden change in the electric field gradient, which is likely to cause breakdown of the insulating film; while only covering the electrode surface For semiconductor thin films, since the conductive charging process of the particles plays a leading role at this time, the charging speed of the metal particles is less different than that of the bare electrode, and the inhibitory effect on the initiation of the metal particles is not obvious.
Currently, methods for depositing composite thin films are scarce

Method used

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  • Method for inhibiting lifting of metal particle through composite film deposited on discharge plasma
  • Method for inhibiting lifting of metal particle through composite film deposited on discharge plasma
  • Method for inhibiting lifting of metal particle through composite film deposited on discharge plasma

Examples

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Effect test

Embodiment 1

[0074] Deposition of TiO on copper surface by jet plasma 2 -SiO 2 Composite thin film, the excitation source adopts self-made high-frequency AC power supply HFHV30-2, the voltage amplitude during stable discharge is set to 11kV, the repetition frequency is 20kHz, Ar is used as the excitation gas, the flow rate is set to 4L / min, and another Ar is used as the Carrier gas, which takes the precursor (TiCl 4 The flow rate of TEOS is 50mL / min, and the flow rate of TEOS is 300mL / min), which is mixed with the excitation gas and passed into the discharge electrode. At the same time, it is also mixed with 50mL / min of O 2 To increase the density of the deposited film. First deposit TiO on the Cu surface 2 Thin film for 3min, then on TiO 2 Deposited SiO on the surface 2 Film 5min. The treated samples were tested by SEM and FTIR, respectively. Such as image 3 Shown is TiO deposited on Cu surface 2 Thin films and TiO 2 -SiO 2 SEM cross-section of the bilayer composite film with ...

Embodiment 2

[0076] The model was established by COMSOL to calculate the electric field distortion between the metal particles and the high-voltage electrode before and after the metal electrode surface was covered with a composite film. Spherical copper particles are used, the diameter is 0.2mm, the distance between the upper and lower plates is 4mm, the thickness of the film is 5μm, the voltage of the upper plate is 50kV, the polarity is negative, and the lower plate is grounded. Through the finite element analysis and calculation of the model, it can be concluded that the field strength between the metal particles and the high-voltage electrode near the metal particles reaches the maximum value, and the maximum field strength when the electrode surface is not coated is 1.98×10 8 V / m, while SiO is deposited on the surface of the high voltage electrode 2 -TiO 2 The maximum field intensity after compounding the film is reduced to 1.82×10 8 V / m, and SiO 2 The field strength of the thin f...

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Abstract

The invention discloses amethod for inhibiting lifting of a metal particle through a composite film deposited on a discharge plasma. The method comprises the following steps: step 1, establishing a composite film deposition system; step 2, preprocessing the surface of a deposition sample; step 3, depositing a semiconductor film on the surface of the processed sample; step 4, processing the semiconductor film in the step 3, and eliminating the residual stress; step 5, depositing an insulating film on the processed semiconductor film; and step 6, processing the insulating film in the step 5, andeliminating the residual stress.

Description

technical field [0001] The invention relates to the field of plasma deposition, in particular to a method for suppressing the initiation of metal particles by discharge plasma deposition of composite films. Background technique [0002] GIL / GIS is widely used in the field of UHV transmission because of its large transmission capacity and high reliability. However, in the process of production, installation and operation, and the action of switch joints, it will cause scratches to the surface of the conductor, and at high voltages, it will cause electric field distortion and even local micro-discharge; in addition, more metal particles will be generated in GIL / GIS. Due to electrification, under the action of electric field force, it overcomes the gravity and lifts up, and in the process of lifting up metal particles, it will induce partial micro-discharge and electric field distortion, which seriously affects the insulation level of the equipment. [0003] At present, the tr...

Claims

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Application Information

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IPC IPC(8): C23C16/52C23C16/505
CPCC23C16/505C23C16/52
Inventor 邵涛王瑞雪徐晖章程孔飞
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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