Electron beam lithography method of multi-grid finger electrode and multi-grid finger electrode
A technology of electron beam lithography and electron beam exposure, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of overheating of semiconductor devices, achieve the effects of improving reliability, avoiding local overheating, and uniform size
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Embodiment 1
[0037] Please refer to figure 1 , figure 1 It is a schematic diagram of the implementation flow of the electron beam lithography method for multi-grid finger electrodes provided in Embodiment 1 of the present invention, and the method includes the following steps:
[0038] Step S101, coating electron beam photoresist on the surface of the substrate.
[0039] In an embodiment of the present invention, the electron beam photoresist is spin-coated on the surface of the substrate, wherein the rotation speed in the spin coating is 2000 rpm to 5000 rpm, and a hot plate of 160 to 190 degrees Celsius is used to bake the glue 2 minutes to 5 minutes. The e-beam photoresist can be PMMA, type C2.
[0040] Step S102, performing electron beam exposure treatment on the substrate coated with electron beam photoresist according to the layout pattern; wherein, the layout pattern includes a connecting arm pattern, a plurality of grid finger patterns arranged side by side, and at least two dum...
Embodiment 2
[0049] Please refer to Figure 4 , Figure 4 It is a schematic flow diagram of the realization of the preparation method of the multi-grid finger electrode provided in Embodiment 4 of the present invention, and the method includes the following steps:
[0050] Step S201, coating electron beam photoresist on the surface of the substrate.
[0051] Step S202, performing electron beam exposure treatment on the substrate coated with electron beam photoresist according to the layout pattern; wherein, the layout pattern includes a connecting arm pattern, a plurality of gate finger patterns arranged side by side, and at least two dummy gate fingers graphics, the connecting arm graphics are connected to one end of each grid finger graphics, the virtual grid finger graphics are respectively arranged outside the outermost two grid finger graphics, and the virtual grid finger graphics are separated from the connecting arm graphics by a predetermined distance. Set interval.
[0052] Ste...
Embodiment 3
[0060] The preparation method of the multi-gate finger electrode comprises the following steps:
[0061] Step 1. Spin-coat electron beam photoresist PMMA on the epitaxial wafer, wherein the type of electron beam photoresist is C2, the rotating speed in the spin coating process is 2000 rpm to 5000 rpm, and use 160 degrees Celsius to 190 Bake the glue on a hot plate at 100°C for 2 to 5 minutes.
[0062] Step 2, using an electron beam direct writing exposure machine to perform electron beam exposure treatment on the substrate coated with electron beam photoresist according to the layout pattern. Wherein, the layout pattern includes a connection arm pattern, a plurality of gate finger patterns arranged side by side, and two virtual gate finger patterns, and the connection arm pattern is connected to one end of the plurality of gate finger patterns arranged side by side through a gate handle pattern, so The dummy gate finger patterns are arranged outside the outermost two gate fin...
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