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Electron beam lithography method of multi-grid finger electrode and multi-grid finger electrode

A technology of electron beam lithography and electron beam exposure, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of overheating of semiconductor devices, achieve the effects of improving reliability, avoiding local overheating, and uniform size

Active Publication Date: 2020-09-01
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides an electron beam lithography method of a multi-grid finger electrode and a multi-grid finger electrode to solve the problem in the prior art that the width of the outermost grid finger of the multi-grid finger electrode is smaller than that of other grid fingers. width, leading to localized overheating of semiconductor devices

Method used

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  • Electron beam lithography method of multi-grid finger electrode and multi-grid finger electrode
  • Electron beam lithography method of multi-grid finger electrode and multi-grid finger electrode
  • Electron beam lithography method of multi-grid finger electrode and multi-grid finger electrode

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Embodiment 1

[0037] Please refer to figure 1 , figure 1 It is a schematic diagram of the implementation flow of the electron beam lithography method for multi-grid finger electrodes provided in Embodiment 1 of the present invention, and the method includes the following steps:

[0038] Step S101, coating electron beam photoresist on the surface of the substrate.

[0039] In an embodiment of the present invention, the electron beam photoresist is spin-coated on the surface of the substrate, wherein the rotation speed in the spin coating is 2000 rpm to 5000 rpm, and a hot plate of 160 to 190 degrees Celsius is used to bake the glue 2 minutes to 5 minutes. The e-beam photoresist can be PMMA, type C2.

[0040] Step S102, performing electron beam exposure treatment on the substrate coated with electron beam photoresist according to the layout pattern; wherein, the layout pattern includes a connecting arm pattern, a plurality of grid finger patterns arranged side by side, and at least two dum...

Embodiment 2

[0049] Please refer to Figure 4 , Figure 4 It is a schematic flow diagram of the realization of the preparation method of the multi-grid finger electrode provided in Embodiment 4 of the present invention, and the method includes the following steps:

[0050] Step S201, coating electron beam photoresist on the surface of the substrate.

[0051] Step S202, performing electron beam exposure treatment on the substrate coated with electron beam photoresist according to the layout pattern; wherein, the layout pattern includes a connecting arm pattern, a plurality of gate finger patterns arranged side by side, and at least two dummy gate fingers graphics, the connecting arm graphics are connected to one end of each grid finger graphics, the virtual grid finger graphics are respectively arranged outside the outermost two grid finger graphics, and the virtual grid finger graphics are separated from the connecting arm graphics by a predetermined distance. Set interval.

[0052] Ste...

Embodiment 3

[0060] The preparation method of the multi-gate finger electrode comprises the following steps:

[0061] Step 1. Spin-coat electron beam photoresist PMMA on the epitaxial wafer, wherein the type of electron beam photoresist is C2, the rotating speed in the spin coating process is 2000 rpm to 5000 rpm, and use 160 degrees Celsius to 190 Bake the glue on a hot plate at 100°C for 2 to 5 minutes.

[0062] Step 2, using an electron beam direct writing exposure machine to perform electron beam exposure treatment on the substrate coated with electron beam photoresist according to the layout pattern. Wherein, the layout pattern includes a connection arm pattern, a plurality of gate finger patterns arranged side by side, and two virtual gate finger patterns, and the connection arm pattern is connected to one end of the plurality of gate finger patterns arranged side by side through a gate handle pattern, so The dummy gate finger patterns are arranged outside the outermost two gate fin...

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Abstract

The invention is applicable to the technical field of semiconductors, and provides an electron beam lithography method for a multi-gate finger electrode and a multi-gate finger electrode. The electronbeam lithography method for a multi-gate finger electrode comprises the following steps: coating electron beam photoresist on a surface of a substrate; performing electron beam exposure treatment onthe substrate coated with the electron beam photoresist according to layout patterns; wherein the layout patterns comprise a connecting arm pattern, a plurality of side-by-side arranged gate finger patterns and at least two virtual gate finger patterns, wherein the connecting arm pattern is connected with one end of each gate finger pattern, the virtual grid finger patterns are respectively arranged on the outer sides of the outermost two gate finger patterns, and the virtual gate finger patterns are spaced apart from the connecting arm pattern at a preset interval; and the substrate after theelectron beam exposure processing is subjected to development processing. The electron beam lithography method provided by the invention can prepare a multi-gate finger electrode of a uniform size and improve the reliability of a device.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an electron beam photolithography method of a multi-grid finger electrode and the multi-grid finger electrode. Background technique [0002] Electron beam lithography is a new technology integrating high-tech such as electron optics, precision machinery, ultra-high vacuum, and computer automatic control. It is one of the key technologies to promote the further development of microelectronics and microfabrication technology. Electron beam lithography is mainly suitable for ultra-fine processing below 0.5 microns, and can realize the exposure of tens of nanometer lines. [0003] The gate electrode with multiple gate fingers connected in parallel can increase the total gate width of the semiconductor device die, thereby increasing the output power of the semiconductor device. Small grid length multi-finger electrodes need to be prepared by electron beam lithograp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027H01L21/28H01L29/423
CPCH01L21/0274H01L29/401H01L29/42312
Inventor 韩婷婷冯志红吕元杰敦少博顾国栋
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP