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A kind of neurosynaptic device based on a-tsc:o ceramic film and its preparation method

A technology of ceramic thin film and neural synapse, which is applied in the direction of electrical components, can solve the problems of research reports on the application of optoelectronics field, and achieve the effect of large-scale production, good resistive properties, and simple preparation process

Active Publication Date: 2020-02-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Based on the above content, we can see that the existing Ti 3 SiC 2 The development and research of applications mainly focus on high-temperature structural materials, electrode materials, machinable ceramic materials, anti-friction component materials and anti-corrosion protective layers, and there are no research reports on their application in the field of optoelectronics

Method used

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  • A kind of neurosynaptic device based on a-tsc:o ceramic film and its preparation method
  • A kind of neurosynaptic device based on a-tsc:o ceramic film and its preparation method
  • A kind of neurosynaptic device based on a-tsc:o ceramic film and its preparation method

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Embodiment

[0031] This embodiment provides a neurosynaptic device, such as figure 1 As shown, its structure from bottom to top is "ITO slide 1, high oxidation a-TSC:O film 2, low oxidation a-TSC:O film 3, a-TSC film 4" vertical four-layer structure, "high Oxygenated / low-oxidized a-TSC:O thin film 3" double-layer structure serves as a double barrier layer (i.e., the dielectric layer of a synaptic device).

[0032] This embodiment provides a method for preparing the above-mentioned synaptic device, and the preparation process includes the following steps:

[0033] Step A: prepare the ITO glass slide 1 as a transparent substrate with a bottom electrode, and perform cleaning and drying according to a standard process;

[0034] Step B: Using Ti 3 SiC 2 Polycrystalline powder is used as the raw material target, oxygen and argon are used as the working gas, and the ratio of oxygen and argon is 4:75, and a-TSC:O thin film 2 is deposited on the ITO glass slide 1 by reactive radio frequency spu...

Embodiment 2

[0058] This embodiment provides a method for preparing a synapse device, and the preparation process includes the following steps:

[0059] Step A: Prepare a K9 glass substrate as a transparent substrate, and perform cleaning and drying according to standard processes; then deposit an ITO film on it as a bottom electrode;

[0060] Step B: Using Ti 3 SiC 2 Polycrystalline powder is used as the raw material target, oxygen and argon are used as the working gas, and the ratio of oxygen and argon is 4:75, and a-TSC:O thin film 2 is deposited on the ITO glass slide 1 by reactive radio frequency sputtering as the first resistive layer , the specific operation is as follows:

[0061] B1: Target preparation:

[0062] Ti 3 SiC 2 Add the powder into deionized water and stir evenly to obtain Ti 3 SiC 2 dispersion, and then the Ti 3 SiC 2 Put the dispersion liquid into an aluminum tray with a diameter of 90 mm and a thickness of 3 to 4 mm, and then put the aluminum tray in a vacuu...

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Abstract

A neural synapse device based on a-TSC:O ceramic film and a preparation method thereof belong to the technical field of optoelectronic devices. On the basis of the traditional memristive switching device structure, the present invention innovatively proposes the dielectric layer structure of "highly oxidized a-TSC:O thin film / low-oxidative a-TSC:O thin film", which broadens the dielectric layer material of the neural synapse device. selection range. Because the resistance-switching properties of the a-TSC:O film are adjustable in a wide range, and the intrinsic a-TSC ceramic film has good conductivity and transparency in the near-infrared band, it not only makes the a-TSC:O film have good resistance It can be used as the dielectric layer of neural synapse devices, and the intrinsic a-TSC ceramic film can be used as the top electrode material and the top electrode formed by the transparent conductive film can be used to construct a near-infrared fully transparent neural synapse device. In addition, the present invention proposes that the preparation process of the neural synapse device is simple, low in cost, and high in reliability, which is favorable for realizing large-scale production.

Description

technical field [0001] The invention belongs to the technical field of photoelectric devices, and in particular relates to a synapse device based on a-TSC:O ceramic film and a preparation method thereof. Background technique [0002] In recent years, memristors have become the new darling of next-generation storage technology, and in the field of intelligent devices and synapse simulation research, memristors have also attracted the attention of researchers due to their novel characteristics. The researchers found that according to the theoretical model of the memristor, its resistance value can change with the applied voltage and can remember the changed state. The behavior and principle of synapses have a high similarity. This similarity makes memristors very suitable as neurosynaptic bionic devices, and they are used to construct neuromorphic chips, which in turn are used in artificial neural networks. In traditional neuromorphic chips, transistors are the basic unit fo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/24H10N70/881H10N70/026
Inventor 宋宇浩次会聚陈奕丞袁余涵李东阳李伟
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA