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cmp slurry composition for polishing copper and polishing method using same

A composition and slurry technology, applied in polishing compositions containing abrasives, chemical instruments and methods, other chemical processes, etc., can solve the problems of complex manufacturing process, increase in miniaturization, and decrease in yield, etc. The effect of minimizing sag

Active Publication Date: 2020-12-29
SAMSUNG SDI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In particular, with the recent trend toward miniaturization and high integration of semiconductor devices, the semiconductor manufacturing process has become complicated, while the miniaturization of semiconductor components is increasing, and slight unevenness in a single process may cause a serious drop in yield

Method used

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  • cmp slurry composition for polishing copper and polishing method using same
  • cmp slurry composition for polishing copper and polishing method using same
  • cmp slurry composition for polishing copper and polishing method using same

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specific Embodiment approach

[0069] Next, the configuration and effects of the present invention will be described in more detail with reference to some examples. It should be understood that these examples are provided for illustrative purposes only and are not to be construed as limiting the invention in any way.

[0070] Descriptions of details apparent to those skilled in the art will be omitted for clarity.

preparation Embodiment 1

[0072] The water of 20g is placed in the RBF reactor of 100mL, in the reactor, add the acrylic acid (AA) of 2.2g, the methacrylamido tetrazole (MATz) of 0.522g and the initiator (V-50 of 0.64g; 2,2'-Azobis(2-methylpropionamidine) dihydrochloride), then KOH was added to adjust the pH to 12. While refluxing for 30 minutes under a nitrogen atmosphere, the internal temperature of the reactor was raised to 80° C., followed by stirring / heating to perform polymerization for 2 hours, thereby preparing a copolymer I. The molecular weight of Copolymer I was measured by water-soluble GPC and is shown in Table 1. GPC measurement was performed using a Shodex SB806MHQ column with PEO (polyethylene oxide) as a standard. In addition, the molar ratios of acrylic acid (AA) and methacrylamidotetrazole (MATz) in Copolymer I were measured and shown in Table 1.

preparation Embodiment 2

[0074] Copolymer II was prepared in the same manner as in Preparation Example 1 except that 0.16 g of the initiator was added thereto. The molecular weight of Copolymer II was measured by water-soluble GPC and is shown in Table 1. GPC measurement was performed using a Shodex SB806MHQ column with PEO (polyethylene oxide) as a standard. In addition, the molar ratios of acrylic acid (AA) and methacrylamidotetrazole (MATz) in Copolymer II were measured and shown in Table 1.

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Abstract

The present invention relates to: a CMP slurry composition for polishing copper, containing an oxidizing agent, a corrosion inhibitor, a chelating agent, a solvent, and a copolymer of (meth)acrylic acid and a (meth)acrylamide compound, which has an azole substituent; and a polishing method using the same.

Description

technical field [0001] The present invention relates to a CMP slurry composition for polishing copper and a polishing method using the same. More specifically, the present invention relates to a CMP slurry composition that can suppress dishing during polishing of copper interconnects (copper interconnect, copper wire interconnect, copper wire, copper interconnect wire) while Improving planarity; and a polishing method using the CMP slurry composition. Background technique [0002] Chemical mechanical planarization (CMP) is a semiconductor lithography technique and refers to the process of polishing a wafer to remove fine patterns and steps in the construction of stacked circuits. Generally, CMP slurry for polishing copper is prepared by adding abrasives, oxidizing agents, Cu ion chelating agents, corrosion inhibitors, pH regulators, etc. to ultrapure water. [0003] In the CMP process, while the slurry containing these components is supplied, the polishing pad is brought i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02C09K3/14C23F3/04H01L21/321H01L21/304
CPCC09G1/02C09K3/14C23F3/04H01L21/304H01L21/321C09K3/1454H01L21/3212
Inventor 辛奈律金元中都均奉黄基煜
Owner SAMSUNG SDI CO LTD