A large area liquid crystal region alignment method based on mask exposure method and system thereof
An exposure system and large-area technology, which is applied in microlithography exposure equipment, photolithography exposure equipment, optics, etc., can solve problems affecting directional strength and uniformity, and achieve the effect of simple operation
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[0044] Initially, a mask plate with a one-dimensional grid structure pattern is prepared, and the pattern design area is 2cm*2cm; secondly, a polymerizable organic SU-8 photoresist is coated on the cleaned glass substrate, and the glue is shaken, pre-coated Polymerization treatment to obtain a polymer material sample with a flat surface and a thickness of about 10 μm; then an ultraviolet laser with a wavelength of 360nm and a spot radius of 1.5mm is used as the light source generation system, and the ultraviolet beam emitted by the laser is then passed through the beam parameter adjustment system. Glan Taylor prism and half-wave plate, adjust the laser processing power by rotating the angle of the half-wave plate, so that the beam power is measured as 40μw at the sample processing place, and then pass through a set of concave and convex lens combinations, by changing and adjusting the focal length of the lens and between The laser beam can be expanded and collimated, and finall...
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