A large area liquid crystal region alignment method based on mask exposure method and system thereof
An exposure system and large-area technology, which is applied in microlithography exposure equipment, photolithography exposure equipment, optics, etc., can solve problems affecting directional strength and uniformity, and achieve the effect of simple operation
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[0043] Preferred embodiment one:
[0044] Initially, a mask with a one-dimensional grid structure pattern is prepared, and the design area of the pattern is 2cm*2cm; secondly, the polymerizable organic substance SU-8 photoresist is coated on the cleaned glass substrate. The polymerization process obtains a polymer material sample with a smooth surface and a thickness of about 10μm; then an ultraviolet laser with a wavelength of 360nm and a spot radius of 1.5mm is used as the light source generation system. The ultraviolet beam emitted by the laser then passes through the beam parameter adjustment system, first Glan-Taylor prism and half-wave plate, adjust the laser processing power by rotating the angle of the half-wave plate, so that the beam power is measured at the sample processing place as 40μw, and then through a set of concave and convex lens combinations, by changing and adjusting the lens focal length and distance The placement distance of the laser beam can be expande...
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