Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A large area liquid crystal region alignment method based on mask exposure method and system thereof

An exposure system and large-area technology, which is applied in microlithography exposure equipment, photolithography exposure equipment, optics, etc., can solve problems affecting directional strength and uniformity, and achieve the effect of simple operation

Inactive Publication Date: 2019-01-08
NANKAI UNIV
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, intrinsic defects and foreign matter contamination in the mechanical orientation method have always been the key factors affecting the orientation strength and uniformity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A large area liquid crystal region alignment method based on mask exposure method and system thereof
  • A large area liquid crystal region alignment method based on mask exposure method and system thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Initially, a mask plate with a one-dimensional grid structure pattern is prepared, and the pattern design area is 2cm*2cm; secondly, a polymerizable organic SU-8 photoresist is coated on the cleaned glass substrate, and the glue is shaken, pre-coated Polymerization treatment to obtain a polymer material sample with a flat surface and a thickness of about 10 μm; then an ultraviolet laser with a wavelength of 360nm and a spot radius of 1.5mm is used as the light source generation system, and the ultraviolet beam emitted by the laser is then passed through the beam parameter adjustment system. Glan Taylor prism and half-wave plate, adjust the laser processing power by rotating the angle of the half-wave plate, so that the beam power is measured as 40μw at the sample processing place, and then pass through a set of concave and convex lens combinations, by changing and adjusting the focal length of the lens and between The laser beam can be expanded and collimated, and finall...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a large-area out-of-plane liquid crystal region alignment method and a system thereof based on a mask exposure method. The method uses a mask exposure system to construct a polymer microstructure. The polymer microstructure can be composed of different regions, each region has a characteristic size in the order of tens of microns, and the liquid crystal orientation in the region is uniform. The overall size of polymer microstructure can be from tens of square microns to square decimeters, which can meet the requirements of large-area processing, and the processing rangeand structure design of substrate surface can be adjusted at will. The alignment method and the system of the invention are simple in operation, do not need to form an alignment inducing film on thesubstrate in a mechanical or light-induced manner, can realize the self-alignment of the liquid crystal in a micron-scale region, the alignment direction can be controlled in a micro-region, are favorable for the miniaturization of the liquid crystal device and the three-dimensional liquid crystal structure alignment, and can be widely popularized and applied.

Description

technical field [0001] The invention belongs to the technical field of light modulation, and specifically relates to a large-area liquid crystal region orientation method based on a mask exposure method and a mask exposure system, which are suitable for microprocessing technology and a liquid crystal-based light modulation method. Background technique [0002] The liquid crystal display (LCD) industry is continuously updated due to the diverse market demands ranging from LCD TVs in household appliances to public information services in the social environment. With the development of the Internet, the demand for LCD panels in the global market is increasing. It is reported that since LCD replaced traditional cathode ray tube (CRT) non-flat panel display devices, the global LCD panel market production scale exceeded 100 billion US dollars in 2009. In 2018, South Korea , Japan, mainland China and Taiwan, China, the production capacity of LCD panels is nearly 300 million square ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20G03F7/42G02F1/1337
CPCG02F1/1337G03F7/42G03F7/70383
Inventor 张心正宋筱高少华张玉娇许京军
Owner NANKAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products