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A kind of preparation method of anti-low temperature high resistivity ito conductive film

A high-resistivity, conductive film technology, applied in cable/conductor manufacturing, conductive layers on insulating carriers, circuits, etc., can solve the problems of poor heating effect, low resistivity, slow heating speed, etc., to simplify the process, The effect of improving resistivity and saving cost

Active Publication Date: 2020-12-15
株洲火炬安泰新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to improve the working performance of the current ITO film, the resistivity is usually low, generally at 5×10 -4 About Ω·cm, the heating speed is slow, and the heating effect is not good

Method used

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  • A kind of preparation method of anti-low temperature high resistivity ito conductive film

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] This embodiment provides a method for preparing a low-temperature resistant high-resistivity ITO conductive film, and its specific steps are as follows:

[0036] S1. Preparation of ITO target

[0037] S11. Selecting indium oxide powder with a particle size of 0.5 μm and tin oxide powder with a particle size of 50 nm, the mass fraction ratio of indium oxide powder and tin oxide powder is 55:45;

[0038] S12. Wet-mix the indium oxide powder and tin oxide powder in step S11, the moisture content of the powder is 2%, and granulate at 50°C after mixing evenly to obtain ITO powder;

[0039] S13. Pass the ITO powder prepared in step S12 through a vibrating sieve to remove agglomerates, and the mesh number of the sieve is 200 mesh;

[0040] S14. Pack the ITO powder processed in step S13 into a mould, and perform cold isostatic pressing under a pressure of 350 MPa to obtain an ITO blank;

[0041] S15. Put the ITO blank processed in step S14 into a sintering furnace, and sinter...

Embodiment 2

[0045] This embodiment provides a method for preparing a low-temperature resistant high-resistivity ITO conductive film, and its specific steps are as follows:

[0046] S1. Preparation of ITO target

[0047] S11. Selecting indium oxide powder with a particle size of 72 μm and tin oxide powder with a particle size of 0.1 μm, the mass fraction ratio of indium oxide powder and tin oxide powder is 55:45;

[0048] S12. Wet-mix the indium oxide powder and tin oxide powder in step S11, the moisture content of the powder is 4%, and granulate at 50°C after mixing evenly to obtain ITO powder;

[0049] S13. Pass the ITO powder prepared in step S12 through a vibrating sieve to remove agglomerates, and the mesh number of the sieve is 200 mesh;

[0050] S14. Pack the ITO powder processed in step S13 into a mould, and perform cold isostatic pressing under a pressure of 300 MPa to obtain an ITO blank;

[0051] S15. Put the ITO blank processed in step S14 into a sintering furnace, and sinter...

Embodiment 3

[0055] This embodiment provides a method for preparing a low-temperature resistant high-resistivity ITO conductive film, and its specific steps are as follows:

[0056] S1. Preparation of ITO target

[0057] S11. Selecting indium oxide powder with a particle size of 80 μm and tin oxide powder with a particle size of 0.3 μm, the mass fraction ratio of indium oxide powder and tin oxide powder is 60:40;

[0058] S12. Wet-mix the indium oxide powder and tin oxide powder in step S11, the moisture content of the powder is 2%, and after mixing evenly, granulate at 60° C. to obtain ITO powder;

[0059] S13. Pass the ITO powder prepared in step S12 through a vibrating sieve to remove agglomerates, and the mesh number of the sieve is 200 mesh;

[0060] S14. Pack the ITO powder processed in step S13 into a mould, and perform cold isostatic pressing under a pressure of 280 MPa to obtain an ITO blank;

[0061] S15. Put the ITO blank processed in step S14 into a sintering furnace, and sin...

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Abstract

The invention relates to the technical field of ITO (indium tin oxide) conductive films, and in particular to a low temperature-resistant and high-resistivity ITO conductive film and a preparation method thereof. The preparation method for the ITO conductive film is as follows: S1, an ITO target is prepared; S2, magnetron sputtering is utilized to deposit the ITO target onto the surface of a transparent film matrix with a silicon dioxide barrier to form an ITO conductive plating, so that an ITO conductive film is obtained; S3, the ITO conductive film prepared in step (S2) is annealed, so thatthe final product is obtained. According to the ow temperature-resistant and high-resistivity ITO conductive film, by increasing the content of stannic oxide in the ITO target, the resistance of the ITO conductive film is increased. After resistance is increased, during use, the heating value of the ITO conductive film is also increased, so that surrounding temperature is increased. The ITO conductive film can enable a liquid crystal display to normally operate at low temperature, instantly displaying images, and the operating temperature range of the liquid crystal display is greatly broadened.

Description

technical field [0001] The invention relates to the technical field of ITO conductive films, more specifically, to a low-temperature resistant high-resistivity ITO conductive film and a preparation method thereof. Background technique [0002] Liquid crystal is a special form of matter, which has both the birefringence characteristic of crystal and the fluidity of liquid. Liquid crystal display is a display device made by using liquid crystal molecules to change their optical properties under the action of an external electric field. It has different types and has been widely used in various displays. As an n-type semiconductor material, ITO film has high conductivity and high light transmittance, and is the most commonly used film material for liquid crystal displays. [0003] Liquid crystal materials have fixed clearing points and crystallization points, so liquid crystal displays must be used within a certain temperature range. If the storage or use temperature is too l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/35C23C14/58H01B5/14H01B13/00
CPCC23C14/086C23C14/3414C23C14/35C23C14/5806H01B5/14H01B13/00
Inventor 唐安泰
Owner 株洲火炬安泰新材料有限公司
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