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Gallium nitride based device for artificial photosynthesis and preparation method thereof

An artificial photosynthesis, gallium nitride-based technology, applied in the field of gallium nitride-based devices, can solve the problems of uneven electron collection and difficulty in improving cathode efficiency, and achieve high electron-hole separation efficiency, reduced emissions, and high absorption coefficient Effect

Active Publication Date: 2019-02-22
HEBEI UNIV OF TECH
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Problems solved by technology

And the small-area ohmic contact deposited on the surface of the anode makes the collection of electrons on the device uneven, and the electrons are transferred from the anode to the cathode, which makes it difficult to improve the efficiency of the cathode.

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  • Gallium nitride based device for artificial photosynthesis and preparation method thereof

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[0016] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0017] refer to figure 1 , the GaN-based device for artificial photosynthesis of the present invention has a metal substrate (Cu, In, Sn, Ag, Au, Pb, or Cd, etc.), n + - GaN layer, InGaN layer.

[0018] Its preparation method is as follows:

[0019] 1) On the clean n-type heavily doped gallium nitride layer, the InGaN epitaxial layer is grown by molecular beam epitaxy to obtain n + -GaN / InGaN structure;

[0020] 2) the above n by a bonding machine + -GaN / InGaN structures bonded on metal substrates, either using flip-chip technology or using conductive adhesives to obtain n + -GaN / InGaN structure bonded to the metal substrate, making n + -GaN is in contact with metal and the contact resistance of the contact interface is less than 1x10 -4 Ωcm 2 ; Get device. Excessive contact resistance is not conducive to the transport of holes and ele...

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Abstract

The invention discloses a gallium nitride based device for artificial photosynthesis, which has a metal substrate (Cu, In, Sn, Ag, Au, Pb, Cd, etc.), an n<+>-GaN, and an InGaN layer from bottom to top. The preparation steps are as follows: the InGaN layer is grown on the n-type heavily doped GaN layer by the molecular beam epitaxy technology, and the obtained GaN-based epitaxial wafer is physically or chemically (such as bonding, flip-chip bonding, conductive adhesive, etc.) bonded to the metal substrate, so that electrons in the GaN-based battery can be smoothly introduced onto the metal substrate to obtain the gallium nitride device for artificial photosynthesis. The gallium nitride device of the invention has the advantages of high absorption coefficient, high electron hole separation efficiency and good current uniformity, and can be used as a photoanode material for artificial photosynthesis, and has very important significance for carbon dioxide emission reduction and developmentand utilization of new energy.

Description

technical field [0001] The invention relates to a gallium nitride-based device, in particular to a gallium nitride-based device for artificial photosynthesis and a preparation method thereof. Background technique [0002] With the rapid development of the economy, a large amount of non-renewable resources such as coal and oil are burned. While consuming these fossil fuels, it also aggravates the deterioration of the environment, the most important of which is the greenhouse effect, which causes global warming and sea level rise. , Increase in pests and diseases and other environmental problems. [0003] It is well known that plants and certain bacteria can convert atmospheric CO 2 fixed, the CO 2 Transform into organic matter with industrial value and release oxygen. As early as the 1990s, some researchers proposed the concept of artificial photosynthesis. Using artificial photosynthesis technology can not only photolyze water, but also convert CO 2 Reduction to HCOOH, ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20H01G9/00
CPCH01G9/0029H01G9/205Y02E10/542
Inventor 陈贵锋马苗苗张辉解新建李媛陶俊光刘国栋
Owner HEBEI UNIV OF TECH
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