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Preparation method of shape-controlled silica in-situ coated silicon carbide core-shell structure nanocomposite material

A nanocomposite material and a technology for coating silicon carbide are applied in the field of preparation of silicon carbide in-situ coating silicon carbide core-shell structure nanocomposite materials, and achieve a controllable morphology, simple and efficient preparation process, and strong controllability. Effect

Inactive Publication Date: 2019-03-08
NANCHANG HANGKONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

SiO was prepared by laser synergistic atmosphere sintering 2 The process of coating SiC core-shell nanomaterials has not been reported

Method used

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  • Preparation method of shape-controlled silica in-situ coated silicon carbide core-shell structure nanocomposite material
  • Preparation method of shape-controlled silica in-situ coated silicon carbide core-shell structure nanocomposite material
  • Preparation method of shape-controlled silica in-situ coated silicon carbide core-shell structure nanocomposite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A method for preparing a morphologically controllable silicon dioxide in-situ coated silicon carbide core-shell structure nano composite material.

[0022] (1) Take SiC powder with an average particle size of 1.5μm and a purity of 99.9% as raw material, mix it with a PVA solution with a mass concentration of 5%, the mass ratio of PVA to SiC powder is 10%, and uniaxially under a pressure of 10MPa Press for 3 minutes and get a SiC green disc with a diameter of 4mm and a thickness of 2mm after being ejected from the mold;

[0023] (2) Put the wafer obtained in step (1) into a Nd:YAG laser with continuous wave mode as the laser source for sintering, and the laser power density is 5W / mm 2 , The scanning rate is 600mm / min, the laser beam diameter is 1mm, and the sintering time is 20s. During the entire sintering process, guide the laser beam and keep the laser irradiated in the center of the sample. The resulting sample is SiO 2 In-situ coated SiC core-shell nanocomposite material...

Embodiment 2

[0025] A method for preparing a morphologically controllable silicon dioxide in-situ coated silicon carbide core-shell structure nano composite material.

[0026] (1) Take SiC powder with an average particle diameter of 1.5μm and a purity of 99.9% as raw material, mix it with a PVA solution with a mass concentration of 8%, the mass ratio of PVA to SiC powder is 8%, and uniaxially under a pressure of 20MPa Press for 3 minutes and get a SiC green disc with a diameter of 4mm and a thickness of 1.5mm after being ejected from the mold;

[0027] (2) Put the wafer obtained in step (1) into the Nd:YAG laser with continuous wave mode as the laser light source for sintering, the laser power density is 4.3W / mm 2 , The scanning rate is 480mm / min, the laser beam diameter is 2mm, and the sintering time is 30s. During the entire sintering process, guide the laser beam and keep the laser irradiated in the center of the sample. The resulting sample is SiO 2 In-situ coated SiC core-shell nanocomposi...

Embodiment 3

[0029] A method for preparing a morphologically controllable silicon dioxide in-situ coated silicon carbide core-shell structure nano composite material.

[0030] (1) Take SiC powder with an average particle size of 1.5μm and a purity of 99.9% as raw material, mix it with a PVA solution with a mass concentration of 9%, the mass ratio of PVA to SiC powder is 6%, and uniaxially under a pressure of 30MPa After pressing for 3 minutes, a SiC green disc with a diameter of 4 mm and a thickness of 1 mm is obtained after being ejected from the mold;

[0031] (2) Put the wafer obtained in step (1) into a Nd:YAG laser with a continuous wave mode as the laser source for sintering, and the laser power density is 6.1W / mm 2 , The scanning rate is 360mm / min, the laser beam diameter is 3mm, and the sintering time is 30s. During the entire sintering process, guide the laser beam and keep the laser irradiated in the center of the sample. The resulting sample is SiO 2 In-situ coated SiC core-shell nan...

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Abstract

The invention discloses a preparation method of a shape-controlled SiO2 in-situ coated SiC core-shell structure nanocomposite material. The preparation method comprises the following steps: taking SiCpowder having the mean particle size of 1.5 microns and purity of 99.9% as a raw material, mixing and stirring with a certain amount of PVA (Polyvinyl Alcohol) solution, and granulating; adding SiC particles mixed with the PVA solution into a tablet press, performing axial compression under a pressure of 10-40 MPa for 1-5 minutes, and performing mold stripping to obtain a SiC wafer; and putting the SiC wafer obtained in the previous step into a transparent sealed container, not adding any catalyst, controlling the sintering atmosphere by using mixed gases only, and sintering under a certain power density by taking Nd:YAG laser as a heating source, thereby obtaining the shape-controlled SiO2 in-situ coated SiC core-shell structure nanocomposite material. The diameter of the used laser beams is 1-5 mm, the power density is 0.1-10 kW / mm<2>, the scanning speed is 120-600 mm / min, and the sintering time is 1-60 seconds. The preparation method disclosed by the invention has the advantages ofbeing simple in synthetic process, convenient to operate, low in cost, excellent in controllability and high in yield.

Description

Technical field [0001] The invention relates to the technical field of nano material preparation, in particular to a method for preparing a morphologically controllable silicon dioxide in-situ coated silicon carbide core-shell structure nano composite material. Background technique [0002] Compared with SiC bulk materials, SiC nanowires have a higher energy band gap, a higher critical breakdown electric field and thermal conductivity, a smaller dielectric constant and good mechanical properties. Therefore, SiC nanowires are ideal materials for the preparation of high frequency, high power, low energy consumption and high temperature tolerance devices. SiC nanowires are also considered suitable short-wavelength light-emitting materials, and their applications in light-emitting and optoelectronic devices have also attracted much attention. SiO 2 It has excellent mechanical, chemical and electrical properties, so it can be used as a buffer layer and blocking insulating material in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B35/622C04B35/634C04B35/64
CPCC04B35/565C04B35/622C04B35/63416C04B35/64C04B2235/3418C04B2235/665
Inventor 熊杰李喜宝王思涵李昊昱冯志军黄军同
Owner NANCHANG HANGKONG UNIVERSITY
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