mram and its manufacturing method and electronic equipment including mram

Abstract

Disclosed are a magnetic random access memory device (MRAM), a manufacturing method thereof, and electronic equipment including the MRAM. According to an embodiment, an MRAM may include: a substrate; a memory cell array disposed on the substrate, the memory cell array includes a plurality of memory cells arranged in rows and columns, each memory cell includes a vertical switching device and a A magnetic tunnel junction on the switching device and electrically connected to the first terminal of the switching device, wherein the active region of the switching device at least partially includes a single crystal semiconductor material; a plurality of bit lines formed on the substrate, and each column of memory cells is respectively It is arranged on the corresponding bit line, and the second terminal of the switching device is electrically connected to the corresponding bit line; and a plurality of word lines formed on the substrate, each word line is respectively connected to the switch of each memory cell in the corresponding memory cell row The control terminals of the device are electrically connected.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a magnetic random access memory device (MRAM) based on a vertical type switching device, a manufacturing method thereof, and an electronic device including such an MRAM. Background technique [0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the horizontal type device cannot be easily further scaled down. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, vertical devices are easier to scale down than horizontal devices. A nanowire vertical gate-all-around field effect transistor (V-GAAFET, Vertical Gate-all-around Field Effect Transistor) is one of the candidates for fu...

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Problems solved by technology

[0003] However, for vertical devices, it is difficult to control the gate length, especially for single crystal channel materials

On the other hand, if a polycrystalline channel material is used, the channel resistance is greatly increased compared to single crystal material, making it difficult to stack multiple vertical devices, as this would result in an excessively high resistance

[0004] In addition, although buried bit lines can save area and reduce manufacturing costs, it is difficult to build buried bit lines under vertical transistors in the single crystal channel layer

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