A kind of flexible synaptic bionic device and its preparation method

A technology of devices and synapses, which is applied in the field of flexible synaptic bionic devices and its preparation, can solve the problems of destroying the performance of flexible electronic devices, achieve good time retention and fatigue resistance, improve quality, and achieve the effects of high-efficiency electrical contact

Active Publication Date: 2022-03-15
XUZHOU NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, most of the research on synaptic bionic devices is focused on memristors such as silicon-based semiconductors, while the research on memristor synaptic bionic devices based on flexible substrates is less, because when using flexible substrates for electrode leads, the connection process is difficult. The generated mechanical energy or thermal energy may be transferred to the flexible substrate and the functional materials on it, thereby destroying the performance of flexible electronic devices.

Method used

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  • A kind of flexible synaptic bionic device and its preparation method

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Embodiment 1

[0018] The flexible synapse bionic device of the present invention comprises a flexible polyimide substrate 1, a bottom electrode tin-doped indium oxide film 2, an oxygen-deficient titanium dioxide film layer 3, a titanium dioxide film layer 4, and a zinc oxide film layer 5 from bottom to top. and top electrode copper thin film 6, such as figure 1 shown. Wherein, the thickness of flexible substrate 1 is 1mm, the thickness of bottom electrode film 2 is 500nm, the thickness of anoxic titanium dioxide film 3 is 25nm, the thickness of titanium dioxide film layer 4 is 500nm, the thickness of zinc oxide film layer 5 is 1000nm, the top electrode Thin film 6 has a thickness of 70 nm.

[0019] The method for preparing the flexible synaptic bionic device of the present invention comprises the following steps:

[0020] (1) The bottom electrode film was prepared on a flexible substrate by magnetron sputtering: tin-doped indium oxide was used as the sputtering target, argon was used as t...

Embodiment 2

[0027] The flexible synapse bionic device of the present invention comprises, from bottom to top, a flexible polyethylene terephthalate substrate 1, a bottom electrode aluminum-doped zinc oxide film 2, an oxygen-deficient titanium dioxide film layer 3, a titanium dioxide film layer 4, Zinc oxide thin film layer 5 and top electrode platinum thin film 6. Among them, the thickness of the flexible substrate 1 is 1.5mm, the thickness of the bottom electrode film 2 is 800nm, the thickness of the oxygen-deficient titanium dioxide film 3 is 40nm, the thickness of the titanium dioxide film layer 4 is 300nm, and the thickness of the zinc oxide film layer 5 is 500nm. The electrode thin film 6 has a thickness of 80 nm.

[0028] The method for preparing the flexible synaptic bionic device of the present invention comprises the following steps:

[0029] (1) The bottom electrode film was prepared on a flexible substrate by magnetron sputtering: aluminum-doped zinc oxide was used as the sput...

Embodiment 3

[0036] The flexible synaptic bionic device of the present invention comprises a flexible polyethylene naphthalate substrate 1, a bottom electrode fluorine-doped tin oxide film 2, an oxygen-deficient titanium dioxide film layer 3, a titanium dioxide film layer 4, and zinc oxide from bottom to top. Thin film layer 5 and top electrode gold thin film 6. Among them, the thickness of the flexible substrate 1 is 0.5mm, the thickness of the bottom electrode film 2 is 50nm, the thickness of the oxygen-deficient titanium dioxide film 3 is 10nm, the thickness of the titanium dioxide film layer 4 is 100nm, and the thickness of the zinc oxide film layer 5 is 200nm. The electrode thin film 6 has a thickness of 20 nm.

[0037] The method for preparing the flexible synapse bionic device of the present invention comprises the following steps:

[0038] (1) The bottom electrode film was prepared on a flexible substrate by magnetron sputtering: fluorine-doped tin oxide was used as the sputtering...

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Abstract

The invention discloses a flexible synaptic bionic device and a preparation method thereof, comprising a flexible substrate, a bottom electrode film, an oxygen-deficient titanium dioxide film layer, a titanium dioxide film layer, a zinc oxide film layer and a top electrode film from bottom to top. The bottom electrode film and the top electrode film are connected to the power supply through electrode leads; during preparation, the bottom electrode film, the oxygen-deficient titanium dioxide film layer, the titanium dioxide film layer, the zinc oxide film layer and the top electrode film are sequentially formed on the flexible substrate, and then the bottom electrode film is formed on the bottom electrode film. The electrode film and the top electrode film are provided with electrode leads, and the contact points between the electrode leads and the bottom electrode film and the top electrode film are fixed by high-frequency ultrasonic waves. The flexible synapse bionic device of the present invention not only effectively avoids the damage of the flexible substrate due to the mechanical energy or thermal energy generated by the fixed electrode lead, which causes stress between the bottom electrode or the top electrode and the flexible substrate, but also improves the time retention of the device. And fatigue resistance, improve service life.

Description

technical field [0001] The invention belongs to the field of microelectronic devices, in particular to a flexible synaptic bionic device and a preparation method thereof. Background technique [0002] With the further proportional reduction of the feature size of semiconductor devices, traditional integrated circuit technology is facing severe challenges. The development of brain-like intelligent computers is the direction and goal of future artificial intelligence development. The neural network of the human brain is a highly parallel information processing system, which can efficiently process various information such as vision and hearing, and simulate the human brain's ability to perceive, think, judge and learn, which is of great significance to the development of artificial intelligence. [0003] Synapse is the basic unit of the brain's neural network, and synaptic plasticity is the basis of human brain learning and memory, so the bionic simulation of synapse is an imp...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/801H10N70/841H10N70/8836H10N70/011
Inventor 赵波张超金吴莹
Owner XUZHOU NORMAL UNIVERSITY
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