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N-type thermoelectric thin film and preparation method and application thereof

A thermoelectric thin film, N-type technology, applied in the manufacture/processing of thermoelectric devices, thermoelectric device junction lead materials, chemical instruments and methods, etc., can solve the problem of low Seebeck coefficient of composite thermoelectric thin films, and achieve excellent electrical and mechanical properties Performance, improvement of thermoelectric conversion efficiency, effect of improving thermoelectric conversion efficiency

Active Publication Date: 2019-04-02
DONGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a kind of N-type thermoelectric thin film and its preparation and application, to overcome the defect that the Seebeck coefficient of composite thermoelectric thin film is relatively low in the prior art, the preparation method of the present invention is simple and easy, and the obtained graphene - Bismuth telluride composite N-type thin film has both excellent flexibility and high thermoelectric conversion efficiency

Method used

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  • N-type thermoelectric thin film and preparation method and application thereof
  • N-type thermoelectric thin film and preparation method and application thereof
  • N-type thermoelectric thin film and preparation method and application thereof

Examples

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Effect test

Embodiment 1

[0030] (1) Weigh 50 mg of bismuth telluride powder in a crucible, place it in a tube furnace and continuously feed in N at a rate of 100 mL / min. 2 Air, and raised to 150°C at a heating rate of 3°C / min, kept for 1 hour, cooled to room temperature naturally, and taken out for later use.

[0031] (2) Weigh 0.5 mg of graphite oxide, and simultaneously disperse the heat-treated bismuth telluride powder in 50 mL of deionized water to obtain a graphene oxide-bismuth telluride mixed dispersion; filter the mixed dispersion to form a film , and then dried in a vacuum oven at 60°C for 6 hours; the dried film was placed in a crucible, placed in a tube furnace and continuously fed with NH at a rate of 100mL / min 3 Gas, and the temperature was raised to 400 °C at a rate of 3 °C / min, and then naturally cooled to room temperature after holding for 1 h to obtain a graphene-bismuth telluride composite N-type thermoelectric thin film. The conductivity of the thermoelectric thin film is 14.6S cm ...

Embodiment 2

[0034] (1) Weigh 250mg of bismuth telluride powder in a crucible, place it in a tube furnace and continuously feed N at a rate of 200mL / min 2 The temperature was raised to 200°C at a rate of 4°C / min, kept for 2 hours, then cooled to room temperature naturally, and taken out for later use.

[0035] (2) Weigh 50 mg of graphite oxide, and simultaneously disperse the heat-treated bismuth telluride powder in 50 mL of deionized water to obtain a graphene oxide-bismuth telluride mixed dispersion; the mixed dispersion is suction-filtered to form a film, Then place it in a vacuum oven at 70°C to dry for 12 hours; put the dried film in a crucible, and place it in a tube furnace to continuously feed NH at a rate of 200mL / min. 3 Gas, and the temperature was raised to 500 °C at a rate of 4 °C / min, and then naturally cooled to room temperature after holding for 2 hours to obtain a graphene-bismuth telluride composite N-type thermoelectric thin film. The conductivity of the thermoelectric t...

Embodiment 3

[0038] (1) Weigh 500mg of bismuth telluride powder in a crucible, place it in a tube furnace and continuously feed in N at a rate of 300mL / min 2 Gas, and raised to 250°C at a rate of 5°C / min, kept for 3 hours, then cooled to room temperature naturally, and taken out for later use.

[0039] (2) Weigh 100 mg of graphite oxide, and simultaneously disperse the heat-treated bismuth telluride powder in 50 mL of deionized water to obtain a graphene oxide-bismuth telluride mixed dispersion; the mixed dispersion is suction-filtered to form a film, Then place it in a vacuum oven at 80°C for 24 hours; put the dried film in a crucible, and place it in a tube furnace to continuously feed NH at a rate of 300mL / min. 3 Gas, and the temperature was raised to 600°C at a rate of 5°C / min, and then naturally cooled to room temperature after holding for 3 hours to obtain a graphene-bismuth telluride composite N-type thermoelectric thin film. The conductivity of the thermoelectric thin film is 44.4...

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Abstract

The invention relates to an N-type thermoelectric thin film and a preparation method and application thereof. The thin film takes bismuth telluride as a basal body and graphene as an electric conduction bridge to be connected with bismuth telluride so as to form a three-dimensional network structure. The preparation method comprises the following steps: mixing oxidized graphene-bismuth telluride into dispersion liquid for suction filtration film formation, and then carrying out high temperature reduction in an NH3 gas environment so as to obtain the N-type thermoelectric thin film. The graphene-bismuth telluride composite thin film can be directly used for converting heat energy such as human body waste heat, sunlight heat and mechanical waste heat into electric energy, and has important scientific value and wide application prospect in the wearable field.

Description

technical field [0001] The invention belongs to the field of thermoelectric materials and their preparation and application, in particular to an N-type thermoelectric thin film and its preparation and application. Background technique [0002] The rapid development of electronic technology has brought about tremendous changes in lifestyles. People are gradually pursuing multi-functional, fashionable and beautiful, portable and wearable electronic products, including smart bracelets, smart glasses and electronic skins. However, these wearable devices are still powered by chemical batteries at present, which brings the trouble of frequent battery replacement and the potential harm of battery leakage. In addition, chemical batteries produce a large amount of toxic and harmful substances during the production and disposal process, polluting the environment. The direct conversion of other forms of energy from the environment into electrical energy has attracted the attention of m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16H01L35/22H01L35/34C01B32/184C01B19/00H10N10/852H10N10/01H10N10/855
CPCC01B19/007C01B32/184H10N10/852H10N10/855H10N10/01Y02P20/129
Inventor 李耀刚吴波郭洋侯成义王宏志张青红
Owner DONGHUA UNIV
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