Indium antimonide-based strip micro-structure terahertz modulator and preparation method thereof
An indium antimonide and microstructure technology is applied in the field of microstructure terahertz modulators based on indium antimonide strips and their preparation, and can solve the problems of low quality factor and small modulation depth, etc.
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[0036] A method for preparing a terahertz modulator based on an indium antimonide strip microstructure, using the following steps:
[0037] (1) Fabrication of intrinsic Si substrate: Form a Si layer with a thickness of about 5-200 μm by epitaxial growth method, and the optimum thickness is between 20-100 μm.
[0038] (2) SiO is formed on the Si layer by thermal evaporation technology 2 , the thickness is between 10-300nm, the optimal thickness is 60-80nm; or form Al on Si by atomic layer deposition technology 2 o 3 A thin layer of 50nm was formed at a temperature of 200°C, and then the reacted precursor was washed away with distilled water.
[0039] (3) Fabricate indium antimonide strip microstructure: on the basis of (2), select an indium antimonide target material with a suitable doping concentration, and use magnetron sputtering to fabricate an indium antimonide thin film (thickness depends on different The mixed structure is different, such as the copper-indium antimon...
Embodiment 1
[0046] A terahertz modulator based on indium antimonide strip microstructure, including: a Si substrate with a thickness of 5 μm, and an insulating layer grown on the Si substrate. In this embodiment, SiO with a thickness of 10 nm is used. 2 The dielectric layer is an indium antimonide-based strip microstructure layer grown on the insulating layer, and the strip microstructure layer is a copper-indium antimonide mixed strip microstructure. The thickness of copper is 100nm, the thickness of indium antimonide is the same as that of copper, and the carrier concentration in doped indium antimonide is 5×10 16 cm -3 , realized and determined by semiconductor doping methods such as diffusion and ion implantation. For the copper-indium antimonide hybrid structure, the photoelectric characteristics of indium antimonide can be changed by using indium antimonide with different doping concentrations or by changing the external temperature. The amplitude modulation depth of the Fano reson...
Embodiment 2
[0054] A terahertz modulator based on indium antimonide strip microstructure, including: a Si substrate with a thickness of 20 μm, and an insulating layer grown on the Si substrate. In this embodiment, SiO with a thickness of 30 nm is used. 2 The dielectric layer is an indium antimonide-based strip microstructure layer grown on the insulating layer, and the strip microstructure layer is a copper-indium antimonide mixed strip microstructure. The thickness of copper is 250nm, the thickness of indium antimonide is the same as that of copper, and the carrier concentration in doped indium antimonide is 5×10 18 cm -3 , realized and determined by semiconductor doping methods such as diffusion and ion implantation.
[0055] The preparation method of the terahertz modulator based on the indium antimonide strip microstructure adopts the following steps:
[0056] (1) Using an epitaxial growth method to make a Si substrate;
[0057] (2) Growth of SiO on Si substrates by thermal evapora...
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Abstract
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