An organic solar battery based on modification by sodium alginate and a preparation method thereof
An organic solar cell, sodium alginate technology, applied in nanotechnology, circuit, photovoltaic power generation and other directions for materials and surface science, can solve the problems of not improving battery efficiency, different surface energy, different wettability, etc. Achieve the effect of improving photoelectric conversion efficiency, simple process, and optimized interface quality
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[0032] A method for preparing an organic solar cell modified based on sodium alginate as described above, said preparation method comprising the steps of:
[0033] (a) preparing an electron transport layer on a transparent conductive film substrate;
[0034] (b) On the electron transport layer, a sodium alginate modified layer was prepared by spin coating;
[0035] (c) sequentially preparing an active layer, a hole transport layer, and an anode on the modified layer to obtain the solar cell.
[0036] As a preferred embodiment: the concentration of the deionized aqueous solution of sodium alginate is 0.06 ~ 10 mg / ml;
[0037] When the sodium alginate membrane is prepared, the rotating speed is 1000-5000 rpm, and the time is 30-60 s; the heat treatment temperature is 40-70 °C, and the time is 1-60 minutes.
Embodiment 1
[0038] Embodiment 1: Device structure: FTO / Al-doped ZnO / SA / P3HT:PCBM / MoO 3 / Ag
[0039] (1) SnO doped with fluorine 2 Transparent conductive glass (SnO 2 : F; FTO) use detergent, deionized water, ethanol, acetone, deionized water ultrasonic cleaning in sequence, and dry in an oven at 80 degrees for later use. Zinc acetate dihydrate and aluminum nitrate nonahydrate were dissolved in an ethanol solution with a concentration of 3.5wt%, wherein Al 3+ The doping amount is 1.0 at%. Add 0.1 ml of monoethanolamine as a stabilizer, stir on a 60-degree hot plate for 1 h, and age for more than 24 h to obtain an Al-doped ZnO (ie, AZO) precursor. The AZO precursor solution was spin-coated on the FTO glass substrate with a rotation speed of 2500 rpm for 30 s, and annealed on a hot plate at 400 °C for 30 min. Obtained AZO electron transport layer thin film with a thickness of ~35 nm;
[0040] (2) Dissolve 1 mg of sodium alginate in 15 ml of deionized water and stir at 50°C for 30 min. ...
Embodiment 2
[0046] Example 2: Device structure: FTO / Mg-doped ZnO nanocolumn / SA / P3HT:PCBM / V 2 o 5 / Ag
[0047] (1) SnO doped with fluorine 2 Transparent conductive glass (SnO 2 : F; FTO) use detergent, deionized water, ethanol, acetone, deionized water ultrasonic cleaning in sequence, and dry in an oven at 80 degrees for later use.
[0048] 1 g of zinc acetate was dissolved in 30 ml of ethanol solution, spin-coated on the cleaned FTO glass substrate, and thermally annealed at 400 °C for 1 h to obtain a ZnO seed layer. The thickness is about 20 nm. Zinc acetate and magnesium nitrate were dissolved in deionized water, and hexamethylenetetramine (HMT) was added, wherein the molar ratio of Zn / Mg / HMT was 0.9:0.1:1 to prepare nanopillar growth solution. Immerse the ZnO seed layer face down in the nanopillar growth solution. Put the growth liquid and seed layer together in a Teflon hydrothermal kettle, grow in an oven at 90°C for 2 h, and then take out the samples and dry them in an oven at...
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