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Preparation method of thin film transistor, array substrate and liquid crystal display panel

A technology of thin film transistors and array substrates, which is applied in the field of microelectronics, can solve the problems of insufficient voltage resistance of thin film transistor devices, electrostatic breakdown, and low reliability of thin film transistors, and achieve strong breakdown resistance, improve voltage resistance, and not easily The effect of electrostatic breakdown

Active Publication Date: 2019-10-11
CHENGDU ZHONGDIAN PANDA DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, due to the use of SiO 2 、SiN x Inorganic insulating layer, resulting in insufficient withstand voltage capability of thin film transistor devices, prone to electrostatic breakdown and other problems, so the thin film transistors in the prior art have the problem of low reliability

Method used

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  • Preparation method of thin film transistor, array substrate and liquid crystal display panel
  • Preparation method of thin film transistor, array substrate and liquid crystal display panel
  • Preparation method of thin film transistor, array substrate and liquid crystal display panel

Examples

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Embodiment 1

[0036] figure 1 It is a schematic flow chart of the manufacturing method of the thin film transistor provided in Embodiment 1 of the present invention. Such as figure 1 As shown, the preparation method of the thin film transistor provided in this embodiment may specifically include the following steps:

[0037] S11, forming a first insulating layer of β-type polyvinylidene fluoride on the gate layer.

[0038] S12, forming an indium gallium zinc oxide semiconductor layer on the first insulating layer of β-type polyvinylidene fluoride;

[0039] S13, forming a source electrode and a drain electrode on the indium gallium zinc oxide semiconductor layer;

[0040] S14, forming an insulating protection layer on the source and the drain.

[0041] Specifically, the characteristics of the indium gallium zinc oxide semiconductor layer in the thin film transistor are easily affected by ultraviolet light, water vapor and impurity ions, and the characteristics such as threshold voltage d...

Embodiment 2

[0054] Figure 2a ~ Figure 2e It is a schematic diagram showing the detailed process of the thin film transistor manufacturing method of the present invention. On the basis of Embodiment 1, this embodiment cites specific examples, and further explains the process conditions and process parameters of each step in the foregoing Embodiment 1. For the same part as Embodiment 1, here No longer.

[0055] The preparation method of the thin film transistor of this embodiment comprises the following steps:

[0056] 1) Using an ultrasonic cleaner, first clean the 10cm×10cm×0.5mm glass substrate 1 ultrasonically with acetone or alcohol for 30 minutes to remove surface organic matter and large particles, then take it out and wipe it with a clean cloth with alcohol, and then clean it with pure Rinse with water for 5 minutes, and blow with nitrogen gas until it is dried for use.

[0057] 2) if Figure 2a As shown, on the glass substrate 1 after step 1) cleaning, the gate layer 2 is prep...

Embodiment 3

[0065] On the basis of Embodiment 1, this embodiment cites specific examples, and further explains the process conditions and process parameters of each step in the foregoing Embodiment 1. For the same part as Embodiment 1, here No longer.

[0066] The preparation method of the thin film transistor of this embodiment comprises the following steps:

[0067] 1) Using an ultrasonic cleaner, first clean the 10cm×10cm×0.5mm glass substrate 1 ultrasonically with acetone or alcohol for 30 minutes to remove surface organic matter and large particles, then take it out and wipe it with a clean cloth with alcohol, and then clean it with pure Rinse with water for 5 minutes, and blow with nitrogen gas until it is dried for use.

[0068] 2) if Figure 2a As shown, on the cleaned glass substrate 1 in step 1), the gate layer 2 is prepared by using the magnetron sputtering coating process. Specifically, a 30nm metal Ti layer is first formed, and a 170nm metal Cu layer is formed on the Ti lay...

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Abstract

The invention provides a fabrication method of a thin film transistor, an array substrate and a liquid crystal display panel. The fabrication method of the thin film transistor comprises the followingsteps of forming a Beta-type polyvinylidene fluoride first insulation layer on a gate layer; forming a InGaZnO semiconductor layer on the Beta-type polyvinylidene fluoride first insulation layer; forming a source and a drain on the InGaZnO semiconductor layer; and forming an insulation protection layer on the source and the drain. By the fabrication method, the device reliability can be improved.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a preparation method of a thin film transistor, an array substrate and a liquid crystal display panel. Background technique [0002] Different technological innovations have emerged in the continuous development of semiconductor display technology. As a new type of display material, indium gallium zinc oxide semiconductor has the characteristics of high carrier mobility, good turn-off characteristics, and easy industrial production. Based on indium Gallium zinc oxide semiconductor thin film transistors have also been widely used in the field of liquid crystal displays. [0003] However, since the characteristics of indium gallium zinc oxide semiconductors are easily affected by ultraviolet light, water vapor and impurity ions, threshold voltage drift and other abnormalities will easily occur, so an insulating protective layer should be set in the thin film transistor to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/445H01L21/34H01L29/423H01L29/49H01L29/51H01L29/786G02F1/1362
Inventor 王帅毅
Owner CHENGDU ZHONGDIAN PANDA DISPLAY TECH CO LTD
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