Phase composition controllable indium gallium zinc oxide target material and preparation method thereof

Abstract

The invention discloses a phase composition controllable indium gallium zinc oxide target material and a preparation method thereof. The preparation method includes that indium oxide powder, gallium oxide powder and zinc oxide powder are mixed according to the set molar ratio to obtain a mixed powder; the mixed powder is mixed with the set amount of dispersant, binder and ball milling medium; a ball milling device is applied to control the ball milling parameters, and the ball milling mixing is carried out to obtain a mixed material; the mixed material is sprayed and granulated on a granulator, the product obtained by spray granulation is molded and a target blank is obtained; and the target blank is sintered to obtain the IGZO target material with controllable phase composition. A high quality IGZO target material with single phase and controllable phase is obtained by controlling the process parameters effectively in the preparation process according to the molar ratio of the raw materials. Other mixed phase composition is not contained in the target material, no secondary phase structure is existed between grains and inside, the bonding between grains is compact, and the targetmaterial has high density and has high industrial utilization value.

Description

Technical field [0001] The application belongs to the technical field of metal oxide target materials, and specifically relates to an indium gallium zinc oxide target material with controllable phase composition and a preparation method thereof. Background technique [0002] Indium Gallium Zinc Oxide (IGZO), or indium gallium zinc oxide, is a new type of semiconductor material. It is composed of four elements: In~Ga~Zn~O. Its conductivity type is n-type. The belt width is about 3.5 eV. IGZO thin film materials have the advantages of high mobility, strong chemical stability and relatively simple preparation process. Compared with the most commonly used α-Si materials for thin film transistors (TFT), the electron cloud density of metal ions in IGZO is spherically symmetrically distributed in the amorphous state and is not sensitive to changes in direction, making IGZO materials in the amorphous state It still maintains a high electron mobility, so it can be uniformly fabricated a...

AI Technical Summary

Problems solved by technology

Since the IGZO target is sintered in a multi-component system, uneven distribution of components is prone to occur during the sintering process.

In addition, during the sintering and densification process, the IGZO target may have multiple phase components, such as Ga 2 ZnO 4 , InGaZnO 4 , InGaZn 3 o 6 , InGaZn 4 o 7 , InGaZn 5 o 8 , InGaZn 6 o 9 etc., while the IGZO target containing multiple secondary phases will have a great impact on the properties of the film

For example, the uneven composition of the IGZO target and the existence of various secondary phases will seriously affect the composition and structure of the film, which will affect the performance of the thin film device and hinder the application of the IGZO target.

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