Fabrication method of silicon gain photodetection array device receiving light on side
A manufacturing method and technology for receiving light, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low quantum efficiency of blue light, achieve the effect of solving low quantum efficiency of blue light, improving blue light sensitivity and quantum efficiency, and improving reception rate
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specific Embodiment approach 1
[0045] Specific embodiment one, in conjunction with Fig. 1 to Figure 5 Describe this embodiment mode. The blue light-sensitized silicon-based array device with side incident light provided by this embodiment mode includes a substrate 11 , a buried oxide layer 10 and an avalanche photodiode array arranged in sequence from bottom to top. The avalanche photodiode array includes multiple detection units, multiple isolation regions 9 and multiple electrode leads.
[0046] Among them, a plurality of detection units are regularly arranged to form an array, and each detection unit includes a cathode 1, a non-depletion layer 2, an avalanche layer 3, a field control layer 4, an absorption layer 5, a substrate layer 6, an anode 7 and a light-transmitting layer 8. Cathode 1, non-depletion layer 2, avalanche layer 3, field control layer 4, absorption layer 5, substrate layer 6 and anode 7 are arranged in sequence from outside to inside with the anode 7 as the central axis, and the centra...
specific Embodiment approach 2
[0053] Specific implementation mode 2. This implementation mode is the basic process of blue light-sensitized silicon-based array devices incident on the side of the light, Figure 4-7 Respectively represent parallel connection, series connection, parallel connection first and then series connection, or first series connection and then parallel connection of blue light-sensitized silicon-based array devices with side incident light, the steps are as follows:
[0054] Step 1, selecting a single crystal silicon wafer as the substrate material of the array device, and performing cleaning treatment.
[0055] Step 2. After surface treatment of the silicon wafer cleaned in step 1, a buried oxide layer 10 is formed in the silicon wafer through high-energy and large-dose oxygen injection. The buried oxide layer 10 divides the original silicon wafer into two parts. The thin silicon layer is used to make the array device, and the substrate 11 is underneath.
[0056] Step 3, cleaning th...
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