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Application of fullerene methylene derivative I in perovskite solar cells, perovskite solar cell and preparation method thereof

A fullerene methylene, solar cell technology, applied in the field of solar cells, can solve the problems of high cost, lack of conditions for mass production, etc., and achieves increased grain size, easy purification, and reduced carrier migration. Effect

Active Publication Date: 2019-04-30
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] It can be seen that most of the existing technologies require relatively high costs to purchase and synthesize related modification materials, and do not have the conditions for large-scale production.

Method used

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  • Application of fullerene methylene derivative I in perovskite solar cells, perovskite solar cell and preparation method thereof
  • Application of fullerene methylene derivative I in perovskite solar cells, perovskite solar cell and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0057] S1, the SnCl concentration of 0.1mg / mL 2 .2H 2 0 Ethanol solution was spin-coated on the ITO surface, the spin-coating condition was 2000r, the spin-coating time was 30s, the annealing was at 150°C for 30 minutes, and then at 180°C for 60 minutes.

[0058] S2, the type of perovskite active layer is (FAPbI 3 ) x (MAPbBr 3 ) 1-x , Dissolve the perovskite precursor in a mixed solution of DMF: DMSO=4:1, configure it into a 1.35M perovskite precursor solution, and use the spin-coating rotation speed of 6000r and the spin-coating time of 40s to reduce the calcium The titanium ore precursor was spin-coated onto the surface of the electron transport layer, and at the 20th second, 100 uL of a chlorobenzene (CB) solution of 0.05 mg / mL fullerene methylene derivative I was added dropwise. After the spin coating is finished, annealing is performed at 100°C for 60 minutes to obtain a perovskite layer doped with fullerene methylene derivative I on the surface.

[0059] S3. Spin-coating a s...

Embodiment 2

[0063] S1, spin-coating SnCl with a concentration of 0.1 mg / mL on the ITO surface 2 .2H 2 0 ethanol solution, spin coating conditions are 2000r, 30s. After spin coating is completed, annealed at 150°C for 30min and at 180°C for 60min.

[0064] S2, the type of perovskite active layer is (FAPbI 3 ) x (MAPbBr 3 ) 1-x , Dissolve the perovskite precursor in a mixed solution of DMF:DMSO=4:1, configure it into a 1.35M perovskite precursor solution, spin the perovskite precursor at a rotation speed of 6000r and a spin coating time of 40s Apply to the surface of the electron transport layer, and at the 20th second, drop 100uL of a 2mg / mL fullerene methylene derivative I in chlorobenzene (CB) solution. After the spin coating is finished, annealing is performed at 100°C for 60 minutes.

[0065] S3. Spiro-OMeTAD solution (doped with Li-TFSI and tBP) at a concentration of 80 mg / mL was spin-coated on the surface of the perovskite and oxidized in air for 24 hours.

[0066] S4. Evaporate 8nm silve...

Embodiment 3

[0069] S1, spin-coating SnCl with a concentration of 0.1 mg / mL on the ITO surface 2 .2H 2 0 ethanol solution, spin coating conditions are 2000r, 30s, and annealing at 150℃ for 30min, and annealing at 180℃ for 60min.

[0070] S2, the type of perovskite active layer is (FAPbI 3 ) x (MAPbBr 3 ) 1-x , Dissolve the perovskite precursor in a mixed solution of DMF:DMSO=4:1, configure it into a 1.35M perovskite precursor solution, and apply the perovskite to the spin-coating conditions with a rotation speed of 6000r and a spin coating time of 40s. The precursor was spin-coated on the surface of the electron transport layer, and 100 uL of chlorobenzene anti-solvent solution was added dropwise at the 20th second. After the spin coating is finished, annealing is performed at 100°C for 60 minutes.

[0071] 30 uL of chlorobenzene (CB) solution of fullerene methylene derivative I with a concentration of 0.3 mg / mL was spin-coated on the surface of the perovskite active layer under the spin coatin...

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Abstract

The invention discloses an application of a fullerene methylene derivative I in perovskite solar cells and a perovskite solar cell. The perovskite solar cell includes a conductive layer, an electron transport layer, a perovskite layer doped with the fullerene methylene derivative I, a hole transport layer and electrodes, which are arranged in sequence into a layered structure. The photovoltaic performance of the solar cell is improved by applying the fullerene methylene derivative I to the solar cell.

Description

Technical field [0001] The invention relates to the field of solar cells, in particular to the application of a fullerene methylene derivative I in a perovskite solar cell, a perovskite solar cell and a preparation method thereof. Background technique [0002] Since the organic-inorganic perovskite solar cell was first reported in 2009, its power conversion efficiency has grown from 3.8% to the current highest efficiency of 23.3% in just a few years, becoming a candidate to replace silicon solar cells. [0003] Perovskite solar cells have the advantages of low manufacturing cost, high photoelectric conversion efficiency, and solution processing. The rapid development of its photoelectric conversion efficiency in recent years is attributed to the development of the preparation of films with large crystal grains and smooth surfaces, as well as the development of efficient electron transport layers and hole transport layers. The structure of perovskite solar cells mainly includes a m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/46H01L51/42H01L51/44H01L51/48
CPCH10K85/215H10K30/00H10K30/88Y02E10/549
Inventor 谌宁陈康曹天天阳威
Owner SUZHOU UNIV
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