Self-assembly diffusion barrier layer copper inter-connection material and preparing method thereof

A technology of barrier layer and self-assembly, applied in metal material coating process, coating, ion implantation plating, etc., can solve problems such as circuit damage and interconnection material failure, and achieve less sample impurities, low high temperature stability, Eliminates the effect of increasing the size of copper interconnect structures

Inactive Publication Date: 2019-05-03
JIANGSU UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the temperature reaches about 200°C, Cu will enter the Si interface through diffusion channels such as grain boundaries and defects, and then react with Si to form copper-silicon compounds with extremely high resistivity, which will lead to failure of interconnect materials and circuit damage

Method used

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  • Self-assembly diffusion barrier layer copper inter-connection material and preparing method thereof
  • Self-assembly diffusion barrier layer copper inter-connection material and preparing method thereof
  • Self-assembly diffusion barrier layer copper inter-connection material and preparing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0022] A method for preparing a self-assembled diffusion barrier layer copper interconnection material, comprising the following steps:

[0023] (1) Will 3*3*1mm 3 The W sheet is pasted on the copper target through conductive adhesive, the conductive adhesive is completely covered by the W sheet, and the position of the W sheet is 1mm away from the center of the copper target;

[0024] (2) Use acetone, alcohol and deionized water to ultrasonically clean the (100) oriented single crystal silicon wafer for 10 minutes, then take out the silicon wafer and dry it with nitrogen;

[0025] (3) Put the copper target with the W sheet and the cleaned silicon chip into the vacuum chamber, the copper target with the W sheet on the bottom, the cleaned silicon chip on the top, and sputter coating upward;

[0026] (4) Close the vacuum chamber door, and use a mechanical pump to evacuate the chamber until the air pressure is lower than 5Pa;

[0027] (5) Turn off the mechanical pump and turn o...

Embodiment 2

[0032] A method for preparing a self-assembled diffusion barrier layer copper interconnection material, comprising the following steps:

[0033] (1) Will 5*5*2mm 3 The W sheet is pasted on the copper target through conductive adhesive, the conductive adhesive is completely covered by the W sheet, and the position where the W sheet is pasted is 20mm from the center of the copper target;

[0034] (2) Use acetone, alcohol and deionized water to ultrasonically clean the (100)-oriented monocrystalline silicon wafers for 15 minutes, respectively, for 3 times, and then take out the silicon wafers and dry them with nitrogen;

[0035] (3) Put the copper target with the W sheet and the cleaned silicon chip into the vacuum chamber, the copper target with the W sheet on the bottom, the cleaned silicon chip on the top, and sputter coating upward;

[0036] (4) Close the vacuum chamber door, and use a mechanical pump to evacuate the chamber until the air pressure is lower than 5Pa;

[0037...

Embodiment 3

[0042] A method for preparing a self-assembled diffusion barrier layer copper interconnection material, comprising the following steps:

[0043] (1) Will 4*4*1.5mm 3 The W sheet is pasted on the copper target through the conductive adhesive, the conductive adhesive is completely covered by the W sheet, and the position of the W sheet is 10mm away from the center of the copper target;

[0044] (2) Use acetone, alcohol and deionized water to ultrasonically clean the (100)-oriented single crystal silicon wafer for 13 minutes respectively, and the number of times of cleaning is 2 times, and then take out the silicon wafer and blow it dry with nitrogen;

[0045] (3) Put the copper target with the W sheet and the cleaned silicon chip into the vacuum chamber, the copper target with the W sheet on the bottom, the cleaned silicon chip on the top, and sputter coating upward;

[0046] (4) Close the vacuum chamber door, and use a mechanical pump to evacuate the chamber until the air pres...

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Abstract

The invention discloses a self-assembly diffusion barrier layer copper inter-connection material and a preparing method thereof, a heterogeneous structural layer of the material is in a manner of Cu(W)/Si, the atomic percentage of W ranges from 1 to 5at%, and the preparing method comprises the following steps that firstly, a W wafer is pasted on a copper target; secondly, a silicon wafer is subjected to ultrasonic cleaning, and the silicon wafer is taken out and is dried through nitrogen; thirdly, the copper target attached with the W wafer and the cleaned silicon wafer are put into a vacuum chamber, and upward sputter coating is carried out; fourthly, a vacuum cavity is closed, and the cavity is subjected to vacuum pumping until the air pressure is lower than 5 Pa; fifthly, a mechanical pump is closed, a molecular pump is opened, vacuum pumping is carried out, and argon is led in; sixthly, the work air pressure is adjusted to 0.8 to 1.2 Pa, and a sample is subjected to pre-sputtering;seventhly, a baffle is opened, and sputtering is carried out for 30 to 40 min; and eighthly, the sample is annealed and cooled and then is taken out, and the Cu(W)/Si inter-connection material is obtained. The prepared sample is little in impurity and high in purity, through the proper doping of W, the good diffusion blocking property and the good bonding property re achieved, and high temperature stability and low resistance rate are achieved.

Description

technical field [0001] The invention relates to a copper interconnection material and a preparation method thereof, in particular to a self-assembled diffusion barrier layer copper interconnection material and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of ultra-large-scale integrated circuits, the chip area has increased rapidly, the integration density has become denser, and the feature size of devices has begun to enter the deep nanoscale field. Since Al interconnection wires are likely to increase the interconnection delay time and current density of the circuit, causing electromigration and stress migration, which seriously reduces the reliability of the circuit, Al as an interconnection material has long ceased to meet market demand. Cu is gradually replacing Al as the main interconnect structure material in integrated circuits due to its lower impedance and better resistance to electromigration. However, whe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/16C23C14/58
Inventor 汪蕾李旭董松涛王琦李源梁朱熠霖
Owner JIANGSU UNIV OF SCI & TECH
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