Uniform doping method of SiC single crystal metal impurity

Abstract

The invention relates to a uniform doping method of SiC single crystal metal impurity, and belongs to the technical field of crystal growth. The method comprises: uniformly mixing SiC powder and a to-be-doped material, forming a polycrystalline SiC block uniformly doped with the metal by using high temperature and normal pressure heating in a constant temperature zone, cutting the polycrystallineSiC block into small volume cubes, uniformly mixing the small volume cubes and SiC powder, placing in a graphite crucible for PVT growth, carrying out single crystal growth, and obtaining the SiC having the predetermined doping concentration and uniformly doped with the metal impurity according to a conventional single crystal growth method, wherein the metal impurity in the polycrystalline SiC block can be gradually and uniformly released along with the decomposition of SiC in the PVT growth so as to achieve the purpose of uniform doping. According to the present invention, the method has characteristics of low requirements on SiC single crystal equipment, no requirement of modification, no introduction of other impurities and high repeatability.

Description

Technical field [0001] The invention relates to a method for uniformly doping SiC single crystal metal impurities, and belongs to the technical field of crystal growth. Background technique [0002] As a typical representative of the third-generation semiconductor materials, SiC is a relatively fast-developing semiconductor. The nature of the material determines the application field of the material. SiC material has excellent semiconductor properties such as large forbidden band width, high saturated electron velocity, high critical breakdown electric field strength, and high thermal conductivity. It is very suitable for preparing high-temperature, high-frequency, high-power semiconductor devices, and can be competent for semiconductors such as Si that cannot be used. field. Therefore, SiC has huge application potential in the fields of high temperature, high frequency, high power and radiation resistance. In the field of microelectronic devices, SiC-based P-i-N diodes, heter...

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Problems solved by technology

The method of built-in crucible also has certain disadvantages, that is, although the release of impurities is slowed down, there is still unevenness in the release process.

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