A method for uniform doping of sic single crystal metal impurities

A uniform doping, single crystal technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem of uneven release process, and achieve the effect of high repeatability and low equipment requirements

Active Publication Date: 2020-06-12
广州南砂晶圆半导体技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The method of built-in crucible also has certain disadvantages, that is, although the release of impurities is slowed down, there is still unevenness in the release process.

Method used

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  • A method for uniform doping of sic single crystal metal impurities
  • A method for uniform doping of sic single crystal metal impurities
  • A method for uniform doping of sic single crystal metal impurities

Examples

Experimental program
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Effect test

Embodiment 1

[0035] A method for uniform doping of SiC single crystal metal impurities, comprising steps as follows:

[0036] (1) The high-purity SiC powder and the material to be doped are uniformly mixed, the mixing method includes ball milling or stirring, and the solid solubility of the material to be doped in SiC is used as the maximum doping value of the material to be doped; The material to be doped is one or more of metal, oxide, carbide or silicide, so as not to introduce other impurities.

[0037] (2) After mixing, fill the high-purity sealed graphite crucible with the mixed powder, put it into a heating device with a temperature up to 2000°, and place it in a constant temperature zone; after closing the heating device, remove the growth after repeated pumping The remaining air in the cavity, especially the nitrogen and oxygen in the air, is fed with an inert gas such as argon as a background gas, and the pressure is maintained at normal pressure. Then heat up to 1800°C for 10 m...

Embodiment 2

[0041] A method for uniform doping of SiC single crystal metal impurities, the steps of which are as described in Example 1, the difference is that in step (2), after argon gas is introduced, the temperature is raised to 2500° C., and the heating time is 48 hours.

Embodiment 3

[0043] A method for uniform doping of SiC single crystal metal impurities, the steps of which are as described in Example 1, the difference is that in step (2), after heating up, keep warm for 48 hours and then cool down to normal temperature, the cooling rate is 50°C / min.

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Abstract

The invention relates to a uniform doping method of SiC single crystal metal impurity, and belongs to the technical field of crystal growth. The method comprises: uniformly mixing SiC powder and a to-be-doped material, forming a polycrystalline SiC block uniformly doped with the metal by using high temperature and normal pressure heating in a constant temperature zone, cutting the polycrystallineSiC block into small volume cubes, uniformly mixing the small volume cubes and SiC powder, placing in a graphite crucible for PVT growth, carrying out single crystal growth, and obtaining the SiC having the predetermined doping concentration and uniformly doped with the metal impurity according to a conventional single crystal growth method, wherein the metal impurity in the polycrystalline SiC block can be gradually and uniformly released along with the decomposition of SiC in the PVT growth so as to achieve the purpose of uniform doping. According to the present invention, the method has characteristics of low requirements on SiC single crystal equipment, no requirement of modification, no introduction of other impurities and high repeatability.

Description

technical field [0001] The invention relates to a method for uniform doping of SiC single crystal metal impurities, belonging to the technical field of crystal growth. Background technique [0002] As a typical representative of the third-generation semiconductor materials, SiC is a relatively rapidly developing semiconductor. The nature of the material determines the application field of the material. SiC materials have excellent semiconductor properties such as large band gap, high saturated electron velocity, high critical breakdown electric field strength, and high thermal conductivity. field. Therefore, SiC has great application potential in the fields of high temperature, high frequency, high power and radiation resistance. In the field of microelectronic devices, SiC-based P-i-N diodes, heterojunction bipolar transistors, high electron mobility transistors, etc. have been successfully developed, and are widely used in aerospace, radar communication, electric vehicl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B29/36
Inventor 徐南彭燕徐现刚陈秀芳于国建
Owner 广州南砂晶圆半导体技术有限公司
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