Trench etching technology and diode production method
A technology of processing technology and production method, which is applied in the field of trench etching processing technology and diode production, can solve the problems of cumbersome photolithography process steps, high production costs, and high requirements for lithography equipment, so as to save multiple processes, The effect of long pickling time and avoiding yellow light process
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[0055] A method for producing a diode, comprising the steps of:
[0056] (1) Silicon wafer cleaning: ultrasonic cleaning for 20 minutes, rinse with pure water, soak in hydrofluoric acid for 2 minutes, clean with pure water, and dry;
[0057] (2) Diffusion of phosphorus and boron: first expand phosphorus, the temperature of phosphorus expansion is 1200 ℃, and the time is 3 hours; then sandblasting; then expand boron, the temperature of boron expansion is 1260 ℃, the time is 24 hours;
[0058] (3) described trench etching process;
[0059] (4) RCA cleaning: Soak in hydrofluoric acid, flush with water, boil in No. 1 solution at 75°C for at least 6 minutes, flush with water, then boil in No. 2 solution at 75°C for 6 minutes, wash and dry ; Wherein: No. 1 solution is: 2500ml pure water, 500ml concentration is the mixed liquor of 32% hydrogen peroxide and 500ml concentration is the ammoniacal liquor of 26%; No. 2 solution is 2500ml pure water, 500ml concentration is that 32% hydrog...
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