Wide-spectrum nano-array detector and preparation method
A nanoarray and detector technology, applied in nanotechnology, nanotechnology, nanotechnology for sensing, etc., can solve the problems of low light energy utilization, limited visible light absorption, limitation, etc., to achieve simple structure and extended spectrum. Response range, highly responsive effect
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Embodiment 2
[0026] The wide-spectrum nanoarray detector of Example 2 is prepared through the following process: first, a ZnO thin film is prepared by magnetron sputtering on the surface of a silicon oxide substrate 1 with a thickness of 50 μm and a purity of 99.996%, and a target material with a purity of 99.99% metal Zn target, the background vacuum is 2×10 -4 Pa, the working gas is Ar and O 2 The mixed gas, the working pressure is 0.75Pa, the silicon oxide substrate temperature is 150°C, and the ZnO thin film with a thickness of 500nm is prepared. A perovskite film was prepared by spin-coating on the surface of the ZnO film, and 0.318g (0.002mol) CH 3 NH 3 I (purity 99.5%) and 0.924g (0.002mol) PbI 2 (purity 99%) was added to a small beaker containing 1 ml of N-dimethylformamide solution. CH is obtained after stirring3 NH 3 PB 3 Spin the coating solution, use the glue homogenizer to drop the perovskite solution on the substrate, place the solution on the glue baking machine to sol...
Embodiment 3
[0027] The broad-spectrum nanoarray detector of Example 3 is prepared through the following process: first, a ZnO film is prepared on the surface of a silicon oxide substrate 1 with a thickness of 50 μm and a purity of 99.996% by magnetron sputtering, and a target material with a purity of 99.99% metal Zn target, the background vacuum is 2×10 -4 Pa, the working gas is Ar and O 2 The mixed gas, the working pressure is 0.75Pa, the temperature of the silicon oxide substrate is 150°C, and the ZnO film with a thickness of 3000nm is prepared. A perovskite film was prepared by spin-coating on the surface of the ZnO film, and 0.318g (0.002mol) CH 3 NH 3 I (purity 99.5%) and 0.924g (0.002mol) PbI 2 (purity 99%) was added to a small beaker containing 1 ml of N-dimethylformamide solution. CH is obtained after stirring 3 NH 3 PB 3 Spin the coating solution, use the glue homogenizer to drop the perovskite solution on the substrate, and place the solution on the glue baking machine f...
Embodiment 4
[0028] The broad-spectrum nanoarray detector of Example 4 is prepared through the following process: first, a ZnO thin film is prepared by magnetron sputtering on the surface of a silicon oxide substrate 1 with a thickness of 20 μm and a purity of 99.996%, and a target material with a purity of 99.99% metal Zn target, the background vacuum is 2×10 -4 Pa, the working gas is Ar and O 2 The mixed gas, the working pressure is 0.75Pa, the temperature of the silicon oxide substrate is 150°C, and the ZnO film with a thickness of 100nm is prepared. A perovskite film was prepared by spin-coating on the surface of the ZnO film, and 0.318g (0.002mol) CH 3 NH 3 I (purity 99.5%) and 0.924g (0.002mol) PbI 2 (purity 99%) was added to a small beaker containing 1 ml of N-dimethylformamide solution. CH is obtained after stirring 3 NH 3 PB 3 Spin the coating solution, use the glue homogenizer to drop the perovskite solution on the substrate, place the solution on the glue baking machine f...
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