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Te-doped MXene material and manufacturing method thereof

A technology of dispersion liquid and dispersant, which is applied in the direction of electrical components, electrochemical generators, battery electrodes, etc., can solve the problems of increased cost and performance degradation, and achieve the effects of low cost, improved electrode conductivity, and favorable ion diffusion

Active Publication Date: 2019-05-31
WUYI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the existing battery industry, there are many methods or process steps for preparing batteries, which is easy to increase the cost, and if some process steps are simply omitted, the performance will decrease

Method used

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  • Te-doped MXene material and manufacturing method thereof
  • Te-doped MXene material and manufacturing method thereof
  • Te-doped MXene material and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] A preparation method of Te-doped MXene material, comprising the following steps:

[0032] (1) Take 50mg MXene (Ti 3 C 2 T x ) and 0.5 mg of biphenyl ditellurium were added to DMF, configured into a 1 mg / ml DMF dispersion, and magnetically stirred for 1 hour;

[0033] (2) Move the dispersion obtained in step (1) to a reactor with a capacity of 100ml, seal it, place it in an oven, keep it warm at 100°C for 10 hours, and cool to room temperature;

[0034] (3) After the product obtained in step (2) is washed 3 times with ultrapure water and absolute ethanol respectively, centrifuge for 5 minutes under the condition of 5000r / min with a centrifuge;

[0035] (4) Dry the centrifuged product obtained in step (3) in a vacuum drying oven at a drying temperature of 60° C. and a drying time of 8 hours.

[0036] Mix the Te-doped MXene material with the polyvinylidene fluoride binder and carbon black at a mass ratio of 8:1:1, add an appropriate amount of N-methylpyrrolidone, and s...

Embodiment 2

[0039] A preparation method of Te-doped MXene material, comprising the following steps:

[0040] (1) Take 1000mg MXene (Ti 2 CT x ) and 500 mg of biphenyl ditellurium were added to DMF, configured into a 50 mg / ml DMF dispersion, and magnetically stirred for 3 hours;

[0041](2) Move the dispersion obtained in step (1) to a reactor with a capacity of 50ml, seal it, place it in an oven, keep it warm at 150°C for 15 hours, and cool to room temperature;

[0042] (3) After the product obtained in step (2) is washed 3 times with ultrapure water and absolute ethanol respectively, centrifuge for 5 minutes under the condition of 5000r / min with a centrifuge;

[0043] (4) Dry the centrifuged product obtained in step (3) in a vacuum drying oven at a drying temperature of 60° C. and a drying time of 10 hours.

[0044] Mix the Te-doped MXene material with the polyvinylidene fluoride binder and carbon black at a mass ratio of 8:1:1, add an appropriate amount of N-methylpyrrolidone, and st...

Embodiment 3

[0047] A preparation method of Te-doped MXene material, comprising the following steps:

[0048] (1) Take 2000mg MXene (Ti 2 CT x ) and 2000 mg of biphenyl ditellurium were added to DMF, configured into a 100 mg / ml DMF dispersion, and magnetically stirred for 5 hours;

[0049] (2) Move the dispersion obtained in step (1) to a reactor with a capacity of 50ml, seal it, place it in an oven, keep it warm at 220°C for 24 hours, and cool to room temperature;

[0050] (3) After the product obtained in step (2) is washed 3 times with ultrapure water and absolute ethanol respectively, centrifuge for 5 minutes under the condition of 5000r / min with a centrifuge;

[0051] (4) Dry the centrifuged product obtained in step (3) in a vacuum drying oven at a drying temperature of 60° C. and a drying time of 12 hours.

[0052] Mix the Te-doped MXene material with the polyvinylidene fluoride binder and carbon black at a mass ratio of 8:1:1, add an appropriate amount of N-methylpyrrolidone, and...

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Abstract

The invention discloses a Te-doped MXene material and a manufacturing method thereof. The method comprises the following steps of (1) adding MXene and a Te source to a dispersing agent according to amass ratio of 1:0.01 to 1, preparing a dispersion liquid with a concentration of 1 to 100 mg / ml, and stirring 1-5 hours; (2) heating the dispersion liquid to 100 to 220 DEG C, reacting 10 to 24 hours,and then cooling to a room temperature; (3) cleaning a product obtained in the step (2) with a cleaning agent, and then centrifuging; and (4) carrying out vacuum drying on the centrifugal product obtained in the step (3) to obtain the Te-doped MXene material. Compared with an un-doped MXene material, by using a composite material manufactured in the invention, through Te doping, a space between MXene layers can be increased, and more electrochemical active sites are generated, which is good for ion diffusion; and electrode conductivity, a potassium storage capacity , and cycle stability are increased.

Description

technical field [0001] The invention belongs to the technical field of new energy, and in particular relates to a Te-doped MXene material and a preparation method thereof. Background technique [0002] MXene materials are a new family of two-dimensional metal carbides and carbonitrides, where M is a transition metal, A is group IIIA or IVA and X is C or N. Under the action of hydrofluoric acid, the A atom is corroded and removed, thereby forming a nanosheet material containing functional groups of hydroxyl, oxygen and fluorine and having an ultra-high specific surface area. The ultra-high specific surface area endows the material with more active sites and the contact area with the electrolyte, reducing the reaction kinetics, while a variety of chemical components and rich functional groups endow MXene with excellent hydrophilic surface and good electrical conductivity, thus It shows great application potential in the field of energy storage. [0003] Due to its unique str...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/36H01M4/583H01M4/62H01M10/054H01M4/136
CPCH01M10/054H01M4/36H01M4/136H01M4/62H01M4/583Y02E60/10
Inventor 张业龙孙宏阳徐晓丹张锦坤张弛汪达宋伟东郭月刘争陈梅温锦秀曾庆光彭章泉
Owner WUYI UNIV
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