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High-stability, low-dark-current fully inorganic perovskite photoelectric detector and preparation method thereof

A technology of photodetectors and inorganic calcium, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of inability to obtain high-quality crystal films, thick charge transport layer films, and increased recombination of photogenerated charges to achieve passivation and Effects of reducing intrinsic defects, improving transmission and collection efficiency, and improving quality

Active Publication Date: 2019-06-04
JINAN UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the one hand, this is due to the limitations of the preparation method of inorganic perovskite films, which cannot obtain high-quality crystalline films, and the thickness of the charge transport layer film is too thick and difficult to control; on the other hand, it is due to the device structure design, which leads to interface defects. State introduction, photogenerated charge recombination increases
The above reasons lead to the large dark current of most of the reported devices, insufficient detection sensitivity limit and low responsivity

Method used

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  • High-stability, low-dark-current fully inorganic perovskite photoelectric detector and preparation method thereof
  • High-stability, low-dark-current fully inorganic perovskite photoelectric detector and preparation method thereof
  • High-stability, low-dark-current fully inorganic perovskite photoelectric detector and preparation method thereof

Examples

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Effect test

Embodiment 1

[0049] (1) The commercial FTO was partially etched by the mixed reaction of dilute hydrochloric acid (HCl) and zinc powder (Zn), and then the substrate was ultrasonically cleaned in deionized water, acetone and isopropanol for 15 minutes each; The substrate was blown dry with nitrogen, and treated with ultraviolet ozone for 30 minutes.

[0050] (2) Deposit a layer of aluminum oxide film with a thickness of 1.5nm on the substrate treated by (1) by ALD technology (model: BENEQ, TFS200), the precursor source is trimethylaluminum (TMA), and the deposition conditions are: The chamber temperature was 85° C., the chamber pressure was 9 Pa, and the growth cycle was 16 times.

[0051] (3) Dissolve 0.33mol cesium bromide and 0.33mol lead bromide in 1mL dimethyl sulfoxide solution, heat and stir at 70°C for 12h to obtain CsPbBr 3 Precursor solution: Spin-coat the precursor solution on the aluminum oxide film, the spin-coating conditions are: spin-coating at 500rpm for 6 seconds, and spi...

Embodiment 2

[0056] 1. With reference to Example 1, only the thickness of the aluminum oxide thin film layer in step (2) is made into 1nm by ALD technology, wherein the growth cycle is 11 times, and other process parameters are the same as in Example 1 to obtain an all-inorganic perovskite photoelectric detector. The device has low dark current and high stability.

[0057] 2. With reference to Example 1, only the thickness of the aluminum oxide film layer in step (2) is made into 3nm by ALD technology, wherein the growth cycle is 32 times, and other process parameters are the same as in Example 1 to obtain an all-inorganic perovskite photoelectric detector. The device has low dark current and high stability.

[0058] 3. With reference to Example 1, only the thickness of the titanium oxide film layer in step (4) is made into 5nm by ALD technology, wherein the growth cycle is 86 times, and other process parameters are the same as in Example 1 to obtain an all-inorganic perovskite photoelec...

Embodiment 3

[0061] With reference to Example 1, only the commercial FTO in step (1) is changed into PET / ITO, and other process parameter conditions are the same as in Example 1 to obtain an all-inorganic perovskite photodetector, and its current-time curve is as follows Figure 9 shown.

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Abstract

The invention discloses a high-stability, low-dark-current fully-inorganic perovskite photoelectric detector and a preparation method thereof. The inverted-structure photoelectric detector comprises atransparent conductive positive electrode, an ultra-thin aluminum oxide layer, an fully-inorganic perovskite light absorbing layer, an electron transport layer and a metal negative electrode. The preparation method adopts ALD to deposit an ultra-thin aluminum oxide thin film and a titanium oxide thin film, the prepared device has low dark current and high stability, and the device still exhibitsgood photoelectric performance after being exposed to the air for more than 100 days. Through introducing the ultra-thin titanium oxide thin film to an interface between the perovskite and the metal electrode, the interface energy band matching is achieved, the response speed of the device is accelerated, and the sensitivity of the device is improved. The preparation method disclosed by the invention is suitable for manufacturing flexible detectors, and provides an effective, feasible and low-cost scheme for realizing the industrialization of inorganic perovskite photoelectric detectors and flexible devices thereof.

Description

technical field [0001] The invention belongs to the technical field of novel all-inorganic semiconductor photoelectric detection preparation, and in particular relates to a high-stability, low-dark-current all-inorganic perovskite photodetector and a preparation method thereof. Background technique [0002] Organic / inorganic hybrid metal halide perovskites (the general chemical formula is ABX 3 ) has excellent photoelectric properties such as long carrier diffusion distance, high carrier mobility, large light absorption coefficient, and long exciton diffusion distance, and is widely used in optoelectronic applications; such as solar cells, photodetectors, light emitting Diode, quantum dot display and other fields. In recent years, thanks to the suitable band gap and high absorption coefficient of perovskite cells, organic / inorganic hybrid perovskite materials are considered to be the most suitable optoelectronic materials for building high-performance detectors. In 2014, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216
CPCY02P70/50
Inventor 赵传熙麦文杰岑国标
Owner JINAN UNIVERSITY
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