Preparation method of hydrophobic oleophylic material
A technology of hydrophobic and lipophilic and vacuum equipment is applied in the field of preparation of hydrophobic and lipophilic materials to achieve the effects of easy industrialization and mass production, strong repeatability and fast separation speed.
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Embodiment 1
[0058] 1S: Ultrasonic cleaning of the porous copper mesh, the thickness of the porous copper mesh is 2mm, and the mesh number of the copper mesh is 600 mesh;
[0059] 2S: Preparation of copper oxide nanowires by high-temperature oxidation using vacuum equipment;
[0060] The vacuum chamber is heated to 600°C through armor, the gas in the vacuum chamber is oxygen and inert gas, the pressure is 50Pa, the partial pressure ratio of oxygen and inert gas is 3; the length of the prepared copper oxide nanowire is 50 μm, and the density is 20 / μm 2 ;
[0061] 3S: Ion implantation on the surface of nanowires using a metal ion source;
[0062] The ion beam current of the metal ion source is 0.1mA, the pulse width is 100μs, the implanted metal is Ag, the implantation energy is 3KeV, and the dose is 1×10 15 / cm 2 ;
[0063] 4S: Coating copper oxide nanowires using magnetic filtration deposition technology.
[0064] The metal is Ag, the arcing current is set to 50-100A, the oxygen flow ...
Embodiment 2
[0067] 1S: Ultrasonic cleaning of the porous copper mesh, the thickness of the porous copper mesh is 2mm, and the mesh number of the copper mesh is 800 mesh;
[0068] 2S: Preparation of copper oxide nanowires by high-temperature oxidation using vacuum equipment;
[0069] The vacuum chamber is heated to 600°C through armor, the gas in the vacuum chamber is oxygen and inert gas, the pressure is 50Pa, the partial pressure ratio of oxygen and inert gas is 3; the length of the prepared copper oxide nanowire is 50 μm, and the density is 20 / μm 2 ;
[0070] 3S: Ion implantation on the surface of nanowires using a metal ion source;
[0071] The ion beam current of the metal ion source is 0.1mA, the pulse width is 100μs, the implanted metal is Ag, the implantation energy is 3KeV, and the dose is 1×10 15 / cm 2 ;
[0072] 4S: Coating copper oxide nanowires using magnetic filtration deposition technology.
[0073] The metal is Ag, the arc starting current is set to 80A, the oxygen flo...
Embodiment 3
[0076] 1S: Ultrasonic cleaning of the porous copper mesh, the thickness of the porous copper mesh is 2mm, and the mesh number of the copper mesh is 900 mesh;
[0077] 2S: Preparation of copper oxide nanowires by high-temperature oxidation using vacuum equipment;
[0078] The vacuum chamber is heated to 700°C through armor, the gas in the vacuum chamber is oxygen and inert gas, the pressure is 50Pa, the partial pressure ratio of oxygen and inert gas is 3; the length of the prepared copper oxide nanowire is 50 μm, and the density is 30 / μm 2 ;
[0079] 3S: Ion implantation on the surface of nanowires using a metal ion source;
[0080] The ion beam current of the metal ion source is 0.1mA, the pulse width is 100μs, the implanted metal is Ag, the implantation energy is 3KeV, and the dose is 1×10 15 / cm 2 ;
[0081] 4S: Coating copper oxide nanowires using magnetic filtration deposition technology.
[0082] The metal is Ag, the arc starting current is set to 80A, the oxygen flo...
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