Manufacturing method of SiC substrate

Abstract

The invention discloses a manufacturing method of a SiC substrate, and relates to the technical field of manufacturing of the SiC substrate. The method comprises steps as follows: S1, SiC powder is prepared and taken as a raw material; S2, the SiC powder raw material in S1 is placed in a crucible, seed crystals consisting of SiC monocrystals are mounted in a cover body of the crucible, recrystallization is performed through sublimation of the raw material, the SiC monocrystals are enabled to grow on the seed crystals, and approximately cylindrical SiC bulk monocrystals are obtained; S3, the to-be-cut SiC bulk monocrystals are mounted on a working table. According to the manufacturing method of the SiC substrate, a diamond cutting wire is adopted for cutting, mortar spraying is performed during cutting, the large-diameter SiC monocrystals can be cut, the SiC substrate obtained after cutting has a flat surface, multiple SiC bulk monocrystals can be cut each time, and manufacturing quality of the SiC substrate is improved; during manufacturing of the SiC bulk monocrystals, sublimation speed of the SiC powder is high, so that the growth rate of the SiC monocrystals on the seed crystalsis high, manufacturing efficiency of the SiC monocrystals is improved, and the production cost is reduced.

Description

technical field [0001] The invention relates to the technical field of making SiC substrates, in particular to a method for manufacturing SiC substrates. Background technique [0002] Silicon carbide, also known as moissanite, corundum or refractory sand, chemical formula: SiC, is a refractory material made of quartz sand, petroleum coke or coal coke, and wood chips through high-temperature smelting in a resistance furnace. Silicon carbide Rare minerals also exist in nature. Among contemporary non-oxide high-tech refractory materials such as C, N, and B, silicon carbide is used as an abrasive because of its stable chemical properties, high thermal conductivity, small thermal expansion coefficient, and good wear resistance. Besides, there are many other uses. Silicon carbide is the most widely used and economical one. The industrially produced silicon carbide in China is divided into black silicon carbide and green silicon carbide, both of which are hexagonal crystals with a ...

AI Technical Summary

Problems solved by technology

[0005] Aiming at the deficiencies of the prior art, the present invention provides a method for manufacturing a SiC substrate, which solves the problem that the existing SiC substrate manufacturing method is difficult to cut a large-diameter SiC single crystal, and the surface of the cut SiC substrate is uneven, The production quality of SiC substrate is greatly reduced, the production efficiency of silicon carbide single crystal is low, and the production cost is high