Gallium nitride-based light-emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention discloses a gallium nitride-based light emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. The gallium nitride-basedlight emitting diode epitaxial wafer comprises a substrate, and a low-temperature buffer layer, a three-dimensional nucleating layer, a two-dimensional recovery layer, an undoped GaN layer, an N-typelayer, a multi-quantum well layer, an electron blocking layer and a P-type layer which grow on the substrate in sequence, wherein the low-temperature buffer layer and the three-dimensional nucleatinglayer are both beryllium-doped GaN layers, the doping concentration of beryllium in the low-temperature buffer layer is gradually increased in the stacking direction of the epitaxial wafer, and the doping concentration of beryllium in the three-dimensional nucleating layer is gradually reduced in the stacking direction of the epitaxial wafer. The gallium nitride-based light emitting diode epitaxial wafer provided by the invention can improve the bottom crystal quality of the epitaxial layer, thereby improving the crystal quality of the epitaxial layer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlights, etc. [0003] The epitaxial wafer is the main component of the LED. The existing GaN-based LED epitaxial wafer includes a substrate, a low-temperature buffer layer, a three-dimensional nucleation layer, a two-dimensional recovery layer, and an undoped GaN layer stacked on the substrate in sequence. , N-type layer, multiple quantum well layer, electron blocking layer and P-type layer. Due to the large difference ...

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Problems solved by technology

[0005] The crystal quality of the buffer layer grown in a low temperature environment is poor, which will make the crystal quality of the three-dimensional nucleation layer grown on it poor, resulting in more dislocation density, resulting in a decrease in the crystal quality of the bottom layer of the epitaxial layer, which is difficult to obtain later. The epitaxial layer with better crystal quality seriously affects the quality of LED

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