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High-thermal-conductivity silicon nitride ceramic substrate and preparation method thereof

A technology of silicon nitride ceramics and ceramic substrates, applied in the field of high thermal conductivity silicon nitride ceramic substrates and its preparation, to achieve the effects of fast drying speed, high thermal conductivity, and reduced harm to the human body

Active Publication Date: 2019-07-09
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Secondly, most of the organic solvents used in the current organic solvent tape casting process are organic solvents with certain toxicity, such as toluene, acetone and various toxic solvents

Method used

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  • High-thermal-conductivity silicon nitride ceramic substrate and preparation method thereof
  • High-thermal-conductivity silicon nitride ceramic substrate and preparation method thereof
  • High-thermal-conductivity silicon nitride ceramic substrate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Preparation of green body: silicon nitride powder (d50=0.8 μm, the phase composition of silicon nitride powder is α-Si 3 N 4 ), the sintering aid is dissolved in an organic solvent, and the composition of the sintering aid is MgSiN 2 and Y 2 o 3 The mass ratio of the two is 1.5:1, and the mass of the sintering aid accounts for 8% of the sum of the mass of the silicon nitride powder and the sintering aid; the organic solvent accounts for the sum of the mass of the silicon nitride powder and the sintering aid respectively The mixed solvent of 20% dehydrated alcohol, 20% methyl acetate, 30% butyl acetate; Then add dispersant and use silicon nitride ball as grinding medium, ball mill ball mill for 22 hours for the first time, dispersant is mass % The sum of silicon nitride powder and sintering aid mass is 1.5% castor oil;

[0058] Then add binder 1 and plasticizer for the second ball milling for 22 hours. The binder 1 is 4% polyvinyl butyral and 8% polypropylene by mass...

Embodiment 2

[0068] Preparation of biscuit:

[0069] Weigh the silicon nitride powder according to the proportion (d50=0.8μm, the phase composition of the silicon nitride powder is α-Si 3 N 4 ) and sintering aids and dissolved in organic solvents, the composition of sintering aids is MgO+Y 2 o 3 +CeO 2 The mass ratio of the three is 1:1:1, and the mass of sintering aid accounts for 6% of the sum of the mass of silicon nitride powder and sintering aid; the organic solvent accounts for 6% of the mass of silicon nitride powder and sintering aid respectively. A mixed solvent of 25% absolute ethanol, 20% methyl acetate, and 20% ethyl acetate;

[0070] Then add dispersant and use silicon nitride balls as grinding medium, ball mill for 24 hours for the first time, dispersant is castor oil whose quality accounts for the sum of silicon nitride powder and sintering aid quality 1.2%;

[0071] Then add binder 1 and plasticizer for the second ball milling for 24 hours. Binder 1 is 3% polyvinyl but...

Embodiment 3

[0081] Preparation of biscuit:

[0082] Weigh the silicon nitride powder according to the proportion (d50=0.8μm, the phase composition of the silicon nitride powder is α-Si 3 N 4 ) and a sintering aid and dissolved in an organic solvent, the composition of the sintering aid is MgO+Y 2 o 3 +CeO 2 The mass ratio of the three is 2:1:1, and the mass of sintering aid accounts for 8% of the sum of the mass of silicon nitride powder and sintering aid; the organic solvent accounts for 8% of the mass of silicon nitride powder and sintering aid respectively. The mixed solvent of the absolute ethanol of sum 22%, the propyl acetate of 17%, the butyl acetate of 29%;

[0083] Then add dispersant and use silicon nitride balls as grinding medium, ball mill ball mill for 26 hours for the first time, dispersant is castor oil whose quality accounts for the sum of silicon nitride powder and sintering aid quality 1.4%;

[0084] Then add binder 1 and plasticizer for the second ball milling for...

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Abstract

The invention belongs to the technical field of high-thermal-conductivity silicon nitride ceramic substrates, and particularly relates to a high-thermal-conductivity silicon nitride ceramic substrateand a preparation method thereof. The high-thermal-conductivity silicon nitride ceramic substrate is formed by stacking a plurality of silicon nitride tape casting biscuits layer by layer, a middle layer is arranged between every two adjacent silicon nitride tape casting biscuits, each middle layer is composed of two graphite plates and two graphite strips which are located between two ends of thetwo graphite plates respectively to form a cavity, the graphite plates are provided with a plurality of holes communicating with the cavities, and slurry separation layers are arranged between the graphite plates and the corresponding silicon nitride tape casting biscuits. The silicon nitride ceramic substrate prepared by the preparation method disclosed by the invention is relatively good in purity and performance, and particularly has relatively high heat conductivity and excellent mechanical properties.

Description

technical field [0001] The invention belongs to the technical field of silicon nitride ceramic substrates with high thermal conductivity, and in particular relates to a silicon nitride ceramic substrate with high thermal conductivity and a preparation method thereof. Background technique [0002] In recent years, the miniaturization of electronic components and the rapid development of large-scale integrated circuits have put forward higher requirements for the ceramic insulating substrates used. In some specific fields, ceramic insulating substrates are not only required to have high thermal conductivity, but also have sufficient strength and toughness. [0003] At present, the types of ceramic substrates that are mature and widely used in the industry include Al 2 o 3 and AlN ceramics. However, each of these two ceramic substrate materials has its own disadvantages. Al 2 o 3 The disadvantages of ceramic substrates are their low thermal conductivity, high dielectric c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/587C04B35/622C04B35/638C04B35/64C04B37/00
CPCC04B35/587C04B35/622C04B35/638C04B35/64C04B37/005C04B2235/3206C04B2235/3224C04B2235/3225C04B2235/3227C04B2235/3229C04B2235/3852C04B2235/3873C04B2235/3878C04B2235/5445C04B2235/6562C04B2235/6567C04B2235/658C04B2235/96C04B2235/9607C04B2237/08C04B2237/363C04B2237/368
Inventor 谢志鹏肖志才胡丰肖毅刘剑侯庆冬
Owner TSINGHUA UNIV
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