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Controllable preparation method of matchstick-type nanometer indium oxide

A nano-indium oxide, rod-type technology, applied in chemical instruments and methods, nanotechnology, nanotechnology, etc., can solve the problems of inability to control the diameter of nanowires, expensive materials, and inability to control the diameter and length of nanowire growth, etc. Achieve uniform morphology, good crystallinity and short length.

Active Publication Date: 2019-07-12
JILIN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Meng, Ming et al. (ACS APPLIEDMATERIALS&INTERFACES, 2014,6,6:4081-4088) synthesized indium oxide nanowires by chemical vapor deposition, which has good applications in the field of optoelectronics, but this experimental operation has no way to control the growth The diameter of the nanowire and the materials used in the experiment are relatively expensive; Nandan, Singh et al. (NANOTECHNOLOGY, 2009, 20, 19: 195605) synthesized indium oxide nanowires at 875 ° C, but this experiment cannot control the nanowires Growth diameter and length

Method used

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  • Controllable preparation method of matchstick-type nanometer indium oxide
  • Controllable preparation method of matchstick-type nanometer indium oxide
  • Controllable preparation method of matchstick-type nanometer indium oxide

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Experimental program
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Embodiment 1

[0022] Sonicate the reaction substrate silicon wafer in acetone, alcohol, and deionized water for 20 minutes in sequence, and dry it with high-purity nitrogen to obtain a pure silicon wafer. The reaction substrate is dipped in a 6nm gold particle solution with uniform particle size on the coating pulling machine, and a certain pulling speed is maintained. Place the gold-plated side up in the quartz boat, and place the quartz boat inside a large test tube with a diameter of 3.5 cm and a length of 30 cm. The distance between the quartz boat and the mouth of the large test tube is 5 cm. Place another quartz boat containing the indium powder of the reaction source inside another large test tube of the same size. Place the two test tubes facing each other with a distance of 10 cm. The test tube with indium powder is located in the center of the first temperature zone, and the large test tube with gold-plated silicon wafer is located in the center of the second temperature zone. At...

Embodiment 2

[0024] Sonicate the reaction base silicon wafer in acetone, alcohol, and deionized water for 20 minutes respectively, and dry it with high-purity nitrogen to obtain a pure silicon wafer. The reaction substrate is dipped in a solution of 9nm gold particles with uniform particle size on the coating pulling machine, and a certain pulling speed is maintained. The gold-plated silicon wafer and indium powder were placed as in Example 1, and the same experimental conditions were used. After the reaction, pure matchstick-type nano-indium oxide is obtained on the reaction substrate.

[0025] We conducted an X-ray diffraction (XRD) test on the obtained sample, and found that the obtained sample was pure indium oxide. Figure 5 It is an EDS surface scan test on the sample. It can be seen from the spectrum that the sample is composed of pure indium oxide, and the EDS of the matchstick nano-indium oxide head shows that the reaction is due to the catalysis of gold. Combined with the relev...

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Abstract

The invention adopts an experiment method of chemical vapor deposition, discloses a controllable preparation method of a matchstick-type nanometer indium oxide, and relates to the field of preparationof nanometer materials. The experiment method comprises the steps that indium powder as a reaction source is placed at a first temperature area of a dual-temperature area tube furnace, and a siliconslice dipped in gold nanoparticles with the uniform size is placed at a second temperature area; when an experiment begins, the tube furnace is vacuumized, argon is introduced into the tube furnace, when the temperature is increased to 950 DEG C, oxygen is introduced, after the experiment is finished, oxygen introduction is stopped, argon is introduced, after the tube furnace is cooled to the indoor temperature, argon introduction is stopped, and a sample is taken out. The experiment method is simple and controllable, matchstick-type nanometer indium oxides of different sizes are prepared, thehead diameter of the matchstick-type nanometer indium oxide is in a range of 20-70 microns, the body diameter of the matchstick-type nanometer indium oxide is in a range of 25-70 microns, and the matchstick length is in a range of 50-400 microns.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a chemical vapor deposition method and an experimental method for controllably preparing matchstick-type nano-indium oxide by using nano-gold particles with uniform particle size. Background technique [0002] Indium oxide nanomaterials refer to a class of materials in which at least one dimension of the material in the three-dimensional space is at the nanometer level (1nm-100nm). Compared with traditional bulk materials, indium oxide nanomaterials have more excellent properties and are applied in nanomagnetic materials, nanosensors, nanosemiconductor materials, etc. One-dimensional indium oxide nanomaterials have attracted extensive attention due to their good gas-sensing properties and field emission properties. One-dimensional indium oxide nanomaterials mainly include nanowires, nanorods, nanofibers, and nanotubes. In one-dimensional indium oxide nanomateria...

Claims

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Application Information

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IPC IPC(8): C01G15/00B82Y30/00B82Y40/00B01J23/52
CPCC01G15/00B82Y30/00B82Y40/00B01J23/52C01P2002/72C01P2004/03C01P2002/85C01P2004/04C01P2004/64B01J35/23
Inventor 高伟彭钰佳殷红
Owner JILIN UNIV
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