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Aluminum paste material for crystalline silicon photovoltaic cell and preparation method

A photovoltaic cell, crystalline silicon technology, applied in photovoltaic power generation, conductive materials dispersed in non-conductive inorganic materials, cable/conductor manufacturing, etc. problem, to achieve the effect of easy printing and good continuity

Active Publication Date: 2019-07-19
博兴兴业精细化工产业发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Aiming at the deficiencies of the prior art, the present invention provides an aluminum paste material for crystalline silicon photovoltaic cells and a preparation method thereof, which solves the problem of the current aluminum paste materials for crystalline silicon photovoltaic cells in the process of preparing aluminum powder into aluminum paste. The added organic components escape gas during the sintering process, causing printing stripes and cracks, which cannot ensure the stable conductivity of the aluminum electrode on the back of the battery.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The preparation method of aluminum paste material for crystalline silicon photovoltaic cell comprises the following steps:

[0034] (1) Dissolve 375g of aluminum nitrate nonahydrate in distilled water, add 100mL of ammonia water with a mass fraction of 10%, set the volume to 1L, keep constant temperature at 60°C, and prepare solution A; weigh 2g of sodium hydroxide and dissolve in 1L of distilled water to prepare solution B;

[0035] (2) solution B is joined in the reactor that stirrer and heating device are housed, keep constant temperature at temperature 60 ℃, under the stirring that rotating speed is 120rpm, first add 260g massfraction and be 10% hydroxylamine hydrochloride solution, then Add 1g of succinic acid, turn to 300rpm and stir for 1h, while maintaining a constant temperature at 60°C;

[0036] (3) The reactor in step (2) is kept at a constant temperature at a temperature of 60° C., and under stirring at a speed of 120 rpm, solution A is added to the reactor...

Embodiment 2

[0044] The preparation method of aluminum paste material for crystalline silicon photovoltaic cell comprises the following steps:

[0045] (1) Dissolve 400g of aluminum nitrate nonahydrate in distilled water, add 100mL of ammonia water with a mass fraction of 10%, set the volume to 1L, keep constant temperature at 80°C, and prepare solution A; weigh 4g of sodium hydroxide and dissolve in 1L of distilled water to prepare solution B;

[0046] (2) solution B is joined in the reactor that stirrer and heating device are housed, keep constant temperature at 80 ℃ of temperature, under the stirring of 300rpm at rotating speed, first add 300g massfraction and be 10% hydroxylamine hydrochloride solution, then Add 3g of succinic acid, turn to 500rpm and stir for 3h, while maintaining a constant temperature at 80°C;

[0047] (3) The reactor in step (2) is kept at a constant temperature at a temperature of 80° C., and under stirring at a speed of 300 rpm, solution A is added to the reacto...

Embodiment 3

[0055] The preparation method of aluminum paste material for crystalline silicon photovoltaic cell comprises the following steps:

[0056] (1) Dissolve 390g of aluminum nitrate nonahydrate in distilled water, add 100mL of ammonia water with a mass fraction of 10%, set the volume to 1L, keep constant temperature at 70°C, and prepare solution A; weigh 3g of sodium hydroxide and dissolve in 1L of distilled water to prepare solution B;

[0057] (2) solution B is joined in the reactor that stirrer and heating device are housed, keep constant temperature at 70 ℃ of temperature, under the stirring of 180rpm at rotating speed, add 280g massfraction earlier and be the hydroxylamine hydrochloride solution of 10%, then Add 2g of succinic acid, turn to 400rpm and stir for 2h, while maintaining a constant temperature at 70°C;

[0058] (3) The reactor in step (2) is kept at a constant temperature at a temperature of 70° C., and under stirring at a speed of 240 rpm, solution A is added to t...

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Abstract

The invention relates to the technical field of crystalline silicon photovoltaic cell preparation, and discloses a preparation method of an aluminum paste material for a crystalline silicon photovoltaic cell, wherein the aluminum paste material comprises the following raw materials in parts by weight: 20-27 parts of aluminum powder, 10-15 parts of glass powder composed of PbO, SiO2, TiO2, B2O3 andMgO, 15-25 parts of a high-modulus potassium silicate solution, 1-3 parts of a dispersing agent and 2-3 parts of an anti-settling agent; and the aluminum powder and the uniformly-dispersed glass powder binding phase are added into an inorganic carrier solvent high-modulus potassium silicate solution, under the combined action of the inorganic dispersing agent and the inorganic anti-settling agent, the aluminum powder is uniformly dispersed in the slurry to prepare the aluminum paste material for the crystalline silicon photovoltaic cell. According to the method, the technical problem that stable electric conduction of an aluminum electrode on the back surface of the battery cannot be ensured caused by printed stripe cracks due to gas escaped in the sintering process of the added organic components when the aluminum powder is prepared into the aluminum paste of the current aluminum paste material for the crystalline silicon photovoltaic cell can be solved.

Description

technical field [0001] The invention relates to the technical field of preparation of crystalline silicon photovoltaic cells, in particular to an aluminum paste material for crystalline silicon photovoltaic cells and a preparation method thereof. Background technique [0002] When manufacturing crystalline silicon solar cells, the aluminum paste is printed on the back of the silicon wafer with a screen, and after drying, sintering, cooling and other processes, the silicon-aluminum alloy formed during the sintering process can effectively eliminate the gap between the silicon wafer and the electrode. The Schottky barrier achieves good ohmic contact, and an aluminum-doped silicon epitaxial growth layer is formed on the cooled silicon wafer, that is, the back electric field, which can effectively increase the open circuit voltage of the battery and achieve high photoelectric conversion efficiency. Among them, the high or low photoelectric conversion efficiency of crystalline si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/16H01B1/18H01B13/00H01L31/0224
CPCH01B1/16H01B1/18H01B13/00H01L31/022441Y02E10/50
Inventor 应炎冲
Owner 博兴兴业精细化工产业发展有限公司