N type boron carbon nitrogen film/P type single crystal silicon heresy PN native device and preparation method

Abstract

The invention provides an n-type boron carbon nitride thin film / p-type single-crystal heterojunction pn-junction prototype device and a fabrication method thereof, and belongs to the field of semiconductor materials. The fabrication method comprises the steps of fabricating an n-type boron carbon nitride thin film on a p-type (100) surface single-crystal silicon substrate by a magnetron sputteringmethod; and respectively fabricating silver electrodes at one side of the n-type boron carbon nitride thin film and at one side of the p-type single-crystal silicon, thereby obtaining the n-type boron carbon nitride thin film / p-type single-crystal heterojunction pn-junction prototype device. By controlling a growth parameter of magnetic sputtering, the n-type boron carbon nitride conductive layercomprising a columnar boron carbon nitride nanocrystal is obtained, and the orientation of nanocrystal is controllable; and the n-type boron carbon nitride thin film / p-type single-crystal heterojunction pn-junction prototype device having favorable rectification characteristic is obtained.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to an n-type boron-carbon-nitrogen thin film / p-type single crystal silicon heterogeneous pn junction device containing highly oriented hexagonal boron nitride nanocrystals and a preparation method. Background technique [0002] The pn junction is the basis of various semiconductor devices. At present, the application of silicon-based semiconductors and compound semiconductors represented by gallium arsenide is very mature. However, with the development of science and technology, the existing semiconductor materials can no longer meet the needs of some fields. Demand, especially in some military and aerospace applications in extreme environments such as high temperature and high pressure, therefore, the development of new semiconductor materials with excellent performance is urgent. [0003] Boron carbon nitrogen has low density, adjustable band gap, low stress, oxidation resis...

AI Technical Summary

Problems solved by technology

At present, many synthesis methods of boron, carbon and nitrogen cannot determine the composition of boron, carbon and nitrogen, which leads to uncertainty in the structure of boron, carbon and nitrogen films, and hinders the further application of boron, carbon and nitrogen materials.

At the same time, boron carbon nitrogen films are very prone to phase separation of boron nitride and carbon under certain conditions, which makes the synthesis of boron carbon nitrogen compounds very difficult, limiting the research on the properties of boron carbon nitrogen films and the development of applications

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