Nitrogen-doped silicon oxide negative electrode material as well as preparation method and application thereof

A technology of silicon oxide and negative electrode materials, which is applied in the direction of battery electrodes, electrochemical generators, electrical components, etc., can solve the problems of low initial charge and discharge efficiency, poor cycle life, etc., and achieve structural stability and high capacity retention. Effects of small negative electrode resistance, improved structural stability and capacity retention

Active Publication Date: 2019-07-30
桂林麦克斯新能源科技有限公司
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Problems solved by technology

[0005] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, and provide a nitrogen-doped silicon oxide negative electrode material and its preparation method, so as to solve the problem of low initial charge and discharge efficiency and poor cycle life of the existing silicon oxide as the negative electrode material question
[0006] Another object of the present invention is to provide a negative electrode and a lithium ion battery to solve the technical problems of low initial charge and discharge efficiency and poor cycle life in existing lithium ion batteries containing silicon oxide negative electrode materials

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  • Nitrogen-doped silicon oxide negative electrode material as well as preparation method and application thereof
  • Nitrogen-doped silicon oxide negative electrode material as well as preparation method and application thereof
  • Nitrogen-doped silicon oxide negative electrode material as well as preparation method and application thereof

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[0021] On the one hand, an embodiment of the present invention provides a method for preparing a nitrogen-doped silicon oxide negative electrode material. The preparation method of the nitrogen-doped silicon oxide negative electrode material comprises the following steps:

[0022] Step S01. Preparing pre-nitrided silicon dioxide powder and pre-nitrided silicon powder: performing a first gradient sintering reduction treatment on the silicon powder and silicon dioxide powder in a first reducing atmosphere containing a nitrogen source, Obtain pre-nitrided silicon dioxide powder and pre-nitrided silicon powder;

[0023] Step S02. Prepare a mixed powder containing pre-nitrided silicon dioxide powder and pre-nitrided silicon powder: combine the pre-nitrided silicon dioxide powder, pre-nitrided silicon powder and organic nitrogen The source is mixed and ball milled to obtain a mixed powder;

[0024] Step S03. Perform gradient sintering reduction treatment on the mixed powder: perfo...

Embodiment 1

[0045] Embodiment 1 provides a nitrogen-doped silicon oxide negative electrode material and a preparation method thereof. The nitrogen-doped silicon oxide negative electrode material is prepared according to a method comprising the following steps:

[0046] S11: Put the nano-scale silicon powder and silicon dioxide powder into the tube furnace respectively, and then pass it into the argon atmosphere with a gas flow rate of 120 sccm; raise the temperature to 400°C at a rate of 8°C per minute, and then put the argon gas into the furnace. The atmosphere was switched to ammonia atmosphere, the gas flow rate was 100 sccm; the temperature was raised to 600°C at a rate of 5°C per minute, and then to 750°C at a rate of 3°C per minute, kept for 1 hour, then switched to an argon atmosphere, and then cool down;

[0047] S12: Mix and grind the pre-nitrided silica powder and silicon powder obtained in step S11 at a molar ratio of 1:1, and add the mass of the pre-nitrided silica powder aft...

Embodiment 2

[0050] Embodiment 1 provides a nitrogen-doped silicon oxide negative electrode material and a preparation method thereof. The nitrogen-doped silicon oxide negative electrode material is prepared according to a method comprising the following steps:

[0051] S11: Put the nano-scale silicon powder and silicon dioxide powder into the tube furnace respectively, and then pass it into the argon atmosphere with a gas flow rate of 120 sccm; raise the temperature to 400°C at a rate of 8°C per minute, and then put the argon gas into the furnace. The atmosphere is switched to ammonia atmosphere, the gas flow rate is 100sccm; the temperature is raised to 600°C at a rate of 5°C per minute, and then to 750°C at a rate of 3°C per minute, kept for 1 hour, then switched to an argon atmosphere, and then cool down;

[0052] S12: Mix and grind the pre-nitrided silicon dioxide powder and silicon powder obtained in step S11 according to a molar ratio of 0.9:1, and add the mass of the pre-nitrided ...

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Abstract

The invention provides a nitrogen-doped silicon oxide negative electrode material as well as a preparation method and an application thereof. The preparation method of the nitrogen-doped silicon oxidenegative electrode material comprises the following steps of preparing a pre-nitrided silicon dioxide powder and pre-nitrided silicon powder; preparing doped mixed powder containing the pre-nitridedsilicon dioxide powder and the pre-nitrided silicon powder; and performing gradient sintering and reduction treatment on the doped mixed powder. The nitrogen-doped silicon oxide negative electrode material prepared by the preparation method of the invention has a high electronic conductivity network, so that the lithium ion conduction rate is improved, the conductivity of the silicon-based negative electrode material is improved, and the structural stability and the capacity retention rate are improved.

Description

technical field [0001] The invention belongs to the technical field of chemical power sources, and in particular relates to a nitrogen-doped silicon oxide negative electrode material and a preparation method and application thereof. Background technique [0002] Lithium-ion batteries have been widely used as a portable new energy source in many electronic product fields due to their safety, long service life, and portability. At present, the key research direction of anode materials for lithium-ion batteries is developing towards lithium-type battery materials with high specific capacity, high rate, high cycle performance and high safety performance. [0003] Silicon has an ultra-high theoretical capacity (4200mAh / g) and a low delithiation potential (<0.5v), but the negative electrode material of silicon has serious reasons for volume expansion. In the process of completely intercalating lithium, the volume expansion rate It can reach 300%, which will not only affect the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/36H01M4/485H01M4/131H01M10/0525
CPCH01M4/131H01M4/362H01M4/485H01M10/0525Y02E60/10
Inventor 俞兆喆魏久兴徐华蕊杨道国蔡苗朱归胜颜东亮
Owner 桂林麦克斯新能源科技有限公司
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