Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Surface passivated CdTe nanocrystalline film and surface passivation treatment method and application thereof

A technology of passivation treatment and nanocrystals, which is applied in the direction of photovoltaic power generation, electrical components, and electrical solid devices, can solve problems such as instability, and achieve the effects of reduced recombination speed, low cost, and high repeatability

Inactive Publication Date: 2019-08-06
SOUTH CHINA UNIV OF TECH
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most organic hole transport materials are not stable, and the acidic solution (HNO3, Br2) involved in the etching process is extremely volatile and not environmentally friendly.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Surface passivated CdTe nanocrystalline film and surface passivation treatment method and application thereof
  • Surface passivated CdTe nanocrystalline film and surface passivation treatment method and application thereof
  • Surface passivated CdTe nanocrystalline film and surface passivation treatment method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] (1) CdTe nanocrystals (S.Sun, H.M.Liu, Y.P.Gao, D.H.Qin, J.Materials.Chemistry., 2012,517,6853-6856.) were prepared by solvothermal method, and then dissolved in an organic solvent (pyridine and n-propanol mixed solution) to obtain a black solution, that is, a nanocrystal solution, and deposit the nanocrystal solution on the window layer (consisting of successively stacked ITO glass substrates, ZnO layers, and CdSe layers) by spin coating, wherein the ITO / In the ZnO / CdSe device, the thickness of the ITO glass substrate is 150nm, the thickness of the ZnO layer is 40nm, and the thickness of the CdSe layer is 60nm), and then immersed in a saturated cadmium chloride methanol solution, and treated at a high temperature of 380°C to obtain nanocrystals Single-layer, and then solution processing by layer-by-layer stacking can effectively reduce interface defects and internal stress, uniform and dense photoactive layer (CdTe nanocrystalline film), CdTe nanocrystalline film prepa...

Embodiment 2

[0048] (1) CdTe nanocrystals (S.Sun, H.M.Liu, Y.P.Gao, D.H.Qin, J.Materials.Chemistry., 2012,517,6853-6856.) were prepared by solvothermal method, and then dissolved in an organic solvent (pyridine and n-propanol) to obtain a black solution, that is, a nanocrystal solution, and deposit the nanocrystal solution on the window layer (consisting of sequentially stacked ITO glass substrates, ZnO layers, and CdSe layers) by spin coating, wherein the ITO / ZnO / CdSe device, the thickness of the ITO glass substrate is 150nm, the thickness of the ZnO layer is 40nm, the thickness of the CdSe layer is 60nm), and then immersed in saturated CdCl 2 Methanol solution treatment, high temperature treatment at 380°C to obtain nanocrystalline single layer, and then layer by layer solution processing to obtain a uniform and dense photoactive layer (CdTe nanocrystalline thin film), which can effectively reduce interface defects and internal stress, CdTe nanocrystalline film preparation can refer to ...

Embodiment 3

[0054] (1) CdTe nanocrystals (S.Sun, H.M.Liu, Y.P.Gao, D.H.Qin, J.Materials.Chemistry., 2012,517,6853-6856.) were prepared by solvothermal method, and then dissolved in an organic solvent (pyridine and n-propanol) to obtain a black solution, that is, a nanocrystal solution, and deposit the nanocrystal solution on the window layer (consisting of sequentially stacked ITO glass substrates, ZnO layers, and CdSe layers) by spin coating, wherein the ITO / ZnO / CdSe device, the thickness of the ITO glass substrate is 150nm, the thickness of the ZnO layer is 40nm, and the thickness of the CdSe layer is 60nm), and then immersed in a saturated methanol solution of cadmium chloride, and treated at a high temperature of 380 ° C to obtain Nanocrystalline monolayer, and then layer-by-layer solution processing can effectively reduce interface defects and internal stress, uniform and dense CdTe nanocrystalline film, CdTe nanocrystalline film preparation can refer to the literature (Miaozi L, Xin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Concentrationaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a surface passivated CdTe nanocrystalline film and a surface passivation treatment method and an application thereof. The method comprises the steps of depositing a chelating agent solution and coating a CdCl2 solution on the CdTe nanocrystalline film, and then carrying out heat treatment to obtain the surface passivated CdTe nanocrystalline film. According to the treatmentmethod provided by the invention, metal ions are encapsulated inside a chelating agent through the strong binding of chelating agent molecules and metal ions; and then carrier recombination centers such as defect vacancies of the nanocrystalline film will be passivated during the CdTe recrystallization process through heat treatment, thereby achieving the purposes of passivating the activity of the CdTe nanocrystalline film, reducing the recombination speed of carriers and enhancing the short-circuit current of devices. The surface passivated CdTe nanocrystalline film provided by the invention can be applied to assembling CdTe nanocrystalline solar cells with an inverted structure.

Description

technical field [0001] The invention belongs to the field of photoelectric devices, and in particular relates to a surface passivation-treated CdTe nanocrystalline thin film and a surface passivation treatment method and application thereof. Background technique [0002] The solution-processed CdTe nanocrystalline solar cell is a relatively successful thin-film technology in the field of photovoltaics. It has attracted people's attention because of its low cost, high reliability, and large-area production. CdTe is a direct bandgap semiconductor with a bandgap of 1.45eV and a large light absorption coefficient (1×10 5 / cm). The theoretical efficiency of CdTe thin-film solar cells is as high as 29%. The current highest efficiency of CdTe nanocrystalline solar cells processed by solution method is only 12.3%, and there is still a lot of room for improvement. [0003] Nanocrystalline materials exhibit excellent photovoltaic properties due to their unique physical properties an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/135H10K71/12H10K30/00Y02E10/549
Inventor 覃东欢郭秀珍陈丙昌容志滔
Owner SOUTH CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com