A kind of snse crystal with high carrier concentration and its growth method and application
A growth method and high-carrier technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of limiting the application of SnSe materials, narrow temperature window of high ZT value, and no significant advantages in electrical properties, etc., to achieve Excellent electrical properties, short crystal growth cycle, and the effect of improving electrical properties
Active Publication Date: 2021-03-19
NANJING UNIV
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Problems solved by technology
However, the electrical properties of SnSe have no significant advantages in thermoelectric materials, and the carrier concentration in the low temperature phase is generally 10 17 / cm 3 , the electrical performance will be significantly improved after the high-temperature phase transition, and then the power coefficient will be increased, which leads to a narrow temperature window for the high ZT value of SnSe, mainly concentrated between 850K and 950K, while the ZT value of the low-temperature phase is all at 0.5 The following, which greatly limits the practical application of SnSe materials
Method used
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Embodiment 1
[0052] Weigh 0.1mol of Sn powder (11.8923g) and 0.1mol of Se powder (7.8420g), thoroughly grind and mix them in a mortar, and then put them into a quartz tube A (100 mm in length and 1 in diameter in diameter) after cleaning and drying in advance. 15mm), in the state of vacuuming by mechanical pump, seal the quartz tube with an acetylene flame, raise the temperature to 900°C at a heating rate of 50°C / h, perform a high-temperature solid-state reaction at 900°C for 5 hours, and then cool it naturally to room temperature. Prepare SnSe powder as a growth material.
[0053] Then weigh 1g of SnSe powder (1.0596g) and 20g of NaCl powder (20.0032g), grind and mix them evenly in a mortar, and then load the prepared Al 2 o 3 Crucible (diameter is 20mm, height is 80mm), and then the crucible is put into the quartz tube B (length is 160mm, diameter is 25mm) prepared in advance. Quartz tube B is vacuumed by mechanical pump and molecular pump, sealed with acetylene flame, placed in crysta...
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Abstract
The invention discloses a SnSe crystal with high carrier concentration, its preparation method and application. The SnSe crystal is grown by a flux method, the equipment is simple, the cost is low, and the crystal growth period is short, which is conducive to industrial production. The inventors have found that using NaCl as a flux to grow the SnSe crystal greatly improves the performance of the SnSe crystal material. electrical properties. The present invention only needs to use pure SnSe powder raw materials (Sn and Se are proportioned according to the stoichiometric ratio), without deliberately doping other elements or non-stoichiometric proportioning, and the obtained crystal can be self-doped with a certain amount of SnSe 2 , and the carrier concentration is 10 in the range of 2K ~ 300K 19 / cm 3 It has excellent electrical properties of SnSe materials and can effectively widen the high ZT value window of SnSe materials, which is of great significance in thermoelectric applications.
Description
technical field [0001] The invention belongs to the technical field of thermoelectric materials and crystal growth, and in particular relates to a SnSe crystal with high carrier concentration and its growth method and application. Background technique [0002] A thermoelectric material is a material that can directly convert heat and electricity into each other, and the energy conversion efficiency is generally characterized by a dimensionless ZT value, expressed as: [0003] [0004] where S represents the seebeck coefficient, σ represents the conductivity, and κ l denotes the lattice thermal conductivity, κ e denotes electronic thermal conductivity, and T denotes thermodynamic temperature. In recent years, improving the ZT value of thermoelectric materials has become a research hotspot in the field of thermoelectricity, and it is also a difficult point, because S, σ, κ (κ l +κ e ) There are internal mutual constraints among the three physical quantities, for example...
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IPC IPC(8): C30B9/12C30B29/46H01L35/16H10N10/852
CPCC30B9/12C30B29/46H10N10/852
Inventor 姚淑华张航飞吕洋洋曹琳陈延彬陈延峰
Owner NANJING UNIV