Broad-band high-performance photodetector based on palladium selenide thin film/silicon cone wrapping structure heterojunction and its manufacturing method

A photodetector and wide-band technology, applied in circuits, electrical components, nano-optics, etc., can solve the problems of limiting graphene applications, high electron mobility, high preparation costs, etc., to achieve broadened photoelectric performance, large light absorption area, The effect of stable performance
CN110190150BActive Publication Date: 2021-11-30HEFEI UNIV OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
HEFEI UNIV OF TECH
Publication Date
2021-11-30

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Abstract

The invention discloses a wide-band high-performance photodetector based on a palladium selenide thin film / silicon cone wrapped structure heterojunction and a preparation method thereof. The silicon cone is firstly etched on an n-type lightly doped silicon wafer with a silicon oxide layer. structure, and then wrap PdSe outside the silicon cone structure 2 film, so that the two form a heterojunction. The photoelectric detector of the invention has simple device preparation process, stable and good performance, and opens up new prospects for the application of transition group metal selenide materials in photoelectric detectors.
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Description

technical field

[0001] The invention belongs to the field of semiconductor photodetectors, and in particular relates to a wide-band high-performance photodetector based on a palladium selenide film / silicon cone wrapping structure heterojunction and a manufacturing method thereof. Background technique

[0002] Photodetectors are widely used in optical communication, imaging, and biosensing because they can convert optical signals into electrical output signals. In recent years, with the emergence of graphene, a widespread research boom has been set off, and it has been used in photodetectors because of its high electron mobility, but its no band gap, low absorbance and high preparation cost limit further applications of graphene. Then appeared black scale, also known as phosphorene, which has a narrow band gap and relatively high electron mobility, and has been used in the research of infrared devices, but phosphorene has a fatal flaw—poor stability. More and more researche...

Claims

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