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A deep groove semiconductor light detection structure and its manufacturing method

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of inconvenient low-voltage electrical signal processing, compatible integration, high reverse bias depletion voltage, etc., to reduce high-voltage power supply System requirements, good absorption of light energy, effects of increased selectability and accessibility

Active Publication Date: 2021-07-20
NO 24 RES INST OF CETC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Embodiments of the present invention provide a deep-groove semiconductor optical detection structure and its manufacturing method, which are used to at least solve the problem of high reverse bias depletion voltage required by traditional silicon optical long-wave detection, very thick extremely low-doped epitaxial layer or single crystal material , technical issues that are not convenient for compatible integration with low-voltage electrical signal processing

Method used

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  • A deep groove semiconductor light detection structure and its manufacturing method
  • A deep groove semiconductor light detection structure and its manufacturing method
  • A deep groove semiconductor light detection structure and its manufacturing method

Examples

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Embodiment 1

[0064] Example 1 is illustrated by taking the core structure of the laser detector in the wavelength range of 800nm-1060nm as an example:

[0065] 1. Referring to the thickness of the active layer (and also the thickness of the maximum depletion layer) of the traditional extremely low-doped planar 1060nm wavelength laser detector that is easy to manufacture and use, it is generally 30 μm-50 μm, and the deep groove to be processed is designed to be equivalent to this thickness. Taking it as 40 μm, considering that the aspect ratio of the existing deep grooves is limited by the process capability level, the width of the deep grooves is taken as 2 μm; the distance between adjacent deep grooves is 19 μm, and the width of the ohmic contact area 4 is 1 μm. In the middle; the doping concentration of the semiconductor material 1 is converted into a resistivity, which is taken as 6Ω cm, and an N-type substrate silicon wafer;

[0066] 2. Form a photolithography alignment mark on the ab...

Embodiment 2

[0076] Embodiment 2 still uses the core structure of the laser detector in the wavelength range of 800nm-1060nm as an example to illustrate:

[0077] 1. Referring to the thickness of the active layer (and also the thickness of the maximum depletion layer) of the traditional extremely low-doped planar 1060nm wavelength laser detector that is easy to manufacture and use, it is generally 30 μm-50 μm, and the deep groove to be processed is designed to be equivalent to this thickness. Taking it as 40 μm, considering that the aspect ratio of the existing deep grooves is limited by the process capability level, the width of the deep grooves is taken as 2 μm; the distance between adjacent deep grooves is 19 μm, and the width of the ohmic contact area 4 is 1 μm. In the middle; the doping concentration of the semiconductor material 1 is converted into a resistivity, which is taken as 6Ω cm, and an N-type substrate silicon wafer;

[0078] 2. Form a photolithography alignment mark on the...

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Abstract

The invention discloses a deep groove semiconductor photodetection structure and a manufacturing method thereof, wherein the deep groove semiconductor photodetection structure includes a semiconductor material, the semiconductor material is a first conductive impurity type, and the upper surface of the semiconductor material is Open an ohmic contact doped region and a plurality of deep grooves downwards, the ohmic contact doped region is a doped region with the first conductive impurity type, and the deep grooves diffuse to the groove wall to form a second conductive impurity type The deep trench diffusion region forms a PN junction in the semiconductor material, and the deep trench position forms a deep trench filling region with a second conductive impurity type, and the deep trench filling region and the deep trench diffusion region serve as photodetectors Electrode A, the ohmic contact doped region is used as photodetection electrode B, and the present invention can avoid the use of extremely low-doped high-resistance semiconductor materials that are more expensive and difficult to obtain, and greatly reduce the reverse bias voltage of photodetection and reduce the correlation Bias voltage circuit complexity and difficulty.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices and integrated circuits, and in particular relates to a deep groove semiconductor light detection structure and a manufacturing method thereof. Background technique [0002] With the development of Moore's Law (Moore's Law) in the scale of integrated circuits to nm scale, the development of the most important planar process for integrated circuits has gradually slowed down. At this time, the industry has proposed another technological development of integrated circuits that does not particularly rely on Moore's Law. One of them is that in addition to the planar graphic structure, the development of the device structure to three dimensions is also a development direction. In the process of developing integrated circuits and devices to the three-dimensional direction, there is a technical direction characterized by the development of modern deep groove technology. MEMS (micro-electrome...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/103H01L31/18
CPCH01L31/035281H01L31/103H01L31/1804Y02P70/50
Inventor 谭开洲崔伟张霞张静陈仙唐昭焕吴雪张培健
Owner NO 24 RES INST OF CETC