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Silicon carbide seed crystal support

A technology of silicon carbide single crystal and silicon carbide, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of easy back sublimation of seed crystal, difference in thermal expansion coefficient, etc., improve quality and yield, and avoid cracking , Improve crystal yield and quality effect

Inactive Publication Date: 2019-10-08
安徽微芯长江半导体材料有限公司
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  • Description
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  • Application Information

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Problems solved by technology

[0004] In view of the thermal expansion coefficient difference caused by the graphite seed crystal support commonly used in the current PVT process of growing SiC crystals and the problem that the seed crystal is easy to sublimate, the purpose of the present invention is to design a silicon carbide polycrystalline seed crystal support to eliminate SiC crystals and A method to avoid thermal expansion difference between conventional graphite seed holders and avoid sublimation on the back of the seed

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  • Silicon carbide seed crystal support
  • Silicon carbide seed crystal support

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Embodiment 1

[0025] choose as figure 1 In the silicon carbide crystal growth device shown, the silicon carbide polycrystalline seed support includes a silicon carbide polycrystalline substrate (2 mm in thickness) and a protective layer (made of graphite glue with a thickness of 100 μm). Then PVT method is used to grow silicon carbide crystals, and the upper and lower parts of the crucible are respectively filled with seed crystals and high-purity raw materials. First, the vacuum degree in the growth furnace is evacuated to 3.0×10 -4 After Pa, fill it with argon gas to a pressure of 400 Torr, start to heat up, cool down to 2100°C after 4 hours, grow stably at 11 Torr for 100 hours, and finally take out the crystal after slowly cooling down to room temperature. figure 2 SiC crystal ingots (3 inches in diameter) with very bright surfaces and no visible defects were prepared.

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Abstract

The invention relates to a silicon carbide seed crystal support which comprises a silicon carbide substrate and a protection layer, wherein the protection layer is arranged on the surface of the silicon carbide substrate; and the silicon carbide substrate is a silicon carbide polycrystal substrate, a silicon carbide ceramic substrate or a silicon carbide monocrystal substrate.

Description

technical field [0001] The invention relates to a seed crystal holder, in particular to a silicon carbide seed crystal holder used for growing silicon carbide crystals by a physical vapor transport method (PVT method), and belongs to the technical field of crystal growth. Background technique [0002] Silicon carbide (SiC) single crystal material has the advantages of wide band gap, high breakdown electric field strength, high saturation electron mobility, large thermal conductivity, small dielectric constant, strong radiation resistance, etc., and can be widely used in new energy vehicles, rail Transportation, smart grid, semiconductor lighting, new generation mobile communication, consumer electronics and other fields are regarded as the core technologies supporting the development of energy, transportation, information, national defense and other industries. , one of the key research directions of the semiconductor industry in Europe and Japan. At present, commercial SiC...

Claims

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Application Information

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IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/00C30B29/36
Inventor 高攀忻隽施尔畏
Owner 安徽微芯长江半导体材料有限公司