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Semiconductor laser and laser resonant cavity and optical confinement structure thereof

A laser resonator and confinement structure technology, applied in the field of lasers, can solve problems such as adverse device performance and impact, and achieve the effect of improving yield

Inactive Publication Date: 2019-10-11
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The occurrence of these defects will have an adverse effect on device performance.

Method used

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  • Semiconductor laser and laser resonant cavity and optical confinement structure thereof
  • Semiconductor laser and laser resonant cavity and optical confinement structure thereof
  • Semiconductor laser and laser resonant cavity and optical confinement structure thereof

Examples

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Embodiment 1

[0025] Such as figure 1 As shown, this embodiment provides an optical confinement structure 1 for forming a laser resonator. The optical confinement structure 1 of this embodiment includes a waveguide layer 12 and a cladding layer 11 disposed on the surface of the waveguide layer 12 . The refractive index of the cladding layer 11 is smaller than that of the waveguide layer 12 . The cladding layer 11 is used to reflect light entering the cladding layer 11 from the waveguide layer 12 .

[0026] Specifically, in this embodiment, the cladding layer 11 is aluminum indium gallium nitride (Al x In y Ga 1-x-y N) Quaternary alloys. Aluminum Indium Gallium Nitride (AlInGaN x In y Ga 1-x-y The bandgap and forbidden band width of N) are jointly determined by the components of aluminum and gallium, and the lattice parameter and forbidden band width (refractive index) of the cladding layer 11 can be adjusted simultaneously. In this way, while reducing the refractive index of the cl...

Embodiment 2

[0033] This embodiment provides a laser resonant cavity. Such as figure 2 As shown, the laser resonator includes a first optical confinement structure 1a and a second optical confinement structure 1b. It should be noted that both the first optical confinement structure 1 a and the second optical confinement structure 1 b are the optical confinement structures 1 provided in Embodiment 1. Wherein, the waveguide layer 12 of the first optical confinement structure 1 a and the waveguide layer 12 of the second optical confinement structure 1 b are arranged facing each other.

[0034] Specifically, the absolute value of the refractive index difference between the waveguide layer 12 and the cladding layer 11 of the first optical confinement structure 1a is larger than that between the waveguide layer 12 and the cladding layer 11 of the second optical confinement structure 1b. The absolute value of the refractive index difference between the cladding layers 11 . It should be noted ...

Embodiment 3

[0037] This embodiment provides a semiconductor laser. Such as image 3 as shown, image 3 A laser unit of the laser in this embodiment is shown, and the laser unit includes the substrate 3 and the laser cavity provided in the second embodiment. The cladding layer 11 of the first optical confinement structure 1 a of the laser resonator is disposed on the substrate 3 . A quantum well active layer 2 is provided between the waveguide layer 12 of the first optical confinement structure 1a and the waveguide layer 12 of the second optical confinement structure 1b.

[0038] Specifically, combined with figure 2 As is known, the quantum well active layer 2 includes a stacked quantum well single layer 21 and a quantum well barrier single layer 22, wherein the quantum well single layer 21 faces the first optical confinement structure 1a, and the quantum well The single well barrier layer 22 faces the second optical confinement structure 1b.

[0039] Preferably, an N-type GaN layer ...

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Abstract

The invention discloses a semiconductor laser and a laser resonant cavity and an optical confinement structure thereof. The optical confinement structure comprises a waveguide layer and a coating layer arranged on the surface of the waveguide layer, wherein the refractive index of the coating layer is smaller than that of the waveguide layer; and the coating layer is used for reflecting the lightrays emitted into the coating layer from the waveguide layer, and the coating layer is an aluminum-indium-gallium-nitrogen quaternary alloy. The laser resonant cavity comprises the two optical confinement structures, and the waveguide layers of the two optical confinement structures face each other, so that optical confinement along the growth direction of the laser is realized. The semiconductorlaser comprises a substrate and the laser resonant cavity. According to the invention, the problem that in the prior art, the optical confinement layer structure is difficult to have relatively high optical limiting effect while to keep a stable structure is solved.

Description

technical field [0001] The invention relates to the field of lasers, in particular to a semiconductor laser and its laser resonant cavity and optical confinement structure. Background technique [0002] As the operating wavelength of the laser increases, the light confinement effect of the optical confinement structure formed by using 1-10% aluminum component AlGaN and 0-6% In component will decrease. The reason is that the refractive index of the cladding layer composed of AlGaN and the waveguide layer composed of InGaN will decrease with the increase of wavelength, but relatively speaking, the refractive index of the waveguide layer will decrease more, which leads to the limitation The refractive index difference between the layer and the waveguide layer is reduced, resulting in less confinement of the optical field. In order to solve the above problems, one of the existing schemes is to greatly increase the thickness of the two materials, and the other scheme is to incre...

Claims

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Application Information

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IPC IPC(8): H01S5/20H01S5/10
CPCH01S5/10H01S5/2018
Inventor 刘建平江灵荣田爱琴杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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