Surface modification method and device for third-generation semiconductor material in oxygen-enriched environment

Abstract

The invention belongs to the technical field of laser manufacturing, and discloses a surface modification method and device for a third-generation semiconductor material in an oxygen-enriched environment. The oxygen-enriched atmosphere is formed around a to-be-processed material by utilizing an oxygen-enriched environment building device, an oxygen-enriched container is fixed on a working table ofthe a laser processing device, the to-be-processed semiconductor material is placed from the opening of the container, the container is closed, a fourth pipeline is started to discharge air to zero below 0.1 Mpa in the container by using a vacuum pump, the oxygen and air are correspondingly input, the gas with the oxygen concentration of 21%-99% is obtained in a mixing chamber, the oxygen-enriched gas is output through a third pipeline, and the oxygen-enriched environment of the container is constructed when the vacuum meter is 0.03 MPa; and the working table of the laser processing device isadjusted so that the laser beam can enter the container from the opening through a quartz glass, then is focused on the upper surface of the semiconductor material, finally, the processing pattern and the processing parameters are set, the processing program is operated, so that the surface modification of the semiconductor material is realized.

Description

technical field [0001] The invention belongs to the technical field of laser manufacturing, and more specifically relates to a method and device for surface modification of third-generation semiconductor materials in an oxygen-enriched environment. Background technique [0002] Semiconductor materials include the first, second, and third-generation semiconductor materials, and the application prospects of the third-generation semiconductor materials are huge. Among them, the third-generation semiconductor materials are represented by SiC, which has wide band gap, high critical breakdown battery, high thermal conductivity, The characteristics of high carrier saturation migration velocity, low relative permittivity, high temperature resistance and radiation resistance have great application potential in the IC field. The quality and precision of the surface processing directly affect the quality of the epitaxial film and its device performance. The SiC single crystal substrat...

AI Technical Summary

Problems solved by technology

Using the control of oxygen atmosphere to adjust and improve the chemical reactivity in the laser processing process, and to control the change of the surface properties of the wafer in a directional manner, not only solves the difficulty of fine processing and extremely low efficiency of the third-generation semiconductor materials due to chemical inertness, hard and brittle characteristics, but also Difficulty in accomplishing directional surface modification

Moreover, it also solves the problem that the third-generation semiconductor single crystal dicing sheet cannot be directly applied because of surface scratches and defects, and the follow-up surface precision processing technology is complicated.

Solve the problem of laser-induced surface modification of third-generation semiconductor material wafers, the modified surface exhibits multi-layer properties, but the structure is well controllable and the composition content is poorly controllable

Images